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Mn_(3)Ag_((1-x))Cu_((x))N antiperovskite thin films with ultra-low temperature coefficient of resistance

Journal of Materials Science & Technology 2022年第4期99卷 138-147页

作者： Cecil Cherian Lukose Guillaume Zoppi Martin Birkett Faculty of Engineering and Environment Northumbria UniversityNewcastle upon Tyne NE18STUnited Kingdom

We demonstrate the first successful attempt to partially substitute Cu into the Mn_(3)AgN-antiperovskite system to form Mn_(3)Ag_((1-x))Cu_((x))N thin films with an ultra-low temperature coefficient of resistance(TCR)for fabrication of ultra-precise passive *** were grown by reactive magnetron sputtering on alumina and glass substrates and were found to be amorphous in nature with highly negative TCR of-233 to-351 ppm/℃in their as-grown *** Cu alloying from x=0 to 1,resulted in increased sheet resistance,a negative shift of TCR and a change of grain morphology from spherical to ***-deposition heat treatment at 300-375℃,resulted in a positive shift of TCR and an ultra-low TCR of-4.66 ppm/℃for films with x=*** heat treatment induces grain growth,surface roughness and the formation of a manganese oxide upper surface layer up until temperatures of 350℃,after which surface oxidation begins to *** growth rate of the surface layer is controlled by the Cu concentration and heat treatment temperature,which both play a central role in the development of these novel ultralow TCR Mn_(3)Ag_((1-x))Cu_((x))N thin film structures.

关键词： Antiperovskite Thin film sputter deposition Annealing Surface oxidation Near-zero temperature coefficient of resistance

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PHASE TRANSFORMATION BEHAVIOR IN THE sputter DEPOSITED Ti-Pd-Ni THIN FILMS

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Acta Metallurgica Sinica(English Letters) 2001年第5期14卷 319-322页

作者： Q. C. Tian and J.S. Wu Key Laboratory of the Ministry of Education for High Temperature Materials and Tests, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200030, China Sch. of Materials Sci. and Eng. Shanghai Jiaotong Univ. Shanghai 200030 China

Ti-Pd-Ni thin films were prepared by sputter deposition at room temperature. The as-deposited thin films were crystallized at 750°C followed by various cooling conditions, and the structural change emerging in the films was characterized by means of both X-ray diffraction (XRD) and differential scanning calorimetry (DSC). It was found that the phase transformation temperatures of Ti50.6Pd30Ni19.4 ingot we much higher than those of its thin film. The B19' and B19 phases coexisted, together with the Ti2Ni type and Ti2Pd type of precipitates at the room temperature. Both the B19-B2 one-stage and the B19'-B19-B2 two-stage phase transformations took place when the films experienced thermal change across the region of phase transformation temperatures.

关键词： Nickel Palladium sputter deposition Thin films Titanium

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