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Nano Research 2014年第7期7卷 1083-1091页

作者： Guofeng Hu Ranran Zhou Ruomeng Yu Lin Dong Caofeng Pan Zhong Lin Wang Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 China School of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332-0245 USA

A ZnO micro/nanowire has been utilized to fabricate schottky-contacted humidity sensors based on a metal-semiconductor-metal （M-S-M） structure. By means of the piezotronic effect, the signal level, sensitivity and sensing resolution of the humidity sensor were significantly enhanced when applying an external strain. Since a higher schottky barrier markedly reduces the signal level, while a lower schottky barrier decreases the sensor sensitivity due to increased ohmic transport, a 0.22% compressive strain was found to optimize the performance of the humidity sensor, with the largest responsivity being 1,240%. The physical mechanism behind the observed mechanical-electrical behavior was carefully studied by using band structure diagrams. This work provides a promising way to significantly enhance the overall performance of a schottky-contact structured micro/nanowire sensor.

关键词： piezotronic effect humidity sensor ZnO micro/nanowire schottky contact

schottky barrier modulation of bottom contact SnO_(2) thin-film transistors via chloride-based combustion synthesis

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Journal of Materials Science & Technology 2023年第17期148卷 199-208页

作者： Bongho Jang Junhee Lee Hongki Kang Jaewon Jang Hyuk-Jun Kwon Department of Electrical Engineering and Computer Science DGISTDaegu 42988South Korea School of Electronic and Electrical Engineering Kyungpook National UniversityDaegu 41566South Korea School of Electronics Engineering Kyungpook National UniversityDaegu 41566South Korea Convergence Research Advanced Centre for Olfaction DGISTDaegu 42988South Korea

The enhanced carrier flow at the interface between Au and SnO_(2)semiconductors,which initially form schottky contacts,is realized using chloride-based combustion ***-based combustion sys-tems can achieve chlorine(Cl)doping effects as well as conversion to crystalline SnO_(2)films at clearly lower temperatures(∼250℃)than conventional *** to the Cl doping effect,the high carrier concentration can induce thin potential barriers at the metal/semiconductor(MS)junctions,resulting in carrier injection by *** a result,compared to conventional SnO_(2)thin-film transistors,the de-vices fabricated by combustion synthesis exhibit significantly improved electrical performance with field-effect mobility of 6.52 cm 2/Vs(∼13 times),subthreshold swing of 0.74 V/dec,and on/offratio of∼10^(7)below 300℃.Furthermore,because of the enhanced tunneling carriers induced by the narrowed barrier width,the schottky barriers are significantly reduced from 0.83 to 0.29 eV(65%decrease)at 250℃and from 0.42 to 0.17 eV(60%decrease)at 400℃.Therefore,chloride-based combustion synthesis can con-tribute to developing SnO_(2)-based electronics and flexible devices by achieving both high-quality oxide films and improved current flow at the MS interface with low-temperature annealing.

关键词： SnO_(2) Combustion Sol-gel schottky contact Thin-film transistors

Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC schottky contacts formed at different annealing temperatures

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Chinese Physics B 2018年第9期27卷 524-528页

作者： Sheng-Xu Dong Yun Bai Yi-Dan Tang Hong Chen Xiao-Li Tian Cheng-Yue Yang Xin-Yu Liu High-Frequency High-Voltage Device and Integrated Circuits R & D Center Institute of Microelectronics of the Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China

The electrical characteristics of W/4H-SiC schottky contacts formed at different annealing temperatures have been measured by using current-voltage-temperatures（I-V -T） and capacitance-voltage-temperatures（C-V -T） techniques in the temperature range of 25℃-175℃. The testing temperature dependence of the barrier height（BH） and ideality factor（n） indicates the presence of inhomogeneous barrier. Tung＇s model has been applied to evaluate the degree of inhomogeneity, and it is found that the 400℃ annealed sample has the lowest T0 of 44.6 K among all the schottky contacts. The barrier height obtained from C-V -T measurement is independent of the testing temperature, which suggests a uniform *** x-ray diffraction（XRD） analysis shows that there are two kinds of space groups of W when it is deposited or annealed at lower temperature（≤500℃）. The phase of W2C appears in the sample annealed at 600℃, which results in the low BH and the high T0. The 500℃ annealed sample has the highest BH at all testing temperatures, indicating an optimal annealing temperature for the W/4H-SiC schottky rectifier for high-temperature application.

