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In-situ sin combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

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Chinese Physics B 2020年第4期29卷 430-433页

作者： Min-Han Mi Sheng Wu Ling Yang Yun-Long He Bin Hou Meng Zhang Li-Xin Guo Xiao-Hua Ma Yue Hao Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China School of Advanced Materials and Nanotechnology Xidian UniversityXi'an 710071China School of Physics and Optoelectronic Engineering Xidian UniversityXi'an 710071China

The etch-stop structure including the in-situ sin and AlGaN/GaN barrier is proposed for high frequency *** etch-stop process is realized by placing an in-situ sin layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing sin,leaving the AlGaN barrier in the gate *** this in-situ sin and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching *** device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.

关键词： AlGaN/GaN in-situ sin etch-stop barrier

sin自由基X^2Σ^+,A^2Π和B^2Σ^+电子态的光谱常数研究

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物理学报 2013年第1期62卷 139-145页

作者：王杰敏冯恒强孙金锋施德恒李文涛朱遵略洛阳师范学院物理与电子信息学院洛阳471022 河南师范大学物理与信息工程学院新乡453007

采用内收缩多参考组态相互作用(MRCI)方法,结合价态范围内的最大相关一致基aug-cc-pV6Z,计算了sin自由基X2Σ+,A2Π和B2Σ+电子态的势能曲线.采用Davidson修正来避免由于MRCI方法本身的大小一致性缺陷产生的误差.为了提高计算精度,进一... 详细信息

采用内收缩多参考组态相互作用(MRCI)方法,结合价态范围内的最大相关一致基aug-cc-pV6Z,计算了sin自由基X2Σ+,A2Π和B2Σ+电子态的势能曲线.采用Davidson修正来避免由于MRCI方法本身的大小一致性缺陷产生的误差.为了提高计算精度,进一步考虑了相对论修正和核价相关修正对势能曲线的影响.相对论修正是利用二阶Douglas-Kroll哈密顿近似在cc-pV5Z基组水平进行的;同时核价相关修正是在cc-pCV5Z基组水平进行的.对这些势能曲线进行拟合,得到各种水平下三个电子态的光谱常数(Te,Re,ωe,ωexe,αe和Be),并详细分析了Davidson修正、相对论修正和核价相关修正对光谱常数的影响.与其他理论结果和实验数据进行比较,可知本文的结果更精确、更完整.

关键词： sin 光谱常数相对论修正核价相关修正

Thermal analysis for fast thermal-response Si waveguide wrapped by sin

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Frontiers of Optoelectronics 2012年第1期5卷 73-77页

作者： Rui MIN Ruiqiang JI Lin YANG Optoelectronic System Laboratory Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

A new type of Si waveguide wrapped by silicon nitride （sin） is designed, and its optical and thermal analysis are presented. The thickness of sin up-cladding should be larger than 1 pm in order to prevent the absorption of optical field by metal heater. Thermal response of the proposed waveguide structure is enhanced by the high thermal conductivity of sin. Moreover, this thermal response can be further improved by a fast heat dissipation channel created in this structure. Our simula- tion results indicate that a rise time of about 110 ns can be achieved for the proposed waveguide structure, which is about two orders of magnitude less than that of the conventional Si waveguide. The influences of the thickness of up-cladding and the stretching width and etching depth on the thermal performance are also discussed. The simulation shows thin up-cladding, large stretching width and etching depth are critical to enhance the thermal response speed.

关键词： thermo-optic sin Si waveguide rise time

sin插入层对GaN外延膜应力和光学质量的影响(英文)

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发光学报 2013年第8期34卷 1017-1021页

作者：宋世巍梁红伟申人升柳阳张克雄夏晓川杜国同大连理工大学物理与光电工程学院辽宁大连116024 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室上海200050 吉林大学电子科学与工程学院吉林长春130012

研究了MOCVD系统中原位sin插入层对GaN薄膜应力和光学性质的影响。采用sin插入层后,GaN薄膜的裂纹数量大大减少,薄膜所承受的张应力得到了一定的释放。同时,GaN薄膜的缺陷密度降低一倍,晶体质量得到了极大的改善。研究表明,位错密度的... 详细信息

