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Progress of si-based nanocrystalline luminescent materials

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Chinese Science Bulletin 2002年第15期47卷 1233-1242页

作者： PENG Yingcai ZHAO Xinwei FU Guangsheng College of Electronic and Informational Engineering Hebei UniversityBaoding 071002China State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences Department of Physics Faculty of Science Tokyo University of Science1-3 KagurazakaShinjuku-ku162-8601 TokyoJapan College of Physical Science and Technology.Hebei University.Baoding 071002 China

si-based nanomaterials are some new photo-elctronic and informational materials developed rapidly in recent years, and they have potential applications in the light emitting devices, e.g. si light emitting diode, si laser and integrated si-based photoelectronics. Among them are nano-scale porous silicon (ps), si nanocrystalline embedded siO2 (siOx, x si nanoquantum dot and si/siO2 superlattice, etc. At present, there are various indications that if these materials can achieve efficient and stable luminescence, which are photoluminescence (PL) and electroluminescence (EL), it is possible for them to lead to a new informational revolution in the early days of the 21st century. In this article, we will mainly review the progress of study on si-based nanomaterials in the past ten years. The involved contents are the fabricated methods, structural characterizations and light emitting properties. Finally, we predicate the developed tendency of this field in the following ten years.

关键词： si-based nanomaterials fabricated method structural characterization light emitting mechanism si-based photoelectronic devices.

Research progress of si-based germanium materials and devices

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Journal of Semiconductors 2016年第8期37卷 1-9页

作者：成步文李成刘智薛春来 State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Department of Physics Semiconductor Photonics Research Center Xiamen University

si-based germanium is considered to be a promising platform for the integration of electronic and pho- tonic devices due to its high carrier mobility, good optical properties, and compatibility with si CMOS technology. However, some great challenges have to be confronted, such as：（1） the nature of indirect band gap of Ge; （2） the epitaxy of dislocation-free Ge layers on si substrate; and （3） the immature technology for Ge devices. The aim of this paper is to give a review of the recent progress made in the field of epitaxy and optical properties of Ge heterostructures on si substrate, as well as some key technologies on Ge devices. High crystal quality Ge epilayers, as well as Ge/siGe multiple quantum wells with high Ge content, were successfully grown on si substrate with a low-temperature Ge buffer layer. A local Ge condensation technique was proposed to prepare germanium-on- insulator （GOI） materials with high tensile strain for enhanced Ge direct band photoluminescence. The advances in formation of Ge n＋p shallow junctions and the modulation of Schottky barrier height of metal/Ge contacts were a significant progress in Ge technology. Finally, the progress of si-based Ge light emitters, photodetectors, and MOSFETs was briefly introduced. These results show that si-based Ge heterostructure materials are promising for use in the next-generation of integrated circuits and optoelectronic circuits.

关键词： Ge Ge-on-insulator si-based epitaxy light emitting diode photodetector MOSFET

Studies on the microstructure,optical and electrical properties of organic microcavity devices based on a porous silicon reflector

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Science China(Technological Sciences) 2005年第2期48卷 191-201页

作者： XIONG Zuhong1, FAN Yongliang2, ZHAN Yiqiang2, ZHANG Songtao2, DING Xunmin2 & HOU Xiaoyuan2 1. School of Physics, Southwest China-Normal University, Chongqing 400715, China 2. Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, China School of Physics Southwest China-Normal University Chongqing China Surface Physics Laboratory (National Key Laboratory) Fudan University Shanghai China

A novel type of microcavity organic light-emitting diode based on a porous silicon distributed Bragg reflector (PS-DBR) has first been achieved and its microstructure, optical, and electrical properties have also been investigated in detail. The microcavity is made up of the central active organic multilayer sandwiched between a top silver film and a bottom PS-DBR, formed by electrochemical etching of p++-si substrate. The field- emission scanning electron microscopy cross-section images show the nanometer-scale layered structure and flat interfaces inside the microcavity. The reflectivity (relative to an Al mirror) of the PS-DBR is up to 99%, and the stopband is about 160 nm wide. Resonant cavity mode appears as a tip in the reflectivity spectrum of the si-based organic multilayer films, which is a symbol that the si-based organic multilayer structure is indeed a microcavity. The peak widths of the electroluminescence (EL) spectra from the cavities emitting green and red light are greatly reduced from 85 nm and 70 nm to 8 nm and 12 nm, respectively, as compared with those measured from non-cavity structures. Note that the EL emission from the cavity devices is single-mode, and the off-resonant optical modes are highly suppressed. Moreover, increases of a factor of about 6 and 4 of the resonant peak intensity from the cavities emitting green and red light are also observed, respectively. In addition, the current-brightness-voltage characteristics and effect parameters on the lifetime of the cavity devices are also discussed. The present technique for obtaining enhanced EL emission from si-based organic microcavity may also be another novel effective method for realizing si-based optoelectronics device integration.

关键词： electrochemical etching, si-based microcavity, electroluminescence, organic light-emitting diodes.

Zero biased Ge-on-si photodetector with a bandwidth of 4.72 GHz at 1550 nm

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Chinese Physics B 2009年第6期18卷 2542-2544页

作者：薛海韵薛春来成步文俞育德王启明 State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Sciences

High quality Ge was epitaxially grown on si using ultrahigh vacuum/chemical vapor deposition （UHV/CVD）. This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 μm Ge, with responsivities as high as 0.38 and 0.21 A/W at 1.31 and 1.55 μm, respectively. The dark current density is 0.37 mA/cm^2 and 29.4 mA/cm^2 at 0 V and a reverse bias of 0.5 V. The detector with a diameter of 30μm, a 3 dB-bandwidth of 4.72 GHz at an incident wavelength of 1550 nm and zero external bias has been measured. At a reverse bias of 3 V, the bandwidth is 6.28 GHz.

关键词： si-based Ge epitaxy photodetector