关键词： SiC schottky contact inhomogeneity barrier x-ray diffraction(XRD)

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN schottky contacts

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Chinese Physics B 2009年第4期18卷 1618-1621页

作者：刘芳王涛沈波黄森林芳马楠许福军王鹏姚建铨 College of Precision Instrument and Opto-Electronics Engineering Institute of Laser and Optoelectronics Tianjin University Key Lab of Optoelectric Information Science and Technology of Ministry of Education Tianjin University State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University

Recently GaN-based high electron mobility transistors （HEMTs） have revealed the superior properties of a high breakdown field and high electron saturation velocity. Reduction of the gate leakage current is one of the key issues to be solved for their further improvement. This paper reports that an Al layer as thin as 3 nm was inserted between the conventional Ni/Au schottky contact and n-GaN epilayers, and the schottky behaviour of Al/Ni/Au contact was investigated under various annealing conditions by current-voltage （I-V） measurements. A non-linear fitting method was used to extract the contact parameters from the I-V characteristic curves. Experimental results indicate that reduction of the gate leakage current by as much as four orders of magnitude was successfully recorded by thermal annealing. And high quality schottky contact with a barrier height of 0.875 eV and the lowest reverse-bias leakage current, respectively, can be obtained under 12 min annealing at 450 ℃ in N2 ambience.

关键词： schottky contact barrier height ideality factor thermal annealing

一维/二维半导体器件肖特基势垒高度的调整方法

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Science Bulletin 2024年第9期69卷 1342-1352页

作者：孟建平李正国李舟 Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of SciencesBeijing 101400China School of Nanoscience and Engineering University of Chinese Academy of SciencesBeijing 100049China Department of Electrical and Computer Engineering National University of SingaporeSingapore 117583Singapore Center for Intelligent Sensors and MEMS National University of SingaporeSingapore 117608Singapore

The schottky contact which is a crucial interface between semiconductors and metals is becoming increasingly significant in nano-semiconductor devices. A schottky barrier, also known as the energy barrier, controls the depletion width and carrier transport across the metal–semiconductor *** or adjusting schottky barrier height(SBH) has always been a vital issue in the successful operation of any semiconductor device. This review provides a comprehensive overview of the static and dynamic adjustment methods of SBH, with a particular focus on the recent advancements in nanosemiconductor devices. These methods encompass the work function of the metals, interface gap states,surface modification, image-lowering effect, external electric field, light illumination, and piezotronic effect. We also discuss strategies to overcome the Fermi-level pinning effect caused by interface gap states, including van der Waals contact and 1D edge metal contact. Finally, this review concludes with future perspectives in this field.

关键词： schottky contact schottky barrier height Adjustment methods One-and two-dimensional semiconductor

Fabrication and characteristics of Ni-germanide schottky contacts with Ge

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Chinese Physics B 2005年第5期14卷 1041-1043页

作者：韩德栋刘晓彦康晋锋夏志良杜刚韩汝琦 InstituteofMicroelectronics PekingUniversityBeijing100871China

In this study, Ni germanide schottky barrier diodes on n-Ge (100) substrate were fabricated by sputtering metal Ni on Ge, followed by annealing in N2 atmosphere from 300 to 500℃ in a furnace. The results of x-ray diffraction (XRD)show that the Ni germanide was formed and the diffraction line of (111) was observed in all samples. The structure of Ni germanide is orthorhombic with lattice parameters a=5.811, b=5.381, c=3.428. However, the lines (121) and (002) were observed only in the samples annealed at a temperature higher than 400℃. The influence of annealing temperature on the electrical properties of Ni germanide schottky barrier diodes on n-Ge (100) substrate was investigated. Experimental results indicated that schottky barrier diodes on n-Ge (100) with current-voltage (I-V) rectifier characteristics were obtained. The Ion/Ioff ratio of the schottky diode obtained by using a 300℃ annealing process is the highest. The schottky barrier heights were evaluated by the capacitance-voltage method.

