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Recent Progress of Heterogeneous Integration for semiconductor materials and Microsystems

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Recent Progress of Heterogeneous Integration for Semiconduct...

Formation and Decay of Electron-Hole Plasma Clusters in a Direct-Gap semiconductor CuCl

2006 8th International Conference on Solid-State and Integrated Circuit Technology

作者： Eric Z.X.Liu Vorrada Loryuenyong Nathan W.Cheung University of California BerkeleyCaliforniaUSA 94720-1770

ISBN: (纸本)1424401607

＜正＞Heterogeneous integration utilizes a paste-and-cut approach to alleviate the limitations of monolithic integration by synthesizing and fabricating each material subsystem independently and then assemble them on a receptor substrate at the proper node of the integration *** technique enables new and novel functionalities by integrating dissimilar semiconductors material systems to assemble a *** report recent developments of GeOI substrates,High-Brightness LED,and Opto-MEMS to illustrate versatility of this approach.

关键词： Microelectromechanical devices semiconductor materials DNA Integration integration Monolithic integration assemblies Heterogeneous high brightness light-emitting diode

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Chinese Physics Letters 2003年第10期20卷 1833-1835页

作者：姜磊吴明卫 M.Nagai M.Kuwata-Gonokami StructureResearchLaboratory UniversityofScienceandTechnologyofChinaHefei230026 DepartmentofPhysics UniversityofScienceandTeclmologyofChinaHefe230026 DepartmentofPhysics KyotoUniversityKyoto606-8502Japan DepartmentofAppliedPhysics UniversityofTokyoHongoBunkyo-kuTokyo113-8656Japan

The master equation for the cluster-size distribution function is solved numerically to investigate the electron-hole droplet formation claimed to be discovered in the direct-gap CuCl excited by picosecond laser pulses [Nagai et al. Phys. Rev. Lett. 86 (2001) 5795; J. Lumin. 100 (2002) 233]. Our result shows that for the excitation in the experiment, the average number of pairs per cluster (ANPC) is only around 5.2, much smaller than that (106 typically for Ge) of the well studied electron-hole droplet in indirect-gap semiconductors such as Ge and Si. These results indicate that what measured in CuCl by Nagai et al. may not come from the EHD formed from exciton gas, instead possibly come from some bubbles of excitons in metallic liquid.

关键词： Exciton Electrohydrodynamics bubbles semiconductor materials decay lumin Excitation Clusters Distribution function aluminium Decay Electron-hole plasma Master equation Picosecond pulsed laser device digitally

Impact of propagation effects on intersubband Rabi flopping in semiconductor quantum wells

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维普期刊数据库

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Chinese Optics Letters 2008年第9期6卷 689-692页

作者：周旭升崔妮祖继锋龚尚庆 Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences

We investigate intersubband Rabi flopping in modulation-doped semiconductor quantum wells with and without the propagation effects, respectively. It is shown that propagation effects have a larger impact on Rabi flopping than the nonlinearities rooted from electron-electron interactions in multiple quantum wells. By using ultrashort rr pulses, an almost complete population inversion exists if the propagation effects are not considered; while no complete population inversion occurs in the presence of propagation effects. Furthermore, the magnitude of the impact of propagation effects may be controlled by varying the carrier density.

关键词： Electric conductivity Electron electron interactions Laser pulses Modulation semiconductor materials semiconductor quantum wires Wells

High performance of semiconductor optical amplifier available for cold atom physics research

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Chinese Optics Letters 2009年第1期7卷 46-48页

作者：马千里夏林鹿博熊炜张胤周小计陈徐宗 Institute of Quantum Electronics School of Electronics Engineering and Computer SciencePeking University

We present a novel design of a compact, stable, and easy-adjustable semiconductor optical amplifier （SOA） system. This SOA system is capable of providing up to 560-roW laser power at the wavelength of 852 nm. For the continuous-wave （CW） seeding laser, the amplification gain can reach 18 dB. We add amplitude modulation onto the CW laser and measure the modulation amplification between seeding and output laser. The amplification gain remains constant within the frequency range from 10 Hz to 1 MHz. The whole system could work in ultra-stable condition： for CW seeding laser, the fluctuation of output power is less than 0.33% in several hours.

关键词： Amplification Electric conductivity Lasers Light amplifiers Modulation Optical switches Optoelectronic devices semiconductor materials semiconductor optical amplifiers

Photo-responsive metal/semiconductor hybrid nanostructure:A promising electrocatalyst for solar light enhanced fuel cell reaction

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Chinese Chemical Letters 2021年第4期32卷 1348-1358页

作者： Jiayue Hu Chunyang Zhai Mingshan Zhua Guangdong Key Laboratory of Environmental Pollution and Health School of EnvironmentJinan UniversityGuangzhou 511443China School of materials Science and Chemical Engineering.Ningbo University Ningbo 315211China

Direct alcohol fuel cells(DAFCs)have received wide attention as a new type of clean energy device because of their high energy conversion efficiency,portability,non-toxicity and *** catalysts are the key factors affecting the performance of *** studies show that using the optical activity of semiconductor materials as the carriers of traditional precious metal electrocatalysts,under the illumination of light sources,can greatly improve the electrocatalytic activity and stability of *** this review,the research progress of photo-responsive metal/semiconductor hybrids as the electrocatalysts for DAFCs in recent years is summarized,including:(1)Mechanism and advantages of photo-assistant electrochemical alcohol oxidation reaction,(2)me tal/semiconductor electrocatalyst for the different type of fuel cell reactions,(3)different kind of metals in photo-responsive metal/semiconductor hybrid nanostructure,(4)the personal prospects of the photo-responsive metal/semiconductor electrode for future application in DAFCs.

