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Effective Increase of Crystal Area during sublimation Growth of 6H-SiC by Using the Cone-shaped Baffle

Journal of Materials Science & Technology 2007年第5期23卷 685-688页

作者： Shouzhen JIANG Xiangang XU Xiaobo HU Juan LI Xiufang CHEN Minhua JIANG State Key Laboratory of Crystal Materials Shandong University Jinan 250100 China College of Physics and Electronics Shandong Normal University Jinan 250014 China

A novel design of crucible is proposed in this paper for the growth of SiC crystals. The relation between grown crystal shape and temperature distribution in a growth chamber was discussed. It is pointed out that the crystal shape had a close relationship with temperature distribution. The calculations suggested that the radial temperature field of the growing crystal became homogenous by setting up the cone-shaped baffle in the growth chamber. By modifying the crucible design and temperature distribution in the growth chamber, it is possible to enhance the enlargement of crystal, and also possible to keep grown surface flat.

关键词： 6H-SIC sublimation method Simulation Temperature distribution

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Characterization of foreign grain on 6H-SiC facet

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Journal of Central South University 2009年第3期16卷 344-348页

作者：王英民李娟宁丽娜高玉强胡小波徐现刚 State Key Laboratory of Crystal Materials Shandong University

6H-SiC single crystals were grown by sublimation method. It is found that foreign grains occur frequently on the facets of the crystals. To characterize the foreign grain, a longitudinal and a sectional cut samples were prepared by standard mechanical processing method. Raman spectrum confirms that the foreign grain is actually a mis-oriented 6H-SiC grain. The surface structure of the foreign grain was studied by chemical etching and optical microscopy. It is shown that etch pits in foreign grain region take the shape of isosceles triangle, which are different from those in mono-crystalline region, and high density stacking faults are observed on the surface of the foreign grain. The orientation of foreign grain surface is determined to be （10]-4） plane by back-scattering X-ray Laue image. The X-ray powder diffraction reveals that the powder is partly graphitized after a long crystal growth rim. Therefore it is believed that the loss of Si results in the formation of C inclusions, which is responsible for the nucleation of foreign grain in the facet region.

关键词： 6H-SiC surface morphology foreign grain sublimation method

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