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Mechanism of field-like torque in spin-orbit torque switching of perpendicular magnetic tunnel junction

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Science China(Physics,Mechanics & Astronomy) 2022年第10期65卷 109-114页

作者： Yudong Zhuo Wenlong Cai Daoqian Zhu Hongchao Zhang Ao Du Kaihua Cao Jialiang Yin Yan Huang Kewen Shi Weisheng Zhao Fert Beijing Institute MIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing 100191China Beihang-Goertek Joint Microelectronics Institute Qingdao Research InstituteBeihang UniversityQingdao 266000China

The current-induced spin-orbit torque(SOT) is one of the most promising ways for high speed and low power spintronics devices. However, the mechanism of SOT driven magnetization reversal, especially the role of the field-like torque(FLT), is still unclear. Here, we report the observed promotion and suppression of switching by FLT, which depends on the relative direction of FLT and spin polarization. Our results reveal that the FLT could modulate the switching speed and power consumption by affecting the work done by the damping-like torque, and leads two different reversal dynamical paths during the ***, the origin of incubation time in SOT induced switching is clarified simultaneously.

关键词： spin-orbit torque field-like torque magnetization reversal magnetic tunnel junction

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Influence of exchange bias on spin torque ferromagnetic resonance for quantification of spin–orbit torque efficiency

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Chinese Physics B 2024年第5期33卷 688-694页

作者：赵乾张腾飞何斌李子木张森富于国强王建波刘青芳魏晋武 Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education Lanzhou UniversityLanzhou 730000China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Key Laboratory of Special Functional Materials and Structural Design Ministry of EducationLanzhou UniversityLanzhou 730000China

Antiferromagnet(AFM)/ferromagnet(FM)heterostructure is a popular system for studying the spin–orbit torque(SOT)of ***,the interfacial exchange bias field induces that the magnetization in FM layer is noncollinear to the external magnetic field,namely the magnetic moment drag effect,which further influences the characteristic of SOT *** this work,we study the SOT efficiencies of IrMn/NiFe bilayers with strong interfacial exchange bias by using spin-torque ferromagnetic resonance(ST-FMR)method.A full analysis on the AFM/FM systems with exchange bias is performed,and the angular dependence of magnetization on external magnetic field is determined through the minimum rule of free *** ST-FMR results can be well fitted by this *** obtained the relative accurate SOT efficiencyξ_(DL)=0.058 for the IrMn *** work provides a useful method to analyze the angular dependence of ST-FMR results and facilitates the accurate measurement of SOT efficiency for the AFM/FM heterostructures with strong exchange bias.

关键词： antiferromagnets spin-orbit torque exchange bias spin torque ferromagnetic resonance

Magnetization reorientation induced by spin-orbit torque in YIG/Pt bilayers

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Chinese Physics B 2020年第11期29卷 497-502页

作者： Ying-Yi Tian Shuan-Hu Wang Gang Li Hao Li Shu-Qin Li Yang Zhao Xiao-Min Cui Jian-Yuan Wang Lv-Kuan Zou Ke-Xin Jin Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions School of ScienceNorthwestern Polytechnical UniversityXi’an 710072China High Magnetic Field Laboratory Chinese Academy of SciencesHefei 230031China School of Science and Technology Tianjin University of Finance and EconomicsTianjin 300222China

In this work,we report the reorientation of magnetization by spin-orbit torque(SOT)in YIG/Pt *** SOT is investigated by measuring the spin Hall magnetoresistance(SMR),which is highly sensitive to the direction of magnetic moment of *** external in-plane rotating magnetic field which is applied to the YIG/Pt bilayers,and the evolutions of SMR under different injected currents in the Pt layer,result in deviation of SMR curve from the standard *** conclude that the SOT caused by spin accumulation near the interface between YIG and Pt can effectively reorient the inplane magnetic moment of *** discovery provides an effective way to modulate YIG magnetic moments by electrical methods.

