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Fabrication of electrically contacted plasmonic Schottky nanoantennas on silicon

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Chinese Optics Letters 2018年第5期16卷 27-32页

作者： Mohammad Alavirad Anthony Olivieri Langis Roy Pierre Berini Department of Electronics Carleton University Centre for Research in Photonics University of Ottawa Department of Electrical Computer and Software EngineeringUniversity of Ontario Institute of Technology School of Electrical Engineering and Computer Science University of Ottawa Department of Physics University of Ottawa

We fabricate Schottky contact photodetectors based on electrically contacted Au nanoantennas on p-si for the plasmonic detection of sub-bandgap photons in the optical communications wavelength range. Based on a physical model for the internal photoemission of hot carriers, photons coupled onto the Au nanoantennas excite resonant plasmons, which decay into energetic ＂hot＂ holes emitted over the Schottky barrier at the Au/p-si interface, resulting in a photocurrent. In our device, the active Schottky area consists of Au/p-si contact and is very small, whereas the probing pad for external electrical interconnection is larger but consists of Au/Ti/p-si contact having a comparatively higher Schottky barrier, thus producing negligible photo and dark currents.We describe fabrication that involves an electron-beam lithography step overlaid with photolithography. This highly compact component is very promising for applications in high-density si photonics.

关键词： si Ti Fabrication of electrically contacted plasmonic Schottky nanoantennas on silicon

Predicting Physical Properties of Tetragonal,Monoclinic and Orthorhombic M_3N_4(M=C,si,Sn) Polymorphs via First-Principles Calculations

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Chinese Physics Letters 2016年第6期33卷 90-94页

作者：仓玉萍连帅彬杨慧明陈东 College of Physics and Electronic Engineering Xinyang Normal University

The recently discovered tetragonal, monoclinie and orthorhombic polymorphs of M3N4 （M=C, si, Sn） are in- vestigated by using first-principles calculations. A set of anisotropic elastic quantities, i.e., the bulk and shear moduli, Young＇s modulus, Poisson ratio, H/G ratio and rickets hardness of M3N4 （M=C, si, Sn） are predicted. The quasi-harmonic Debye model, assuming that the solids are isotopic, may lead to large errors for the non-cubic crystals. The thermal effects are obtained by the traditional quasi-harmonic approach. The dependences of heat capacity, thermal expansion coefficient and Debye temperature on temperature and pressure are systematically discussed in the pressure range of 0 IOGPa and in the temperature range of 0-1100 K. More importantly, o- C3N4 is a negative thermal expansion material. Our results may have important consequences in shaping the understanding of the fundamental properties of these binary nitrides.

关键词： si M=C,si,Sn on of Predicting Physical Properties of Tetragonal,Monoclinic and Orthorhombic M3N4 M Polymorphs via First-Principles Calculations that in is

External quantum efficiency-enhanced Pt si Schottky-barrier detector utilizing plasmonic ZnO:Al nanoparticles and subwavelength gratings

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Chinese Optics Letters 2016年第7期14卷 14-18页

作者：康冰心蔡毅王岭雪 School of Optoelectronics Beijing Institute of Technology Key Laboratory of Photoelectronic Imaging Technology and Systems Beijing Engineering Research Centre for Mixed Reality and Advanced Display Technology

A infrared light trapping structure combining front subwavelength gratings and rear ZnO：Al nanoparticles for a Ptsi Schottky-barrier detector over a 3-5 μm waveband is theoretically investigated. By selecting the proper plasmonic material and optimizing the parameters for the proposed structure, the absorption of the Ptsi layer is dramatically improved. The theoretical results show that this improvement eventually translates into an equivalent external quantum efficiency （EQE） enhancement of 2.46 times at 3-3.6 μm and 2.38 times at 3.6-5 μm compared to conventional structures. This improvement in the EQE mainly lies in the increase of light path lengths witifin the Ptsi layer by the subwavelength grating diffraction and nanoparticle-scattering effects.

关键词： Pt si External quantum efficiency-enhanced Pt si Schottky-barrier detector utilizing plasmonic ZnO Al SBD

Effects of Grain Boundary Barrier in ZnO/si Heterostructure

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Chinese Physics Letters 2009年第11期26卷 164-167页

作者：刘秉策刘磁辉傅竹西易波 Department of Physics University of Science and Technology of China Hefei 230026

电的障碍上的 ZnO 微观结构的影响用电容电压(C V ) 被调查，当前电压(我 V ) 并且深水平短暂光谱学(DLTS ) 大小。在 DLTS 在 ZnO 电影获得的 Ec 0.24 eV 定位的一个深水平中心是与 Zni 有关的一个内在的缺点。在有从 Zni 缺点捕获电... 详细信息

电的障碍上的 ZnO 微观结构的影响用电容电压(C V ) 被调查，当前电压(我 V ) 并且深水平短暂光谱学(DLTS ) 大小。在 DLTS 在 ZnO 电影获得的 Ec 0.24 eV 定位的一个深水平中心是与 Zni 有关的一个内在的缺点。在有从 Zni 缺点捕获电子的领受人行为的 ZnO 谷物的表面状态导致谷物障碍的形成。另外，我们发现当前的运输被谷物障碍在在 600 点退火以后统治 ?? 攠慬瑳捩 ??  ?

