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ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial cu foil

Science Bulletin 2017年第15期62卷 1074-1080页

作者： Xiaozhi Xu Zhihong Zhang Jichen Dong Ding Yi Jingjing Niu Muhong Wu Li Lin Rongkang Yin Mingqiang Li Jingyuan Zhou Shaoxin Wang Junliang Sun Xiaojie Duan Peng Gao Ying Jiang Xiaosong Wu Hailin Peng Rodney S. Ruoff Zhongfan Liu Dapeng Yu Enge Wang Feng Ding Kaihui Liu State Key Laboratory for Mesoscopic Physics School of Physics Peking University Beijing 100871 China Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 China Center for Multidimensional Carbon Materials (CMCM) Institute for Basic Science (IBS) UIsan 689-798 Republic of Korea Centre for Nanochemistry College of Chemistry and Molecular Engineering Peking University Beijing 100871 China Department of Biomedical Engineering College of Engineering Peking University Beijing 100871 China College of Chemistry and Molecular Engineering Peking University Beijing 100871 China Collaborative Innovation Centre of Quantum Matter Beijing 100871 China International Centre for Quantum Materials Peking University Beijing 100871 China Department of Chemistry Ulsan National Institute of Science and Technology (UNIST) Ulsan 689-798 Republic of Korea Department of Physics South University of Science and Technology of China Shenzhen 518055 China School of Materials Science and Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan 689-798 Republic of Korea

A foundation of the modern technology that uses single-crystal silicon has been the growth of highquality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality(ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20 min, of a graphene film of(5 ×50) cm^2 dimension with >99% ultra-highly oriented *** growth was achieved by:(1) synthesis of metre-sized single-crystal cu(1 1 1) foil as substrate;(2)epitaxial growth of graphene islands on the cu(1 1 1) surface;(3) seamless merging of such graphene islands into a graphene film with high single crystallinity and(4) the ultrafast growth of graphene *** achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal cu(1 1 1) from industrial polycrystalline cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains(if any), has a mobility up to ~23,000 cm^2 V^(-1)s^(-1)at 4 K and room temperature sheet resistance of ~230 Ω/□. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost.

关键词： single-crystal industrial cu graphene ultrafast epitaxial

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