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Bulk single crystal growth of sige by PMCZ method

Rare Metals 2003年第3期22卷 197-201页

作者： ZHANG Weilian, NIU Xinhuan, CHEN Hongjian, ZHANG Jianxin, SUN Junsheng, and ZHANG EnhuaiSemiconductor Material Institute, Hebei University of Technology, Tian jin 300130, China Semiconductor Material Institute Hebei University of Technology 天津 300130

A new type of magnetic device was used to replace the conventionalelectro-magnetic field for CZSi (doped with Ge) growth. The device was composed of three permanentmagnetic rings and called PMCZ device. The lines of magnetic force are horizontally distributed atradial 360℃. Using the ring permanent magnetic field, thermal convection in melt and centrifugalpumping flows due to crystal rotation could be strongly suppressed so that the fluctuations oftemperature and micro-growth rate at solid/liquid interface could be restrained effectively. In thePMCZ condition, the growing environment of sige bulk single crystal was similar to the crystalgrowth in space under the condition of micro-gravity. The motion of impurities (Ge, oxygen, etc.)had been controlled by diffusion near the solid/liquid interface. Oxygen concentration became lowerand the distribution of composition became more homogeneous along longitudinal direction and acrossa radial section in the grown sige crystal. The mechanism of PMCZ superior to MCZ was alsodiscussed.

关键词： sige single crystal composition homogeneous PMCZ thermal convection crystal growth

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Determination of Ge content in high concentration Ge-doped Czochralski Si single crystals by FTIR

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Rare Metals 2005年第3期24卷 226-228页

作者： JIANG Zhongwei ZHANG Weilian NIU Xinhuan Institute of Information Functional Materials Hebei University of Teclmology Tianjin 300130 China

sige single crystals with different Ge concentrations were measured by Fourier transform infrared （FTIR） spectroscopy at room temperature （RT） and 10 K. A new peak appears at the wave number of 710 cm^-1 and the spectroscopy becomes clearer with an increase in Ge content. The absorption strength and wave sharp of the 710 cm^-1 peak are independent of temperature. The relation of the absorption coefficient amax, the band width of half maximum （BWHM） Wit2 of the 710 cm^-1 peak, and the Ge concentration is determined with the Ge content obtained by SEM-EDX. The conversion factor is k = 1.211 at 10 K. Therefore, the Ge content in high concentration Ge doped CZ-Si single crystals can be determined by FTIR.

关键词： sige single crystal Ge content FTIR Czochralski method

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