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surface nucleation and independent growth of Ce（OH）4 within confinement space on modified carbon black surface to prepare nano-CeO2 without agglomeration

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Frontiers of Materials Science 2018年第2期12卷 168-175页

作者： Xinyue ZHANG Chunhui XIA Kaitao LI Yanjun LIN State Key Laboratory of Chemical Resource Engineering Beijing University of Chemical Technology Beijing 100029 China

Highly dispersed negative carboxyl groups can be formed on carbon black （CB） surface modified with strong nitric acid. Therefore positive cations can be uniformly absorbed by carboxyl groups and precipitated within a confinement space on modified CB surface to prepare highly dispersed nanomaterials. In this paper, the formation and dispersion status of surface negative carboxyl groups, adsorption status of Ce^3＋, surface confinement nucleation, crystallization and calcination process were studied by EDS, SEM, and laser particle size analysis. The results show that the carboxyl groups formed on modified CB surface are highly dispersed, and Ce^3＋ cations can be uniformly anchored by carboxyl groups. Therefore, highly dispersed Ce^3＋ can react with OH^- within a confinement surface region to form positive nano-Ce（OH）4 nuclei which also can be adsorbed by electrostatic attraction. After independent growth of Ce（OH）4 without agglomeration, highly dispersed CeO2 nanoparticles without agglomeration can be prepared together with the help of effectively isolates by CO2 released in the combustion of CB.

关键词： surface nucleation confinement space modified CB agglomeration nano-CeO2

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Strain rate and size effect on dislocation plasticity in single crystalline pillar

Strain rate and size effect on dislocation plasticity in sin...

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2018年全国固体力学学术会议

作者： Jianqiao Hu Zhuo Zhuang Xiaoming Liu Zhanli Liu State Key Laboratory of Nonlinear Mechanics Institute of Mechanics Chinese Academy of Sciences Applied Mechanics Lab. School of Aerospace Engineering Tsinghua University

Dislocation plays an important role in the plastic deformation of crystalline materials. The deformation mechanism varies with strain rate, sample size and internal defects. In this work, discrete dislocation dynamics(DDD) are performed to clarify the dislocation controlled plasticity in single crystalline copper pillars with diameter ranging from 100 to 800 nm. It is founded that there is a transition from dislocation multiplication to surface nucleation when strain rate increases or sample size decreases. Two analytical models are established based on the surface nucleation mechanism and the single arm source dominated plasticity, respectively. The critical resolved shear stress at different sizes evaluated by the analytical models matches well with the experiment results. The critical size when the dominated dislocation mechanism transforms is predicted to be ～140 nm.

关键词： surface nucleation strain rate submicron pillars discrete dislocation dynamic critical size

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