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Origins of Ultrafast Pulse Laser-Induced Nano Straight Lines with Potential Applications in Detecting Subsurface Defects in Silicon Carbide Wafers

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Nanomanufacturing and Metrology 2022年第2期5卷 167-178页

作者： Tan Shu Feng Liu Shuai Chen Xingtao Liu Chen Zhang Gary J.Cheng The Institute of Technological Sciences Wuhan UniversityWuhan430072People’s Republic of China School of Power and Mechanical Engineering Wuhan UniversityWuhan430072People’s Republic of China School of Industrial Engineering Purdue UniversityWest LafayetteIN47906USA

The inspection of silicon carbide(SiC)wafer quality has attracted considerable attention because internal microstructure defects are challenging to detect in production *** and destructive methods are usually employed to detect dislocations and stacking faults inside SiC *** optical methods to monitor internal defects are in *** this work,an ultrafast pulse laser was used to address this *** formation of surface nanostructures under the ultrafast laser processing of SiC wafers was explored *** study discovered the origins of a typical surface nanostructure to the subsurface dislocation structure,called low-energy laser-induced nano straight lines(LLINSs),which forms under low-energy ultrafast pulse laser irradiation on a SiC *** specific laser fluence ranges to form grooves,laser-induced periodic surface structures,LLINSs,and their hybrids were *** formation of LLINSs required an ultrafast laser(pulse width 280 fs)energy density less than 0.224 J/mm2,whereas that of pure LLINSs required a small range of 0.1–0.08 J/mm2 for *** and their surrounding microstructures were observed using scanning transmission electron microscopy to identify their origin,which is related to the subsurface dislocation *** dynamics analysis revealed that the subsurface defect area has a high energy level,which can facilitate amorphous transformation under the irradiation of an ultrafast laser,and the amorphous area had a tendency to evolve into ***,subsurface lattice defects can be detected *** work opens new ways to detect the subsurface quality of semiconductor wafers in a green and sustainable manner.

关键词： Ultrafast laser processing surface nanostructure SiC wafer Dislocation Molecular dynamics

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