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spintronics in Two-Dimensional Materials

Nano-Micro Letters 2020年第7期12卷 192-217页

作者： Yanping Liu Cheng Zeng Jiahong Zhong Junnan Ding Zhiming MWang Zongwen Liu School of Physics and Electronics Hunan Key Laboratory for Super-Microstructure and Ultrafast ProcessCentral South University932 South Lushan RoadChangsha 410083HunanPeople’s Republic of China Shenzhen Research Institute of Central South University A510aVirtual University BuildingSouthern DistrictHigh-Tech Industrial ParkYuehai StreetNanshan DistrictShenzhenPeople’s Republic of China State Key Laboratory of High-Performance Complex Manufacturing Central South University932 South Lushan RoadChangsha 410083HunanPeople’s Republic of China Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of ChinaChengdu 610054People’s Republic of China School of Chemical and Biomolecular Engineering The University of SydneySydneyNSW 2006Australia

spintronics,exploiting the spin degree of electrons as the information vector,is an attractive field for implementing the beyond Complemetary metal-oxide-semiconductor(CMOS)***,two-dimensional(2D)materials have been drawing tremendous attention in spintronics owing to their distinctive spin-dependent properties,such as the ultralong spin relaxation time of graphene and the spin-valley locking of transition metal ***,the related heterostructures provide an unprecedented probability of combining the di erent characteristics via proximity e ect,which could remedy the limitation of individual 2D ***,the proximity engineering has been growing extremely fast and has made significant achievements in the spin injection and ***,there are still challenges toward practical application;for example,the mechanism of spin relaxation in 2D materials is unclear,and the high-effciency spin gating is not yet *** this review,we focus on 2D materials and related heterostructures to systematically summarize the progress of the spin injection,transport,manipulation,and application for information storage and *** also highlight the current challenges and future perspectives on the studies of spintronic devices based on 2D materials.

关键词： spintronics 2D materials TMDCs Heterostructure Proximity effect

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Reactively sputtered Fe_3 O_4 -based films for spintronics

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Chinese Physics B 2013年第4期22卷 17-31页

作者：李鹏金朝米文博白海力 Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology Institute of Advanced Materials Physics Faculty of Science Tianjin University

Half metallic polycrystalline, epitaxial Fe3O4 films and Fe3O4 -based heterostructures for spintronics were fabricated by DC reactive magnetron sputtering. Large tunneling magnetoresistance was found in the polycrystalline Fe3O4 films and attributed to the insulating grain boundaries. The pinning effect of the moments at the grain boundaries leads to a significant exchange bias. Frozen interfacial/surface moments induce weak saturation of the high-field magnetoresistance. The films show a moment rotation related butterfly-shaped magnetoresistance. It was found that in the films, natural growth defects, antiphase boundaries, and magnetocrystalline anisotropy play important roles in high-order anisotropic magnetoresistance. Spin injection from Fe3O4 films to semiconductive Si and ZnO was measured to be 45% and 28.5%, respectively. The positive magnetoresistance in the Fe3O4 -based heterostructures is considered to be caused by a shift of the Fe3O4 e g ↑ band near the interface. Enhanced magnetization was observed in Fe3O4 /BiFeO 3 heterostructures experimentally and further proved by first principle calculations. The enhanced magnetization can be explained by spin moments of the thin BiFeO 3 layer substantially reversing into a ferromagnetic arrangement under a strong coupling that is principally induced by electronic orbital reconstruction at the interface.

关键词： reactively sputtered Fe3O4 films spintronics magnetoresistance interface

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Spin-dependent balance equations in spintronics

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Chinese Physics B 2018年第1期27卷 460-466页

作者：王正川 Department of Physics and CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of Sciences

It is commonly known that the hydrodynamic equations can be derived from the Boltzmann equation. In this paper, we derive similar spin-dependent balance equations based on the spinor Boltzmann equation. Besides the usual charge current, heat current, and pressure tensor, we also explore the characteristic spin accumulation and spin current as well as the spin-dependent pressure tensor and heat current in spintronics. The numerical results of these physical quantities are demonstrated using an example of spin-polarized transport through a mesoscopic ferromagnet.

