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A New Parameter Extraction Method for schottky barrier diodes

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Chinese Journal of Electronics 2019年第3期28卷 497-502页

作者： CHANG Yongming MAO Wei HAO Yue State Key Discipline Laboratory of Wide Band Gap Semiconductor Technologies Department of MicroelectronicsXidian University

A new parameter extraction method for schottky barrier diodes is provided in this *** the current model of schottky barrier diodes is a nonlinear self-consistent equation, the nonlinear inconsistent equations set is composed of nonlinear model equations under different biases. The problem of solving nonlinear inconsistent equations set is transformed into an optimization problem. The global optimal solution of the parameters is obtained by genetic algorithm. Comparing with experimental data, the results indicate that the error of the method proposed by this paper is lower than that of Cheung method.

关键词： schottky barrier diodes Parameter extraction Genetic algorithm

Determination of the series resistance under the schottky contacts of AlGaN/AlN/GaN schottky barrier diodes

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Chinese Physics B 2012年第1期21卷 414-418页

作者： Cao Zhi-Fang Lin Zhao-Jun LŰYuan-Jie Luan Chong-Biao Yu Ying-Xia Chen Hong Wang Zhan-Guo School of Physics Shandong UniversityJinan 250100China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors （HFETs） were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/CaN schottky barrier diodes （SBDs）. Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs, the series resistance under the schottky contacts （Rs） was calculated using the method of power consumption, which has been proved to be valid. Finally, the method of power consumption for calculating RS was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs. It is shown that the series resistance under the schottky contacts cannot be neglected and is important for analysing and characterizing the AIGaN/AIN/GaN SBDs and the AlGaN/AlN/GaN HFETs.

关键词： AlGaN/AlN/GaN heterostructures schottky barrier diodes power consumption seriesresistance

Design and simulation of AlN-based vertical schottky barrier diodes

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Chinese Physics B 2021年第6期30卷 526-530页

作者： Chun-Xu Su Wei Wen Wu-Xiong Fei Wei Mao Jia-Jie Chen Wei-Hang Zhang Sheng-Lei Zhao Jin-Cheng Zhang Yue Hao Key Laboratory of Wide Band-Gap Semiconductors and Devices School of MicroelectronicsXidian UniversityXi'an 710071China China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou 510610China Shanghai Academy of Spaceflight Technology Shanghai 201109China

The key parameters of vertical AlN schottky barrier diodes(SBDs) with variable drift layer thickness(DLT) and drift layer concentration(DLC) are investigated. The specific on-resistance(R_(on,sp)) decreased to 0.5 mΩ · cm^(2) and the breakdown voltage(V_(BR)) decreased from 3.4 kV to 1.1 kV by changing the DLC from 10^(15) cm^(-3) to 3×10^(16) cm^(-3). The VBRincreases from 1.5 kV to 3.4 kV and the Ron,sp also increases to 12.64 mΩ · cm^(2) by increasing DLT from 4-μm to 11-μm. The VBRenhancement results from the increase of depletion region extension. The Baliga's figure of merit(BFOM) of3.8 GW/cm^(2) was obtained in the structure of 11-μm DLT and 10^(16) cm^(-3) DLC without FP. When DLT or DLC is variable,the consideration of the value of BFOM is essential. In this paper, we also present the vertical AlN SBD with a field plate(FP), which decreases the crowding of electric field in electrode edge. All the key parameters were optimized by simulating based on Silvaco-ATLAS.