研究了MOCVD系统中原位sin插入层对GaN薄膜应力和光学性质的影响。采用sin插入层后,GaN薄膜的裂纹数量大大减少,薄膜所承受的张应力得到了一定的释放。同时,GaN薄膜的缺陷密度降低一倍,晶体质量得到了极大的改善。研究表明,位错密度的降低在GaN薄膜中留存较大的残余应力,补偿了降温过程中所引入的张应力。同样,随着sin插入层的应用,低温PL谱的半峰宽降低,薄膜光学质量提高。最后研究了PL谱发光峰与应力的关系,得到了一个-13.8的线性系数。

关键词： sin 应力弛豫插入层

GaN MMIC中sin介质MIM电容的可靠性

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物理学报 2012年第17期61卷 476-481页

作者：王鑫华王建辉庞磊陈晓娟袁婷婷罗卫军刘新宇中国科学院微电子研究所微电子器件与集成技术重点实验室北京100029

本文通过恒定应力加速实验对GaN微波单片集成电路中sin介质MIM电容的可靠性进行了评估,研究了高场下MIM电容的两种失效模式、临界介质击穿电荷密度以及平均失效前时间.通过不同温度下介质电容的导电特性求解了介质内的缺陷能级.重点分析... 详细信息

本文通过恒定应力加速实验对GaN微波单片集成电路中sin介质MIM电容的可靠性进行了评估,研究了高场下MIM电容的两种失效模式、临界介质击穿电荷密度以及平均失效前时间.通过不同温度下介质电容的导电特性求解了介质内的缺陷能级.重点分析了sin介质MIM电容的退化机理,研究认为高应力下介质内产生新的施主型缺陷,并占据主导地位,其缺陷能级逐渐向深能级转移;缺陷的持续增加加剧了介质内载流子的散射,导致应力后期泄漏电流降低.sin介质MIM电容退化机理的研究为加固介质电容提供了依据.

关键词： sin MIM电容缺陷平均失效前时间

sin钝化膜对Si衬底GaN基蓝光LED性能影响

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发光学报 2008年第5期29卷 840-844页

作者：邱冲刘军林郑畅达姜乐江风益南昌大学教育部发光材料与器件工程研究中心江西南昌330047 晶能光电江西有限公司江西南昌330096

利用等离子辅助化学气相沉积(PECVD)系统在垂直结构Si衬底GaN基蓝光LED芯片上生长了sin钝化膜,并对长有钝化膜及未作钝化处理的LED在不同条件下进行了老化实验,首次研究了sin钝化膜对垂直结构Si衬底GaN基蓝光LED可靠性的影响。实验发现... 详细信息

利用等离子辅助化学气相沉积(PECVD)系统在垂直结构Si衬底GaN基蓝光LED芯片上生长了sin钝化膜,并对长有钝化膜及未作钝化处理的LED在不同条件下进行了老化实验,首次研究了sin钝化膜对垂直结构Si衬底GaN基蓝光LED可靠性的影响。实验发现:经过30mA、85℃、24h条件老化后,未作钝化处理的Si衬底GaN基蓝光LED的平均光衰为11.41%,而长有sin钝化膜的LED平均光衰为6.06%,sin钝化膜有效地改善了LED在各种老化条件下的光衰,另外,sin钝化膜缓解了Si衬底GaN基蓝光LED老化过程中反向电压(Vr)的下降,但对老化后LED的抗静电击穿能力(ESD)没有明显的影响。

关键词：蓝光LED GaN 硅衬底 sin 钝化光衰

sin,Samsara and Self-Salvation:an Interpretation of the Film Triangle from the Perspective of Archetypal Criticism

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海外英语 2015年第17期 167-170页

作者：祝玉龙 College of Foreign Languages and Cultures Sichuan University

In the light of the knowledge that literature is the direct mimesis of other literary works and indirect mimesis of mythswhile film is the direct mimesis of other forms of arts and indirect mimesis of literary works,the present paper extends the feasibili-ty of Northrop Frye's archetypal theories into the interpretation of *** film Triangle(2007) is a fascinating and successfulthriller characterized by its legion psychological puzzles and enigmatic *** probing into this cliff-hanging film from theperspective of archetypal criticism,focusing on its displaced archetypal structure,motif and image,the paper exposes the"myth"of this film – a metaphorical and symbolical revelation of"sin""samsara"and"self-salvation",which in turn,proves that the fun-damental sameness of literature and filmable arts is the literariness derived from archetypal myths.