关键词： spin-dependent balance equations spinor Boltzmann equation spintronics spin current

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Noncollinear spintronics and electric-field control:a review

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Rare Metals 2020年第2期39卷 95-112页

作者： Pei-Xin Qin Han Yan Xiao-Ning Wang Ze-Xin Feng Hui-Xin Guo Xiao-Rong Zhou Hao-Jiang Wu Xin Zhang Zhao-Guo-Gang Leng Hong-Yu Chen Zhi-Qi Liu School of Materials Science and Engineering Beihang UniversityBeijing100191China

Our world is composed of various materials with different structures,where spin structures have been playing a pivotal role in spintronic devices of the contemporary information *** from conventional collinear spin materials such as collinear ferromagnets and collinear antiferromagnetic ally coupled materials,noncollinear spintronic materials have emerged as hot spots of research attention due to exotic physical *** this review,we first introduce two types of noncollinear spin structures,i.e.,the chiral spin structure that yields real-space Berry phases and the coplanar noncollinear spin structure that could generate momentum-space Berry phases,and then move to relevant novel physical phenomena including topological Hall effect,anomalous Hall effect,multiferroic,Weyl fermions,spin-polarized current and spin Hall effect without spin-orbit coupling in these noncollinear spin ***,we summarize and elaborate the electric-field control of the noncollinear spin structure and related physical effects,which could enable ultralow power spintronic devices in *** the final outlook part,we emphasize the importance and possible routes for experimentally detecting the intriguing theoretically predicted spin-polarized current,verifying the spin Hall effect in the absence of spin-orbit coupling and exploring the anisotropic magnetoresistance and domain-wall-related magnetoresistance effects for noncollinear antiferromagnetic materials.

关键词： Noncollinear spintronics Chiral spin texture Coplanar noncollinear spin texture Electric-field control Spintronic devices

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Silicene spintronics——A concise review

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Chinese Physics B 2015年第8期24卷 56-66页

作者：王洋洋屈贺如歌俞大鹏吕劲 State Key Laboratory for Mesoscopic Physics and School of Physics Peking University Department of Nuclear Science and Engineering and Department of Materials Science and Engineering Massachusetts Institute of TechnologyCambridge Academy for Advanced Interdisciplinary Studies Peking University State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications School of Science Beijing University of Posts and Telecommunications Collaborative Innovation Center of Quantum Matter

spintronics involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. The fascinating spin-resolved properties of graphene motivate numerous researchers to study spintronics in graphene and other two-dimensional(2D) materials. Silicene, the silicon analog of graphene, is considered to be a promising material for spintronics. Here, we present a review of theoretical advances with regard to spin-dependent properties, including the electric field- and exchange field-tunable topological properties of silicene and the corresponding spintronic device simulations.

关键词： silicene spintronics spin-filter spin field effect transistor topological property

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Progress in organic spintronics

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Chinese Physics B 2014年第5期23卷 9-26页

作者：杨福江韩士轩解士杰 School of Physics State Key Laboratory of Crystal MaterialsShandong University

Recent progress in organic spintronics is given an informative overview, covering spin injection, detection, and trans-port in organic spin valve devices, and the magnetic field effect in organic semiconductors （OSCs）. In particular, we focus on our own recent work in spin injection and the organic magnetic field effect （OMFE）.

关键词： organic material spintronics spin injection organic magnetic field effect

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YN2 monolayer： Novel p-state Dirac half metal for high-speed spintronics

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Nano Research 2017年第6期10卷 1972-1979页

作者： Zhifeng Liu Junyan Liu Jijun Zhao School of Physical Science and Technology Inner Mongolia University Hohhot 010021 China Beijing Computational Science Research Center Beijing 100094 China Key Laboratory of Materials Modification by Laser Ion and Electron Beams Dalian University of Technology Dalian 116024 China