关键词： Direct alcohol fuel cells semiconductor materials Noble metal Photo-responsive electrocatalysis Hybrid material

Current-voltage characteristics simulation and analysis of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

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Chinese Optics Letters 2008年第8期6卷 615-618页

作者：张军琴杨银堂娄利飞赵妍 School of Microelectronics Xidian UniversityKey Lab of Ministry of Education for Wide Bandgap Semiconductor Materials and Devices

The current-voltage （I-V） characteristics of 4H-SiC metal-semiconductor-metal （MSM） ultraviolet photodetector with different finger widths and spacings, different carrier concentrations and thicknesses of n-type epitaxial layer are simulated. The simulation results indicate that the dark current and the photocurrent both increase when the finger width increases. But the effect of finger width on the dark current is more significant. On the other hand, the effect of finger spacing on the photocurrent is more significant. When the finger spacing increases, the photocurrent decreases and the dark current is almost changeless. In addition, it is found that the smaller the carrier concentration of n-type epitaxial layer is, the smaller the dark current and the larger the photocurrent will be. It is also found that I-V characteristics of MSM detector also depend on the epitaxial layer thickness. The dark current of detector is smaller and the photocurrent is larger when the epitaxial layer thickness is about 3μm.

关键词： Bioactivity Carrier concentration Civil aviation Concentration (process) Electric conductivity Epitaxial layers Markov processes Metals Molecular beam epitaxy Optoelectronic devices Photocurrents Photodetectors semiconductor materials Silicon carbide

Effect of heat-treatment on the surface properties of gallium phosphide nanosolids by Raman spectroscopy

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Rare Metals 2006年第3期25卷 253-259页

作者： ZHANG Zhaochun YUE Longyi GUO Jingkang School of materials Science and Technology Shanghai University Shanghai 200072 China Bioinformatics Research Center Shanghai University Shanghai 200072 China

Raman spectra of gallium phosphide （GAP） nanosolids （unheated and heat-treated at 598 and 723 K, respectively） were investigated. It was observed that both the longitudinal optical mode （LO） and the transverse optical mode （TO） displayed an asymmetry on the low-wavenumber side. The scattering bands were fitted to a sum of four Lorentzians which were assigned to the LO mode, surface phonon mode, TO mode, and a combination of Ga-O-P symmetric bending and sum band formed from the X-point TA ＋ LA phonons, respectively. Analysis of the characteristic of surface phonon mode revealed that the surface phonon peak of the GaP nanosolids could be confirmed. In the infrared spectrum of the GaP nanoparticles, we observed the bands on account of symmetric stretching and bending of PO2, as well as stretching of Ga-O The Raman scattering intensity arising from the Ga-O-P linkages increased as increasing the heat-treatment temperature.

关键词： semiconductor materials nanosolids Raman spectrum gallium phosphide

First-principles calculations of structural, electronic, and thermodynamic properties of ZnO_(1-x)S_x alloys

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Chinese Physics B 2014年第10期23卷 394-400页

作者： Muhammad Zafar Shabbir Ahmed M.Shakil M.A.Choudhary Simulation Laboratory Department of Physics The Islamia University of Bahawalpur

In this study the pseudo-potential method is used to investigate the structural, electronic, and thermodynamic proper- ties of ZnOl_xSx semiconductor materials. The results show that the electronic properties are found to be improved when calculated by using LDA ~ U functional as compared with local density approximation （LDA）. At various concentrations the ground-state properties are determined for bulk materials ZnO, ZnS, and their tertiary alloys in cubic zinc-blende phase. From the results, a minor difference is observed between the lattice parameters from Vegard＇s law and other calculated results, which may be due to the large mismatch between lattice parameters of binary compounds ZnO and ZnS. A small deviation in the bulk modulus from linear concentration dependence is also observed for each of these alloys. The ther- modynamic properties, including the phonon contribution to Helmholtz free energy △F, phonon contribution to internal energy △E, and specific iheat at constant-volume Cv, are calculated within quasi-harmonic approximation based on the calculated phonon dispersion relations.

关键词： first principles calculations density functional theory (DFT) semiconductor materials structural,electronic, and thermal properties

Structure and optical characterization of GaP-SiO_2 co-sputtered films

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Rare Metals 2008年第6期27卷 580-585页

作者： CHAI Yuesheng YANG Meihui ZHANG Mingang SUN Gang School of materials Science and Engineering Shanghai University Shanghai 200072 China School of Materzals Sctence and Engineermg Taiyuan University of Science and Technology Taiyuan 030024 China

The films of GaP nanocrystals embedded in SiO2 matrix were prepared by radio frequency magnetron co-sputtering and subsequent annealing technology. The structure and morphology of the films were investigated by scanning electron microscope, X-ray diffraction, and energy dispersive spectrum. Raman spectra results showed that the transverse optical phonon model （TO） and the longitudinal optical phonon model （LO） of GaP nanocrystals were both discovered to undergo red shift, broadening, and asymmetry. The red shift degree of the TO model was about 8.8 cm^-1. The luminescence spectrum of the GaP/SiO2 film consisted of several emission peaks. 2.84-2.54 eV blue light emission was explained by the quantum confinement-luminescence centers model （QC-LCs）.

关键词： semiconductor materials nanocrystal-embedded film photoluminescence radio frequency magnetron co-sputtering