关键词： spin-orbit torque yttrium iron garnet reorientation of magnetization spin Hall magnetoresistance

XOR spin logic operated by unipolar current based on field-free spin-orbit torque switching induced by a lateral interface

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Rare Metals 2024年第8期43卷 3868-3875页

作者： Yan-Ru Li Mei-Yin Yang Guo-Qiang Yu Bao-Shan Cui Jin-Biao Liu Yong-Liang Li Qi-Ming Shao Jun Luo Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences(IMECAS)Beijing 100029China University of Chinese Academy of Sciences(UCAS) Beijing 100049China Songshan Lake Materials Laboratory Dongguan 523808China Institute of Physics Chinese Academy of SciencesBeijing 100190China Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education Lanzhou UniversityLanzhou 730000China Department of Electronic and Computer Engineering The Hong Kong University of Science and TechnologyHong Kong 999077China

spin logics have emerged as a promising avenue for the development of logic-in-memory *** particular,the realization of XOR spin logic gates using a single spin-orbit torque device shows great potential for low-power stateful logic circuits in the next *** this study,we successfully obtained the XOR logic gate by utilizing a spin-orbit torque device with a lateral interface,which was created by local ion implantation in the Ta/Pt/Co/Ta Hall device exhibiting perpendicular magnetic *** angle of the lateral interface is set at 45°relative to the current direction,leading to the competition between symmetry breaking and current-driven Néel-type domain wall ***,the field-free magnetic switching reversed is realized by the same sign of current amplitude at this *** on this field-free magnetic switching behavior,we successfully proposed an XOR logic gate that could be implemented using only a single spin-orbit torque Hall *** study provides a potentially viable approach toward efficient spin logics and in-memory computing architectures.

关键词： Filed-free magnetic switching spin-orbit torque XOR logic gate Lateral interface

Enhancement of spin-orbit torque efficiency by tailoring interfacial spin-orbit coupling in Pt-based magnetic multilayers

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Chinese Physics B 2022年第9期31卷 146-151页

作者： Wenqiang Wang Gengkuan Zhu Kaiyuan Zhou Xiang Zhan Zui Tao Qingwei Fu Like Liang Zishuang Li Lina Chen Chunjie Yan Haotian Li Tiejun Zhou Ronghua Liu National Laboratory of Solid State Microstructures School of Physics and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China New Energy Technology Engineering Laboratory of Jiangsu Provence and School of Science Nanjing University of Posts and TelecommunicationsNanjing 210023China Centre for Integrated spintronic Devices School of Electronics and InformationHangzhou Dianzi UniversityHangzhou 310018China

We study inserting Co layer thickness-dependent spin transport and spin-orbit torques(SOTs)in the Pt/Co/Py trilayers by spin-torque ferromagnetic *** interfacial perpendicular magnetic anisotropy(IPMA)energy density(Ks=2.7 erg/cm^(2),1 erg=10^(-7) J),which is dominated by interfacial spin-orbit coupling(ISOC)in the Pt/Co interface,total effective spin-mixing conductance(G↑↓eff,tot=0.42×10^(15) Ω^(-1)·m^(-2))and two-magnon scattering(βTMS=0.46 nm2)are first characterized,and the damping-like torque(ξDL=0.103)and field-like torque(ξFL=-0.017)efficiencies are also calculated quantitatively by varying the thickness of the inserting Co *** significant enhancement of ξDL and ξFL in Pt/Co/Py than Pt/Py bilayer system originates from the interfacial Rashba-Edelstein effect due to the strong ISOC between Co-3d and Pt-5d orbitals at the Pt/Co ***,we find a considerable out-of-plane spin polarization SOT,which is ascribed to the spin anomalous Hall effect and possible spin precession effect due to IPMA-induced perpendicular magnetization at the Pt/Co *** results demonstrate that the ISOC of the Pt/Co interface plays a vital role in spin transport and *** finds offer an alternative approach to improve the conventional SOTs efficiencies and generate unconventional SOTs with out-of-plane spin polarization to develop low power Pt-based spintronic via tailoring the Pt/FM interface.

关键词： spin-orbit torque interfacial Rashba-Edelstein effect spin-torque efficiency spin-torque ferromagnetic resonance

Wedge-shaped HfO_(2) buffer layer-induced field-free spin-orbit torque switching of HfO_(2)/Pt/Co structure

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Chinese Physics B 2024年第4期33卷 662-667页

作者：陈建辉梁梦凡宋衍袁俊杰张梦旸骆泳铭王宁宁 School of Electronics and Information Engineering Hangzhou Dianzi UniversityHangzhou 310018China Covestro lnvestment Co. LtdShanghai 200126China

Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic *** study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer *** field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 *** phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer *** thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching *** findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.

