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A high-efficiency grating coupler between single-mode fiber and silicon-on-insulator waveguide

Journal of Semiconductors 2017年第5期38卷 78-81页

作者： Rongrui Liu Yubing Wang Dongdong Yin Han Ye Xiaohong Yang Qin Han State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Sciences

We present the design of a diffractive grating structure and get the optimal parameters which can achieve more than 75%coupling efficiency（CE） between single-mode fiber and silicon-on-insulator（SOI） waveguide through 2D finite-different time-domain（FDTD） *** proposed architecture has a uniform structure with no bottom reflection element or silicon *** structure,including grating couplers,adiabatic tapers and interconnection waveguides can be fabricated on the SOI waveguide with only a single electron-beam lithography（ICP） step,which is CMOS-compatible.A relatively high coupling efficiency of 47.2%was obtained at a wavelength of 1562 nm.

关键词： grating coupler coupling efficiency silicon-on-insulator waveguide single-mode fiber integrated optics

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An intrinsic limitation to silicon-on-insulator waveguide Mach-Zehnder interference based electro-optic devices

An intrinsic limitation to silicon-on-insulator waveguide Ma...

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2010亚洲光电子会议光电器件及其集成分会场

作者： Sawsan Abdul-Majid Rob Vandusen Imad Hasan T.Garry Tarr Trevor J.Hall School of Information Technology and Engineering University of Ottawa Dept.of Electronics Carleton University

Mach-Zehnder interference（MZI）construction is broadly exploited to implement optical switches and modulators in the field of integrated optical/photonic ***-on-insulator（SOI）waveguides have been increasingly developed to implement highly integrated photonic devices and *** this work,for the SOI-waveguide MZI-type electro-optic（EO）modulated devices with free-carrier dispersion（FCD）effect,the FCD-induced extra optical absorption（EOA） loss and its negative impact upon the device performance are *** intrinsic limitation to this type of device is found to be the tension between the EOA loss and the interaction length for a half-wave *** numerical calculation and professional software simulation show the EOA loss of＜1.0dB determines an interaction length of *** performance decay processes of both EO switch and modulator due to the modulation-induced EOA loss are *** numerical calculation shows the optical on-chip（OC）loss is 1.0dB and the isolation between two outputs is 21dB for the EO switch,while for the EO modulator the OC loss is 1.0dB and 2.5dB at the off-and on-state,respectively,and the extinction ratio only approaches *** negative influence of this intrinsic limitation to the bandwidth of EO modulator is also analyzed.

关键词： silicon-on-insulator waveguide Mach-Zehnder interference free carrier dispersion effect intrinsic limitation extra optical absorption loss electro-optic switch&modulator

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Generation of broadband cascaded FWM products,supercontinuum and femtosecond wavelength conversion in SOI waveguide[邀请报告]

Generation of broadband cascaded FWM products,supercontinuum...

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全国第15次光纤通信暨第16届集成光学学术会议

作者：刘红军 Jin Wen Zhaolu Wang Nan Huang Qibing Sun State Key Laboratory of Transient Optics and Photonics technology Xi’an Institute of Optics and Precision MechanicsChinese Academy of Science（CAS）

＜正＞In recent years,silicon photonics has become a rapidly growing *** nonlinear effects in silicon-on-insulator（SOI） waveguides are attracting attention because of the large values of the Kerr parameter and the tight confinement of the optical mode,which can be used to develop different highly integrated multifunctional devices that perform both optical and electrical operations on a single low-cost chip,such as laser,amplifier,modulator,wavelength converter,and optical parametric *** this paper,the generation of the broadband cascaded four-wave-mixing（FWM） products,frequency comb, supercontinuum and femtosecond pulse wavelength conversion in the SOI waveguide has been investigated. Firstly,the two degenerate pump waves are launched to near the zero dispersion wavelength of the SOI waveguide in order to realize the phase matching *** bandwidth of the cascaded FWM covers more than 1200 nm,which extends from C-band to IR-band with the products of the cascaded FWM using just a few ***,we propose a practical method to broaden the bandwidth of super continuum generated in silicon-on-insulator（SOI） waveguide by controlling the initial chirp of inputting femtosecond pulses,which has the main impact on the initial stage of the spectral broadening caused by the self-phase modulation（SPM） *** results show that the bandwidth and flatness of the supercontinuum generated in SOI waveguide are sensitive to the initial chirp of inputting femtosecond pulses,the supercontinuum bandwidth can be remarkably enhanced by inputting positive chirp femtosecond pulses with a decreased propagation distance required by soliton fission,and the maximum bandwidth of supercontinuum can be increased to 1500 ***,the femtosecond pulse wavelength conversion with the conversion bandwidth from 1400 nm to 1700 nm in the telecommunication bands via four-wave mixing in a 1.5-mm-long silicon rib waveguide is also demonstrated.

关键词： silicon-on-insulator waveguide four wave mixing wavelength conversion silicon photonics

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