关键词： Archetypal Criticism Myth Triangle sin Samsara Sel

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sin分子外电场情况下的发光特性

物理学报 2012年第4期61卷 101-106页

作者：徐国亮谢会香袁伟张现周刘玉芳河南师范大学物理与信息工程学院新乡453007

为全面分析外电场对分子发光特性的影响,本文采用密度泛函B3P86方法6-31g(d)基组,对sin分子进行了基态结构的优化,进而使用含时密度泛函方法(time dependent density functional theory,TDDFT),计算了不同方向及大小的外电场情况下sin... 详细信息

为全面分析外电场对分子发光特性的影响,本文采用密度泛函B3P86方法6-31g(d)基组,对sin分子进行了基态结构的优化,进而使用含时密度泛函方法(time dependent density functional theory,TDDFT),计算了不同方向及大小的外电场情况下sin分子的吸收谱、激发能、振子强度、跃迁偶极矩.通过比较发现外电场对该分子的激发能、吸收谱、跃迁振子强度及跃迁偶极矩影响都比较明显,说明了电场对sin分子的激发特性影响比较复杂,特别是在加场前后分子均有在可见光区波段的吸收谱,这对研究分子的发光很有意义.同时对该分子所发可见光谱的产生机理进行了分析,并与已有实验结果进行比较.

关键词： sin 外电场激发特性

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International Journal of Clinical Medicine 2014年第13期5卷 799-810页

作者： Robert Bendavid Wendy Lou Andreas Koch Vladimir Iakovlev Day Surgery and Hernia Center Cottbus Germany Department of Biostatistics Dalla Lan School of Public Health University of Toronto Toronto Canada Department of Laboratory Medicine and Pathobiology Keenan Research Centre of the Li Ka Shing Knowledge Institute Division of Pathology St. Michael’s Hospital University of Toronto Toronto Canada Shouldice Hospital Thornhill Canada

Purpose: The ubiquitous use of synthetic materials in hernia surgery has brought about a new clinical syndrome: Surreptitious Irreversible Neuralgia (sin). It is surreptitious because it is of slow onset, unsuspected and enigmatic to clinicians;irreversible because the pain is progressive, unrelenting and unresponsive to treatment. Removal of the mesh does not guarantee pain relief. Neuralgia following mesh insertion, when it occurs, remains a poorly understood phenomenon. Methods: Ten specimens in each group: virgin tissue, scar tissue and explanted mesh from the posterior inguinal wall were examined histologically to assess nerve density, nerve size and nerve and vessel ingrowth into the deformed mesh and within its pores. Results: There was no significant difference in nerve density between virgin, scar and mesh samples. All of the explanted meshes had nerves within the scar tissue encasing the mesh (interstitial infiltration). Nerve ingrowth through the pores of the mesh (micro-entrapment) was detected in 90% of the explanted mesh specimens. Additionally, nerves were detected entrapped within the folds and deformations of mesh explants. Ingrown vessels showed congestion and focal fibrin thrombi. Conclusion: The presence of mesh does not significantly affect nerve density, while the nerves and their terminal ends are in a vulnerable position about the mesh and within its pores. These pores need to be viewed as “mini-compartments” of biological tissue where the vasculature, nerves and their receptors are exposed to potential mechanical and chemical factors: scarring, entrapment, compression, tugging, deformation, contraction, hypoxia/acidosis, inflammation and edema.

关键词： Polypropylene Mesh Mesh Pores Hernia Pain Nerves sin Syndrome