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Synthesis of strong SiV photoluminescent diamond particles on silica optical fiber by chemical vapor deposition

Chinese Physics B 2018年第3期27卷 481-486页

作者：仰宗春梅盈爽陈成克阮银兰胡晓君 College of Materials Science and Engineering Zhejiang University of Technology ARC Centre of Excellence in Nanoscale Biophotonics Institute of Photonics and Advanced SensingThe University of Adelaide

The separated silicon-vacancy （SiV） photoluminescent diamond particles were synthesized on a silica optical fiber by hot filament chemical vapor deposition （HFCVD）. The effects of the pre-treated method and chamber pressure on the microstructure and photoluminescence of the diamond particles were investigated. The results show that the diamond particles are homogeneously distributed on the surface of the optical fiber. With the chamber pressure increasing from 1.6 kPa to 3.5 kPa, the shape of the particles transforms from flake to circle, while the diamond particles cannot be deposited on the fiber with the pressure further increased to 4.5 kPa. The samples synthesized under 2.5 kPa chamber pressure are composed of diamond particles with size around 200-400 nm, exhibiting stronger SiV photoluminescence with the width of around 6 nm.

关键词： diamond silicon vacancy photoluminescence optical fiber

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Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4H-SiC

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Nanomanufacturing and Metrology 2020年第3期3卷 205-217页

作者： Ying Song Zongwei Xu Rongrong Li Hong Wang Yexin Fan Mathias Rommel Jiayu Liu Georgy V.Astakhov Gregor Hlawacek Bingsheng Li Jun Xu Fengzhou Fang State Key Laboratory of Precision Measuring Technology and Instruments Centre of MicroNano Manufacturing TechnologyTianjin UniversityTianjin 300072China State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory School of PhysicsPeking UniversityBeijing 100871China State Key Laboratory of Separation Membranes and Membrane Processes Tianjin Polytechnic UniversityTianjin 300387China Fraunhofer Institute for Integrated Systems and Device Technology(IISB).Schottkystrasse 10.91058 Erlangen Germany Institute of Ion Beam Physics and Materials Research Helmholtz-Zentrum Dresden-Rossendorf(HZDR).Bautzner Landstrasse 400.01328 DresdenGermany State Key Laboratory for Environment-friendly Energy Materials Southwest University of Science and TechnologyMianyang 621010SichuanChina

Color centers in silicon carbide(SiC)are promising candidates for quantum technologies.However,the richness of the polytype and defect configuration of SiC makes the accurate control of the types and position of defects in SiC still challenging.In this study,helium ion-implanted 4H-SiC was characterized by atomic force microscopy(AFM),confocal photoluminescence(PL),and confocal Raman spectroscopy at room temperature.PL signals of silicon vacancy were found and analyzed using 638-nm and 785-nm laser excitation by means of depth profiling and SWIFT mapping.Lattice defects(C-C bond)were detected by continuous laser excitation at 532 nm and 638 nm,respectively.PL/Raman depth profiling was helpful in revealing the three-dimensional distribution of produced defects.Differences in the depth profiling results and SRIM simulation results were explained by considering the depth resolution of the confocal measurement setup,helium bubbles,as well as swelling.

关键词： Helium ion implantation silicon carbide(SiC) Color center Point defect silicon vacancy Confocal photoluminescence spectroscopy Raman spectroscopy Atomic force microscopy(AFM)

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