关键词： spin-orbit torque field-free switching HfO_(2) buffer layer

Enhanced spin–orbit torque efficiency in Pt100−xNix alloy based magnetic bilayer

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Chinese Physics B 2021年第3期30卷 100-104页

作者： Congli He Qingqiang Chen Shipeng Shen Jinwu Wei Hongjun Xu Yunchi Zhao Guoqiang Yu Shouguo Wang Institute of Advanced Materials Beijing Normal UniversityBeijing 100875China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China

The binary alloy/ferromagnetic metal heterostructure has drawn extensive attention in the research field of spin–orbittorque(SOT)due to the potential enhancement of SOT efficiency via composition *** this work,the magneticproperties and SOT efficiency in the Pt100−xNix/Ni78Fe22 bilayers were investigated via the spin-torque ferromagneticresonance(ST-FMR)*** effective magnetic anisotropy field and effective damping constant extracted by analyzing the ST-FMR spectra show a weak dependence on the Ni *** effective spin-mixing conductanceof 8.40×10^(14)Ω−1·m−2and the interfacial spin transparency Tin of 0.59 were obtained for the sample of Pt70Ni30/*** interestingly,the SOT efficiency that is carefully extracted from the angular dependence of ST-FMR spectrashows a nonmonotonic dependence on the Ni concentration,which reaches the maximum at x=*** enhancement ofthe SOT efficiency by alloying the Ni with Pt shows potential in lowering the critical switching ***,alloyingrelatively cheaper Ni with Pt may promote to reduce the cost of SOT devices.

关键词： spin-orbit torque magnetic doping spin-torque ferromagnetic resonance

Field-free approaches for deterministic spin–orbit torque switching of the perpendicular magnet

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Materials Futures 2022年第2期1卷 51-63页

作者： Hao Wu Jing Zhang Baoshan Cui Seyed Armin Razavi Xiaoyu Che Quanjun Pan Di Wu Guoqiang Yu Xiufeng Han Kang L Wang Songshan Lake Materials Laboratory DongguanGuangdong 523808People’s Republic of China Department of Electrical and Computer Engineering and Department of Physics and AstronomyUniversity of CaliforniaLos AngelesCA 90095United States of America Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190People’s Republic of China

All-electrical driven magnetization switching attracts much attention in next-generation spintronic memory and logic devices,particularly in magnetic random-access memory(MRAM)based on the spin–orbit torque(SOT),***-MRAM,due to its advantages of low power consumption,fast write/read speed,and improved endurance,*** conventional SOT-driven switching of the magnet with perpendicular magnetic anisotropy,an external assisted magnetic field is necessary to break the inversion symmetry of the magnet,which not only induces the additional power consumption but also makes the circuit more *** the last decade,significant effort has been devoted to field-free magnetization manipulation by using *** this review,we introduce the basic concepts of *** that,we mainly focus on several approaches to realize the field-free deterministic SOT switching of the perpendicular *** mechanisms mainly include mirror symmetry breaking,chiral symmetry breaking,exchange bias,and interlayer exchange ***,we show the recent progress in the study of SOT with unconventional origin and *** final section is devoted to the industrial-level approach for potential applications of field-free SOT switching in SOT-MRAM technology.

关键词： spin-orbit torque perpendicular magnetic anisotropy field-free switching symmetry breaking magnetic memory

Stochastic spin-orbit-torque device as the STDP synapse for spiking neural networks

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Science China(Physics,Mechanics & Astronomy) 2023年第5期66卷 188-194页

作者： Haotian Li Liyuan Li Kaiyuan Zhou Chunjie Yan Zhenyu Gao Zishuang Li Ronghua Liu National Laboratory of Solid State Microstructures Jiangsu Provincial Key Laboratory for NanotechnologySchool of PhysicsNanjing UniversityNanjing 210093China

Neuromorphic hardware,as a non-Von Neumann architecture,has better energy efficiency and parallelism than the conventional ***,with the numerical modeling spin-orbit torque(SOT)device using current-induced SOT and Joule heating effects,we acquire its magnetization stochastic switching probability as a function of the interval time of input current pulses and use it to mimic the spike-timing-dependent plasticity learning behavior like actual brain *** further demonstrate that the artificial spiking neural network(SNN)built by this SOT device can perform unsupervised handwritten digit recognition with an accuracy of 80%and logic operation *** work provides a new clue to achieving SNN-based neuromorphic hardware using high-energy efficiency and nonvolatile spintronics nanodevices.

关键词： spin-orbit torque neuromorphic hardware spiking neural network stochastic magnetization reversal