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Semi-quantitative study on the staebler-wronski effect of hydrogenated amorphous silicon films prepared with HW-ECR-CVD system

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Chinese Physics B 2006年第4期15卷 813-817页

作者：丁毅刘国汉陈光华贺德衍朱秀红张文理田凌马占杰 School of Physical Science and Technology Lanzhou University Lanzhou 730000 China The Key Laboratory of Advanced Functional Materials Ministry of Education of China Beijing University of Technology Beijing 100022 China

The method of numerical simulation is used to fit the relationship between the photoconductivity in films and the illumination time. The generation and process rule of kinds of different charged defect states during illumination are revealed. It is found surprisingly that the initial photoconductivity determines directly the total account of photoconductivity degradation of sample.

关键词： hydrogenated amorphous silicon staebler-wronski effect microwave electron cyclotronresonant chemical vapour deposition charged defects

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Numerical simulation of the effect of the free carrier motilities on light-soaked a-Si:H p–i–n solar cell

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Journal of Semiconductors 2015年第7期36卷 59-68页

作者： L.Ayat A.F.Bouhdjar AF.Meftah N.Sengouga Laboratory of Semiconductor Devices Physics Physics DepartmentUniversity of Béchar Faculté des Sciences de la matière Laboratoire des Matériaux Semi-conducteurs et MétalliquesUniversité Mohammed Khider

Using a previous model, which was developed to describe the light-induced creation ofthe defect density in the a-Si：H gap states, we present in this work a computer simulation of the a-Si：H p-i-n solar cell behavior under continuous illumination. We have considered the simple case of a monochromatic light beam nonuniformly absorbed. As a consequence of this light-absorption profile, the increase of the dangling bond density is assumed to be inhomogeneous over the intrinsic layer （i-layer）. We investigate the internal variable profiles during illumination to understand in more detail the changes resulting from the light-induced degradation effect. Changes in the cell external parameters including the open circuit voltage, Voc, the short circuit current density, Jsc, the fill factor, FF, and the maximum power density, Pmax, are also presented. This shows, in addition, the free carrier mobility influence. The obtained results show that Voc seems to be the less affected parameter by the light-induced increase of the dangling bond density. Moreover, its degradation is very weak-sensitive to the free carrier mobility. Finally, the free hole mobility effect is found to be more important than that of electrons in the improvement of the solar cell performance.

关键词： a-Si:H staebler-wronski effect defect pool model p-i-n

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Light induced microstructure transformation in a-Si：H films

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Chinese Physics B 2007年第4期16卷 1125-1128页

作者：刘国汉丁毅张文理陈光华贺德衍邓金祥 School of Physical Science and Technology Lanzhou University Lanzhou 730000 China Institute of Sensor Technology Gansu Academy of Sciences Lanzhou 730000 China The Key Laboratory of Advanced Functional Materials Ministry of Education of China Beijing University of Technology Beijing 100022 China

A series of a-Si：H films are deposited by hot wire assisted microwave electron cyclotron resonant chemical vapour deposition （HW-MWECR-CVD）, subsequently exposed under simulated illumination for three hours. This paper studies the microstructure change during illumination by Fourier Transformation Infrared （FTIR） spectra. There are two typical transformation tendencies of microstructure after illumination. It proposes a model of light induced structural change based on the experimental results. It is found that all samples follow the same mechanism during illumination, and intrinsic structure of samples affect the total H content.

关键词： hydrogenated amorphous silicon staebler-wronski effect microwave electron cyclotron resonant chemical vapour deposition

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