关键词： ZnO薄膜异质结构深能级瞬态谱屏障晶界 si 电流电压微观结构

Transient Hole Trapping in Individual Gesi Quantum Dot Grown on si（001） Studied by Conductive Atomic Force Microscopy

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Chinese Physics Letters 2008年第12期25卷 4360-4363页

作者：吴荣林健晖张生利杨鸿斌蒋最敏杨新菊 Surface Physics Laboratory (National Key Laboratory) Fudan University Shanghai 200433

在 si 底层上种的单个自我装配的 Gesi 量点的电的性质被在房间温度使用传导性的原子力量显微镜学调查。由控制偏爱电压扫在某个快打扫率范围，一座新奇当前的山峰在量点的当前的电压特征被观察。当前的山峰在向后的电压期间仅仅是可检... 详细信息

在 si 底层上种的单个自我装配的 Gesi 量点的电的性质被在房间温度使用传导性的原子力量显微镜学调查。由控制偏爱电压扫在某个快打扫率范围，一座新奇当前的山峰在量点的当前的电压特征被观察。当前的山峰在向后的电压期间仅仅是可检测的立即扫在以后一向前扫。当前的山峰位置和紧张被发现强烈取决于电压打扫条件。这种当前的电压特征在下面快扫与以前测量的量点的平常的稳定的州的当前的行为很不同。这现象的起源能被归因于在在本国的氧化物层和底部 si 底层之间夹的量点很好形成的潜力套住的短暂的洞。

关键词：原子 Gesi si 量子论物理学

Ordering of the α-Fe(si) Crystallization Phase in Annealed Fe_(73.5)Cu_1Mo_3si_(13.5)B_9 Alloy

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Journal of Materials Science & Technology 1997年第1期13卷 37-40页

作者： Jianhua LIU Xiangyi ZHANG and Yangzeng ZHENG (Dept. of Materials Engineering, Yanshan University, Qinhuangdao 066004, China)Jinhua ZHAO and Riping LIU (Institute of Physics, Chinese Academy of Sciences , Beijing 100080, China)(Present address: Institute Dept. of Materials Engineering Yanshan University Qinhuangdao 066004 China Institute of Physics Chinese Academy of Sciences Beijing 100080 China

The ordering of the α-Fe(si) crystallization phase in annealed Fe73.5Cu1Mo3si13.5B9 alloy has been studied using XRD method. The α-Fe(si) phase in Fe73.5Cu1Mo3si13.5B9 alloy annealed at 460℃ for 1 h consists of the DO3-type ordered region with spherical shape and disordered region. The size of DO3 ordered region increases with the annealing temperature. When the annealing temperature is 560℃, the size of the ordered region in the α-Fe(si) grain is 14.0nm,which is nearly as large as that of the α-Fe(si) grain (14.2 nm) and the degree of order of the α-Fe(si) phase is about 0.78. When Fe73.5Cu1 Mo3si13.5B9 amorphous alloy is annealed at 520℃， with the increment of the annealing time, the shape of the DO3 ordered region in the α-Fe(si) phase is spheroidal at the beginning of the annealing and becomes spherical and has asize of 12.8 nm when the annealing time is 60 min. In addition, the DO3 superlattice lines of the α-Fe(si) phase will vanish if Fe73.5Cu1Mo3si13.5 B9 amorphous alloy is annealed for 1 h at 750℃.

关键词： Crystallization Phase in Annealed Fe Cu1Mo3si Ordering of the B9 Alloy si Mo

Electromagnetic Filtration of Primary Fe-Rich Phases from Al-si Alloy Melt

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Journal of Materials Science & Technology 2001年第3期17卷 306-310页

作者： Zhenming XU, Tianxiao LI, Da SHU and Yaohe ZHOU School of Materials Science and Engineering, Shanghai Jiaotong University, Shanghai 200030, China E-mail: zmxu@*** Sch. of Mat. Sci. and Eng. Shanghai Jiaotong Univ. Shanghai 200030 China

Electromagnetic filtration of primary Fe-rich phases (complex compound of AlFesiMn) from Al-si alloy melt containing 1.2 wt pct Fe have been studied by theoretical analysis and on a self-designed electromagnetic filtration equipment. The principle of the electromagnetic filtration is that the EMF (electromagnetic force) scarcely acts on the primary Fe-rich phases having low electric conductivity, which are then moved in the direction opposite to that of the EMF. Experimental results show that the primary Fe-rich phases are separated from Al-si alloy melt and are collected in the filter while the melt is in horizontal flow. The removal efficiency of the primary iron-phases (77) calculated is less as the greatest flow velocity of the melt (UM) and the height of the filter (2h) are larger, while it becomes larger as EMF, operating distance of electromagnetic force (cr) and particle size (dv) become larger. It has been confirmed that the primary iron-phases larger than 20 jim can be removed efficiently by theoretical analysis and experiments. This new technique is high efficient and available for continuously flowing melts as compared with natural settling and filtration methods, which offer a possibility for recycling high quality aluminum alloys.

关键词： Fe Al Electromagnetic Filtration of Primary Fe-Rich Phases from Al-si Alloy Melt si

Reduction of Dislocations in GaN Epilayer Grown on si （111） Substrates using a GaN Intermedial Layer

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Chinese Physics Letters 2006年第9期23卷 2591-2594页

作者：王建峰张宝顺张纪才朱建军王玉田陈俊刘卫江德生姚端正杨辉 Department of Physics Wuhan University Wuhan 430072 Institute of Semiconductors Chinese Academy of Sciences Beijing 100083

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.

关键词： CHEMICAL-VAPOR-DEPOsiTION HIGH-QUALITY GAN ALN BUFFER LAYER NUCLEATIONLAYER PHASE EPITAXY EVOLUTION DENsiTY siLICON STRESS si

siO₂/Al₂O₃ RATIO OF HYDRATED SODIUM ALUMINOsiLICATE IN ALUMINA PRODUCTION

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中国有色金属学会会刊：英文版 1997年第2期7卷 44-47页

作者： Deng, Hongmei Zeng, Wenming Chen, Nianyi Chinese Acad of Sciences Shanghai China

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关键词： hydrated sodium aluminosilicate hydroxy sodalite si atom vacancy