关键词： aluminum nitride schottky barrier diodes specific on-resistance R_(on sp) breakdown voltage V_(BR)

barrier height and ideality factor dependency on identically produced small Au/p-Si schottky barrier diodes

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Journal of Semiconductors 2010年第7期31卷 16-21页

作者： M.A.Yeganeh S.H.Rahmatollahpur Faculty of Physics Baku State UniversityAcademic Zahid X■lilov ksi-23AZ 1148BakuAzerbaijan Departments of Physics Sharif University of Technology11365-9567TehranIran

Small high-quality Au/P-Si schottky barrier diodes（SBDs） with an extremely low reverse leakage current using wet lithography were *** effective barrier heights（BHs） and ideality factors from current-voltage （Ⅰ-Ⅴ） characteristics were measured by a conducting probe atomic force microscope（C-AFM）.In spite of the identical preparation of the diodes there was a diode-to-diode variation in ideality factor and barrier height *** extrapolating the plots the built in potential of the Au /p-Si contact was obtained as V_（bi）=0.5425 V and the barrier height valueΦ_（b（c-V）） was calculated to beΦ_（B（C-V））=0.7145 V for Au/*** is found that for the diodes with diameters smaller than 100μm,the diode barrier height and ideality factor dependency to their diameters and correlation between the diode barrier height and its ideality factor are nonlinear,where similar to the earlier reported different metal semiconductor diodes in the literature,these parameters for the here manufactured diodes with diameters more than 100μm are also *** on the very obvious sub-nanometer C-AFM produced pictures the scientific evidence behind this controversy is also explained.

关键词： schottky barrier diodes conducting probe-atomic force microscope barrier height and ideality factor

Effect of annealing on the electrical performance of N-polarity GaN schottky barrier diodes

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Journal of Semiconductors 2024年第4期45卷 48-55页

作者： Nuo Xu Gaoqiang Deng Haotian Ma Shixu Yang Yunfei Niu Jiaqi Yu Yusen Wang Jingkai Zhao Yuantao Zhang State Key Laboratory of Integrated Optoelectronics College of Electronic Science and EngineeringJilin UniversityChangchun 130012China

A nitrogen-polarity(N-polarity)GaN-based high electron mobility transistor(HEMT)shows great potential for high-fre-quency solid-state power amplifier applications because its two-dimensional electron gas(2DEG)density and mobility are mini-mally affected by device ***,the schottky barrier height(SBH)of N-polarity GaN is *** leads to a large gate leakage in N-polarity GaN-based *** this work,we investigate the effect of annealing on the electrical characteristics of N-polarity GaN-based schottky barrier diodes(SBDs)with Ni/Au *** results show that the annealing time and tem-perature have a large influence on the electrical properties of N-polarity GaN *** to the N-polarity SBD without annealing,the SBH and rectification ratio at±5 V of the SBD are increased from 0.51 eV and 30 to 0.77 eV and 7700,respec-tively,and the ideal factor of the SBD is decreased from 1.66 to 1.54 after an optimized annealing *** analysis results suggest that the improvement of the electrical properties of SBDs after annealing is mainly due to the reduction of the inter-face state density between schottky contact metals and N-polarity GaN and the increase of barrier height for the electron emis-sion from the trap state at low reverse bias.

关键词： nitrogen polarity GaN schottky barrier diodes annealing interface state

Planar InP-based schottky barrier diodes for terahertz applications

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Journal of Semiconductors 2013年第6期34卷 54-57页

作者：周静涛杨成樾葛霁金智 Institute of Microelectronics Chinese Academy of Sciences

Based on characteristics such as low barrier and high electron mobility of lattice matched In;Ga;As layer,InP-based schottky barrier diodes（SBDs） exhibit the superiorities in achieving a lower turn-on voltage and series resistance in comparison with GaAs *** InP-based SBDs have been developed in this *** show that a low forward turn-on voltage of less than 0.2 V and a cutoff frequency of up to 3.4 THz have been *** key factors of the diode such as series resistance and the zero-biased junction capacitance are measured to be 3.32Ωand 9.1 fF,*** are highly consistent with the calculated *** performances of the InP-based SBDs in this work,such as low noise and low loss,are promising for applications in the terahertz mixer,multiplier and detector circuits.

