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Intermodal frequency generation in silicon-rich silicon nitride waveguides

Photonics Research 2019年第6期7卷 615-621页

作者： C.LACAVA T.DOMINGUEZ BUCIO A.Z.KHOKHAR P.HORAK Y.JUNG F.Y.GARDES D.J.richARDSON P.PETROPOULOS F.PARMIGIANI Optoelectronics Research Centre University of SouthamptonS0171BJ Southampton UK Currently at Microsoft Research UK CB1 2FB Cambridge UK

Dispersion engineering in optical waveguides allows applications relying on the precise control of phase matching conditions to be implemented. Although extremely effective over relatively narrow band spectral regions,dispersion control becomes increasingly challenging as the bandwidth of the process of interest *** matching can also be achieved by exploiting the propagation characteristics of waves exciting different spatial modes of the same waveguide. Phase matching control in this case relies on achieving very similar propagation characteristics across two, and even more, waveguide modes over the wavelengths of interest, which may be rather far from one another. We demonstrate here that broadband(>40 nm) four-wave mixing can be achieved between pump waves and a signal located in different bands of the communications spectrum(separated by50 nm) by exploiting interband nonlinearities. Our demonstration is carried out in the silicon-rich silicon nitride material platform, which allows flexible device engineering, allowing for strong effective nonlinearity at telecommunications wavelengths without deleterious nonlinear-loss effects.

关键词： Intermodal frequency silicon-rich silicon nitride waveguides

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<i>Ab Initio</i>Molecular Orbital Calculation for Optical and Electronic Properties Evaluation of Small and Medium Size silicon Nano-Clusters Found in silicon rich Oxide Films

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Journal of Modern Physics 2013年第11期4卷 1-26页

作者： Néstor David Espinosa Torres José Francisco Javier Flores Gracia José Alberto Luna López Juan Carlos Ramírez García Alfredo Morales Sánchez José Luis Sosa Sánchez David Hernández de la Luz Francisco Morales Morales Research Center for Advanced Materials S.C. Unit Monterrey-PIIT Apodaca México Research Center for Semiconductor Devices CIDS-ICUAP-BUAP Puebla México The Faculty of Chemical Sciences BUAP Puebla México

In systems in atomic and nano scales such as clusters or agglomerates constituted of particles from a few to less than one hundred of atoms, quantum confinement effects are very important. Their optical and electronic properties are often dependent on the size of the systems and the way in which the atoms in these clusters are bonded. Generally, these nano-structures display optical and electronic properties significantly different of those found in corresponding bulk materials. silicon agglomerates found in silicon rich Oxide (SRO) films have optical properties, which have reported as depended directly on nano-crystal size. Furthermore, the room temperature photoluminescence (PL) of silicon rich Oxides (SRO) has repeatedly generated a huge interest due to their possible applications in optoelectronic devices. However, a plausible emission mechanism has not yet widespread acceptance of the scientific community. In this research, we employed the Density Functional Theory with a functional B3LYP and a basis set 6 - 31G* to calculate the optical and electronic properties of small (six to ten silicon atoms) and medium size clusters of silicon (constituted of eleven to fourteen silicon atoms). With the theoretical calculation of the structural and optical properties of silicon clusters, it is possible to evaluate the contribution of silicon agglomerates in the luminescent emission mechanism experimentally found in thin SRO films.

关键词： Nano-Crystals silicon Clusters silicon-rich Oxide Luminescence Magic-Number

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Roles of soluble minerals in Cd sorption onto rice straw biochar

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Journal of Environmental Sciences 2022年第3期34卷 64-71页

作者： Ying-heng Fei Zuannan Zhang Zhuofeng Ye Qihang Wu Ye-tao Tang Tangfu Xiao School of Environment Science and Engineering Guangzhou UniversityGuangzhou 510006China School of Environment Science and Engineering Sun Yat-sen UniversityGuangzhou 510006China

Transforming to biochar provides an environmentally friendly approach for crop residue reutilization,which are usually applied as sorbent for heavy metal *** typical siliconrich material,the specific sorptive mechanisms of rice straw derived biochar(RSBC)are concerned,especially at the low concentration range which is more environmentally *** the present study,Cd sorption onto RSBCs at the concentration of ≤5 mg/L was *** sorptive capacity was positively correlated with the pyrolytic temperature of the biochar and the environmental pH *** soluble minerals of the RSBCs played the dominant roles in Cd sorption,contributing 29.2%,62.5%and 82.9%of the total sorption for RSBCs derived under 300℃,500℃and 700℃,*** number of cations,dominantly K^(+),were exchanged during the *** with cations and carbonates may also be contributive to the *** dissolution of silicon-containing minerals was found to be declined during sorption,suggesting its involvement in the sorption process,possibly through ***,the sparingly soluble silicate crystals may impose ignorable role in the *** with organic groups is only a minor mechanism in Cd sorption,compared to the much more dominant roles of the inorganic ashes.

关键词： Cadmium Sorption Rice straw Biochar silicon-rich

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Comparative study of high temperature anti-oxidation property of sputtering deposited stoichiometric and Si-rich SiC films

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Chinese Physics B 2022年第4期31卷 700-705页

作者： Hang-Hang Wang Wen-Qi Lu Jiao Zhang Jun Xu Key Laboratory of Materials Modification by Laser Ion and Electron BeamsMinistry of EducationSchool of PhysicsDalian University of TechnologyDalian 116024China

Stoichiometric and silicon-rich(Si-rich) SiC films were deposited by microwave electron cyclotron resonance(MWECR) plasma enhanced RF magnetron sputtering ***-deposited films were oxidized at 800℃,900 ℃,and 1000 ℃in air for 60 *** chemical composition and structure of the films were analyzed by x-ray photoelectron spectroscopy(XPS),Raman spectroscopy and Fourier transform infrared spectroscopy(FT-IR).The surface morphology of the films before and after the high temperature oxidation was measured by atomic force *** mechanical property of the films was measured by a *** anti-oxidation temperature of the Si-rich SiC film is 100 ℃ higher than that of the stoichiometric SiC *** oxidation layer thickness of the Si-rich SiC film is thinner than that of the stoichiometric SiC film in depth *** large amount of extra silicon in the Si-rich SiC film plays an important role in the improvement of its high temperature anti-oxidation property.

关键词： SiC anti-oxidation silicon-rich sputtering

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