检索结果-南通市图书馆

Optimization of terahertz monolithic integrated frequency multiplier based on trap-assisted physics model of THz schottky barrier varactor

引用

Chinese Physics B 2020年第10期29卷 308-314页

作者： Lu-Wei Qi Jin Meng Xiao-Yu Liu Yi Weng Zhi-Cheng Liu De-Hai Zhang Jing-Tao Zhou Zhi Jin Institute of Microelectronics of the Chinese Academy of Sciences Beijing 100029China National Space Science Center the Chinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences Beijing 100190China

The optimization of high power terahertz monolithic integrated circuit (TMIC) is systemically studied based on the physical model of the schottky barrier varactor (SBV) with interface defects and tunneling effect. An ultra-thin dielectric layer is added to describe the extra tunneling effect and the damping of thermionic emission current induced by the interface defects. Power consumption of the dielectric layer results in the decrease of capacitance modulation ration (Cmax/Cmin), and thus leads to poor nonlinear C–V characteristics. The proposed schottky metal-brim (SMB) terminal structure could improve the capacitance modulation ration by reducing the influence of the interface charge and eliminating the fringing capacitance effect. Finally, a 215 GHz tripler TMIC is fabricated based on the SMB terminal structure. The output power is above 5 mW at 210–218 GHz and the maximum could exceed 10 mW at 216 GHz, which could be widely used in terahertz imaging, radiometers, and so on. This paper also provides theoretical support for the SMB structure to optimize the TMIC performance.

关键词： C-V characteristic physics-based model terahertz monolithic integrated circuit(TMIC) schottky barrier varactor

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Improvements in reverse breakdown characteristics of THz GaAs schottky barrier varactor based on metal-brim structure

引用

Chinese Physics B 2020年第5期29卷 464-468页

作者： Lu-Wei Qi Xiao-Yu Liu Jin Meng De-Hai Zhang Jing-Tao Zhou Key Laboratory of Microwave Remote Sensing National Space Science CenterChinese Academy of SciencesBeijing 100190China Institute of Microelectronics of the Chinese Academy of Sciences Beijing 100029China University of Chinese Academy of Sciences Beijing 100049China

The excellent reverse breakdown characteristics of schottky barrier varactor(SBV)are crucially required for the application of high power and high efficiency *** SBV with a novel schottky structure named metal-brim is fabricated and systemically *** with normal structure,the reverse breakdown voltage of the new type SBV improves from-7.31 V to-8.75 *** simulation of the schottky metal-brim SBV is also *** factors,namely distribution of leakage current,the electric field,and the area of space charge region are mostly concerned to explain the physical *** metal-brim structure is a promising approach to improve the reverse breakdown voltage and reduce leakage current by eliminating the accumulation of charge at schottky electrode edge.

关键词： breakdown characteristics schottky metal-brim schottky barrier varactor GaAs

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：