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Enhancement of silicon sub‑bandgap photodetection by helium‑ion implantation

Frontiers of Optoelectronics 2023年第4期16卷 101-108页

作者： Zhao Wang Xiaolei Wen Kai Zou Yun Meng Jinwei Zeng Jian Wang Huan Hu Xiaolong Hu School of Precision Instrument and Optoelectronic Engineering Tianjin UniversityTianjin 300072China Key Laboratory of Optoelectronic Information Science and Technology Ministry of EducationTianjin 300072China Center for Micro and Nanoscale Research and Fabrication University of Science and Technology of ChinaHefei 230026China Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhan 430074China Optics Valley Laboratory Wuhan 430074China ZJUI Institute International CampusZhejiang UniversityHaining 311400China State Key Laboratory of Fluidic Power&Mechanical Systems Zhejiang UniversityHangzhou 310027China

silicon sub-bandgap photodetectors can detect light at the infrared telecommunication wavelengths but with relatively weak photo-response.In this work,we demonstrate the enhancement of sub-bandgap photodetection in silicon by helium-ion implantation,without afecting the transparency that is an important benefcial feature of this type of photodetectors.With an implantation dose of 1×10^(13)ions/cm^(2),the minimal detectable optical power can be improved from−33.2 to−63.1 dBm,or,by 29.9 dB,at the wavelength of 1550 nm,and the photo-response at the same optical power(−10 dBm)can be enhanced by approximately 18.8 dB.Our work provides a method for strategically modifying the intrinsic trade-of between transparency and strong photo-responses of this type of photodetectors.

关键词： Sub-bandgap optical absorption Helium-ion implantation silicon photodetector Non-invasive photodetection

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Simulation and Design of a High Responsibility PIN photodetector

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Semiconductor Photonics and Technology 2010年第2期16卷 93-98页

作者： GENG Boyun LI Xiaoyun NIU Pingjuan School of Information and Communication Engineering Tianjin Polytechnic University Tianjin 300160 CHN

A silicon-based PIN photodetector structure with the characteristics of high responsibility and high cut-off frequency fabricated with the PERL(the passivated emitter and the rear locally-diffused)technologies is introduced in this paper.After making some tiny adjustments of the structure,Silvaco software is used to simulate three similar structures of PIN photodetector by measuring the spectral response,dark current,cut-off frequency and dc characteristics.From the results,it is concluded that PIN photodetector with the middle shallow diffusion area is superior to the other two ones in dark current,at least 35% lower.The responsibility of these three kinds of detector reaches the degree of 0.3A/W,and the highest spectral response is around 600nm.Their cut-off frequencies are all over 108Hz.

关键词： silicon photodetector high responsibility PERL technique silvaco software

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Simulation and Design of a High Responsibility PIN photodetector

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Semiconductor Photonics and Technology 2010年第Z1期 92-97页

作者： GENG Boyun,LI Xiaoyun,NIU Pingjuan(School of Information and Communication Engineering,Tianjin Polytechnic University,Tianjin 300160,CHN)

关键词： silicon photodetector high responsibility PERL technique silvaco software

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