In spintronics, it is highly desirable to find new materials that can simultaneously possess complete spin-polarization, high-speed conduction electrons, large Curie temperature, and robust ferromagnetic ground states. Using first-principles calculations, we demonstrate that the stable YN2 monolayer with octahedral coordination is a novel p-state Dirac half metal （DHM）, which not only has a fully spin-polarized Dirac state, but also the highest Fermi velocity （3.74×10^5 m/s） of the DHMs reported to date. In addition, its half-metallic gap of 1.53 eV is large enough to prevent the spin-flip transition. Because of the strong nonlocal p orbitals of N atoms （N-p） direct exchange interaction, the Curie temperature reaches over 332 K. Moreover, its ferromagnetic ground state can be well preserved under carrier doping or external strain. Therefore, the YN2 monolayer is a promising DHM for high-speed spintronic devices and would lead to new opportunities in designing other p-state DHMs.

关键词： spintronics Dirac half metalYN2 monolayer ferromagnetism

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Topological insula tor: spintronics and quantum computations

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Frontiers of physics 2019年第4期14卷 5-20页

作者： Mengyun He Huimin Sun Qing Lin He International Center for Quantum Materials School of Physics Peking University Beijing 100871 China CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of Sciences Beijing 100190 China

Topological insulators are emergent states of quantum matter that are gapped in the bulk with timereversal symmetry-pteserved gapless edge/surface states, adiabatically distinct from conventional mat erials. By proximity to various magnets and superconductors, to pological insula tors show novel physics at the interfaces, which give rise to two new areas named topological spintronics and topological quantum compu tat ion. Effects in the former such as the spin to rques, spin-charge conversion, to pological antiferromagnetic spintronics, and skyrmions realized in topological systems will be addressed. In the latter, a superconducting pairing gap leads to a state that supports Majorana fermions states, which may provide a new path for realizing to pological quantum comp ut at ion. Various signa tu res of Majorana zero modes/edge mode in topological superconductors will be discussed. The review ends by outlooks and potential applications of topological insulators. Topological superconductors that are fabricated using topological insulators with superconductors have a full pairing gap in the bulk and gapless surface states consisting of Majorana fermions. The theory of topological superconductors is reviewed, in close analogy to the theory of topological insulators.

关键词： topological insulator Majorana fermion topological spintronics topological superconductor

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Dirac spin-gapless semiconductors:promising platforms for massless and dissipationless spintronics and new(quantum) anomalous spin Hall effects

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National Science Review 2017年第2期4卷 252-257页

作者： Xiao-Lin Wang Spintronic and Electronic Materials Group Institute for Superconducting and Electronic MaterialsAustralian Institute for Innovative MaterialsUniversity of Wollongong

It is proposed that the new generation of spintronics should be ideally massless and dissipationless for the realization of ultra-fast and ultra-low-power spintronic devices. We demonstrate that the spin-gapless materials with linear energy dispersion are unique materials that can realize these massless and dissipationless states. Furthermore, we propose four new types of spin Hall efects that consist of spin accumulation of equal numbers of electrons and holes having the same or opposite spin polarization at the sample edge in Hall efect measurements, but with vanishing Hall voltage. hese new Hall efects can be classiied as(quantum) anomalous spin Hall efects. he physics for massless and dissipationless spintronics and the new spin Hall efects are presented for spin-gapless semiconductors with either linear or parabolic dispersion. New possible candidates for Dirac-type or parabolic-type spin-gapless semiconductors are proposed in ferromagnetic monolayers of simple oxides with either honeycomb or square latices.

关键词： spintronics spin-gapless materials spin Hall efects

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Carbon-based spintronics

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Science China(Physics,Mechanics & Astronomy) 2013年第1期56卷 207-221页

作者： CHEN Peng ZHANG GuangYu Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of Sciences

Carbon-based spintronics refers mainly to the spin injection and transport in carbon materials including carbon nanotubes,graphene,fullerene,and organic *** the last decade,extraordinary development has been achieved for carbon-based spintronics,and the spin transport has been studied in both local and nonlocal spin valve devices.A series of theoretical and experimental studies have been done to reveal the spin relaxation mechanisms and spin transport properties in carbon materials,mostly for graphene and carbon *** this article,we provide a brief review on spin injection and transport in graphene,carbon nanotubes,fullerene and organic thin films.

关键词： carbon spintronics spin injection spin transport spin valve

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