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Gas Source Molecular Beam Epitaxy Growth of Si_(1-x)Ge_x/Si alloys

Rare Metals 1997年第2期16卷 43-48页

作者：刘学锋李建平孙殿照中科院半导体所北京

Strained sige alloys are successfully grown on Si(100) substrate in gas source molecular beam epitaxy system using disilane (Si 2H 6) and germane (GeH 4). The surface reconstructions are monitored by in situ reflection high energy electron diffraction during epitaxy. At a fixed substrate temperature, the Ge composition in the alloys increase with GeH 4/(GeH 4+2Si 2H 6) gas flow rate ratio. Surface morphologies of the grown samples show a strong dependence on the Ge composition, substrate temperature and sige epilayer thickness. Results indicate that high substrate temperature and large Ge composition are favorable for the growth mode transition from two dimensional to three dimensional growth.

关键词： sige alloys GSMBE Commensurate growth Lattice mismatch

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Electronic structure of O-doped sige calculated by DFT+U method

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Chinese Physics B 2016年第12期25卷 377-389页

作者：赵宗彦杨雯杨培志 Faculty of Materials Science and Engineering Kunming University of Science and Technology Yunnan Key Laboratory of Micro/Nano Materials & Technology School of Materials Science and EngineeringYunnan University Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials (Ministry of Education) Yunnan Normal University

To more in depth understand the doping effects of oxygen on sige alloys, both the micro-structure and properties of O-doped sige （including： bulk, （001） surface, and （110） surface） are calculated by DPT ＋ U method in the present work. The calculated results are as follows. （i） The （110） surface is the main exposing surface of sige, in which O impurity prefers to occupy the surface vacancy sites. （ii） For O interstitial doping on sige （110） surface, the existences of energy states caused by 0 doping in the band gap not only enhance the infrared light absorption, but also improve the behaviors of photo-generated carriers. （iii） The finding about decreased surface work function of O-doped sige （110） surface can confirm previous experimental observations. （iv） In all cases, O doing mainly induces the electronic structures near the band gap to vary, but is not directly involved in these variations. Therefore, these findings in the present work not only can provide further explanation and analysis for the corresponding underlying mechanism for some of the experimental findings reported in the literature, but also conduce to the development of μc-sige-based solar ceils in the future.

关键词： sige alloys 0 doping electronic structure density functional theory (DFT) calculations

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