关键词： schottky barrier diodes terahertz cuttoff frequency

Characterization of ion-implanted 4H-SiC schottky barrier diodes

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Chinese Physics B 2010年第1期19卷 456-460页

作者：王守国张岩张义门张玉明 Department of Electronic and Information Engineering Harbin Institute of Technology Shenzhen Graduate School School of Information Science and Technology Northwest University School of Microelectronics Xidian University

Ion-implantation layers are fabricated by multiple nitrogen ion-implantations （3 times for sample A and 4 times for sample B） into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I-V and C V characteristics of the lateral Ti/4H-SiC schottky barrier diodes （SBDs） fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors （MESFETs）, and SiC static induction transistors （SITs）. The parameters of the diodes are extracted from the forward I-V and C-V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance Rs are 11.9 and 1.0 kf~ respectively. The values of barrier height φB of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I-V method and 1.14 and 0.93 eV obtained by the C-V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2% and 4% respectively extracted from C V testing results.

关键词： silicon carbide ion-implantation schottky barrier diodes barrier height

Analytical model for capacitance-voltage characteristics of ion-implanted 4H silicon carbide schottky barrier diodes

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Journal of Harbin Institute of Technology(New Series) 2011年第6期18卷 44-47页

作者：王守国张岩 Dept.of Electronic and Information Engineering Harbin Institute of Technology(Shenzhen Graduate School) School of Information Science and Technology Northwest University

In order to undertake theory analysis in the application area of switching,frequency and power devices,an analytical model for capacitance-voltage (C-V) characteristics of ion-implanted 4H silicon carbide (SiC) schottky barrier diodes (SBDs) was *** model was established by considering the effects of incomplete ionization of nitrogen in 4H-SiC,the Poole-Frenkel on the ionization energy,and the ion-implanted nitrogen donor *** simulation process is discussed in detail for two multiple nitrogen ion-implanted 4H-SiC SBDs (three and four fold ion-implantations) designed and fabricated in the experiments using this model at different activation *** agreement between the modeled C-V curves and the measured results for two ion-implanted 4H-SiC SBDs fabricated is *** capacitance model has the potential to be used to simulate and design ion-implanted SiC devices concerned in the future.

关键词： silicon carbide capacitance schottky barrier diodes ion implantation

Physical mechanism of field modulation effects in ion implanted edge termination of vertical GaN schottky barrier diodes

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Fundamental Research 2022年第4期2卷 629-634页

作者： Ruiyuan Yin Chiachia Li Bin Zhang Jinyan Wang Yunyi Fu Cheng P.Wen Yilong Hao Bo Shen Maojun Wang School of Integated Circuis Peking UniversityBeijing 100871China Schol of Physics Peking UniversityBejing 10o871China

In this study,the physical properties of F ion-implanted GaN were thoroughly studied,and the related electric-field modulation mechanisms in ion-implanted edge termination were *** electron microscopy *** indicate that the ion-implanted region maintains a single-crystal structure even with the implantation of high-energy F ions,indicating that the high resistivity of the edge termination region is not induced by ***,ion implantation-induced deep levels could compensate the electrons and lead to a highly resistive layer In addition to the bulk ffect,the direct bombardment of high-energy F ions resulted in a rough and nitrogen-deficient surface,which was confirmed via atomic force microscopy(AFM)and X-ray photoelectron spectroscopy,The implanted surface with a large density of nitrogen vacancies can accommodate electrons,and it is more conductive than the bulk in the implanted region,which is validated via spreading resistance profiling and conductive AFM *** reverse bias,the implanted surface can spread the potential in the lateral direction,whereas the acceptor traps capture electrons acting as space charges,shifting the peak electric field into the bulk region in the vertical *** a result,the schottky barrier diode terminated with high-energy F ion-implanted regions exhibits a breakdown voltage of over 1.2 kv.

关键词： lon implantation Edge termination Electri field modulationeffect GaN schottky barrier diodes