关键词： nickel germanide schottky contact

Annealing temperature influence on the degree of inhomogeneity of the schottky barrier in Ti/4H–SiC contacts

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Chinese Physics B 2014年第12期23卷 418-422页

作者：韩林超申华军刘可安王弋宇汤益丹白云许恒宇吴煜东刘新宇 Microwave Device and IC Department Institute of Microelectronics Chinese Academy of Sciences Zhuzhou CSR Times Electric Co. Ltd Zhuzhou CSR Times Electric Co. Ltd

Tung＇s model was used to analyze anomalies observed in Ti/Si C schottky contacts. The degree of the inhomogeneous schottky barrier after annealing at different temperatures is characterized by the ‘T0anomaly＇ and the difference（△Φ）between the uniformly high barrier height（Φ0B） and the effective barrier height（Φeff B）. Those two parameters of Ti schottky contacts on 4H–Si C were deduced from I–V measurements in the temperature range of 298 K–503 K. The increase in schottky barrier（SB） height（ΦB） and decrease in the ideality factor（n） with an increase measurement temperature indicate the presence of an inhomogeneous SB. The degree of inhomogeneity of the schottky barrier depends on the annealing temperature, and it is at its lowest for 500-°C thermal treatment. The degree of inhomogeneity of the SB could reveal effects of thermal treatments on schottky contacts in other aspects.

关键词： schottky contact Si C inhomogeneity barrier

Al/Ti/4H-SiC schottky barrier diodes with inhomogeneous barrier heights

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Chinese Physics B 2011年第8期20卷 384-388页

作者：王悦湖张义门张玉明宋庆文贾仁需 School of Microelectronics and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xidian University

This paper investigates the current-voltage （I-V） characteristics of Al/Ti/4H-SiC schottky barrier diodes （SBDs） in the temperature range of 77 K-500 K, which shows that Al/Ti/4H SiC SBDs have good rectifying behaviour. An abnormal behaviour, in which the zero bias barrier height decreases while the ideality factor increases with decreasing temperature （T）, has been successfully interpreted by using thermionic emission theory with Gaussian distribution of the barrier heights due to the inhomogeneous barrier height at the A1/Ti/4H-SiC interface. The effective Richardson constant A＊ = 154 A/cm2 . K2 is determined by means of a modified Richardson plot In（I0/T2） - （qσ）2/2（κT）2 versus q/kT, which is very close to the theoretical value 146 A/cm2 · K2.

关键词： schottky contact 4H-SiC barrier height inhomogeneity temperature

Effect of anode area on the sensing mechanism of vertical GaN schottky barrier diode temperature sensor

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Chinese Physics B 2022年第4期31卷 672-675页

作者： Ji-Yao Du Xiao-Bo Li Tao-Fei Pu Jin-Ping Ao School of Automation and Electrical Engineering Shenyang Ligong UniversityShenyang 110159China Institute of Technology and Science Tokushima UniversityTokushimaJapan

Effect of anode area on temperature sensing ability is investigated for a vertical GaN schottky-barrier-diode *** current-voltage-temperature characteristics are comparable to each other for schottky barrier diodes with different anode areas,excepting the series *** the sub-threshold region,the contribution of series resistance on the sensitivity can be ignored due to the relatively small *** sensitivity is dominated by the current density.A large anode area is helpful for enhancing the sensitivity at the same current *** the fully turn-on region,the contribution of series resistance dominates the ***,a large series resistance degrades the temperature error and linearity,implying that a larger anode area will help to decrease the series resistance and to improve the sensing ability.

关键词： GaN temperature sensor schottky contact vertical diode