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检索条件"主题词=SiC-MESFET"
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4H-sic SOI-mesfet with a Step in Buried Oxide for Improving Electrical Performance
4H-SiC SOI-MESFET with a Step in Buried Oxide for Improving ...
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2011 IEEE International Conference on Computer Science and Automation Engineering(CSAE 2011)
作者: Hamid Amini Moghadam Ali A.Orouji S.E.Jamali Mahabadi Mahabadi Department of Electrical Engineering Semnan University Semnan Iran Department of Electrical Engineering Semnan University Semnan Iran
This paper introduces a novel 4H-sic SOI-mesfet with a step in buried oxide (SSOI-mesfet) for improving breakdown *** investigate the improvement in device performance with two-dimensional and two-carrier device ***... 详细信息
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