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The development of semiconductor detectors for radiometers of alpha‑radiation and the examination of the volumetric activity of radon in various areas

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Radiation Detection Technology and Methods 2023年第3期7卷 457-463页

作者： B.S.Radzhapov S.A.Radzhapov F.G.Mullagalieva M.A.Zufarov Physical-Technical Institute of Scientific Association of“Physics-Sun” Chingiz Aytmatov Str.2 B100084 TashkentUzbekistan Institute of Materials Science Scientific Association of“Physics-Sun”Uzbekistan Academy of Sciences Parkent102226 TashkentUzbekistan

Purpose Development of highly sensitive semiconductor detectors of large diameter and manufacturing of a measuring complex—a radiometer based on the developed detectors for studying the activity of alpha particles and the volumetric activity of radon in various *** The detectors were manufactured using surface-barrier and heterojunction *** etchant formulations for silicon have been *** obtain plane-parallelism of the plates during chemical etching,a special dynamic setup was *** structure of the radiometer,electrical circuits,and device software have been *** The results of the development of technology for the manufacture of detectors of large dimensions(30-100 mm in diameter)are *** of the electrical and radiometric characteristics of surface-barrier n detectors and detectors based on Al-αGe-pSi-Au heterojunctions were carried *** principle of operation of the electronic components of a radiometer made using these detectors is also *** The data of monitoring of radon content in soil air are *** results showed that the concentration varies depending on temperature,humidity,and time of *** GSM/SMS module allows the device to operate in real time.

关键词： Silicon semiconductor detectors Radiometer Alpha-radiation Heterojunction

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Low-noise and low-power pixel sensor chip for gas pixel detectors

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Nuclear Science and Techniques 2024年第3期35卷 142-152页

作者： Zhuo Zhou Shi-Qiang Zhou Dong Wang Xiang-Ming Sun Chao-Song Gao Peng-Zhen Zhu Wei-Ping Ren Jun Liu Mu-Xian Li Chen Lian Chun-Lai Dong PLAC Key Laboratory of Quark and Lepton Physics(MOE)Central China Normal UniversityWuhan 430079China

Topmetal-M2 is a large-area pixel sensor chip fabricated using the GSMC 130 nm CMOS process in *** pixel array of Topmetal-M2 consists of pixels of 400 rows×512 columns with a pixel pitch of 45μm×45μ*** array is divided into 16 subarrays,with pixels of 400 rows×32 columns per *** pixel incorporates two charge sensors:a diode sensor and a Topmetal *** in-pixel circuit primarily consists of a charge-sensitive amplifier for energy measurements,a discriminator with a peak-holding circuit,and a time-to-amplitude converter for time-of-arrival *** pixel of Topmetal-M2 has a charge input range of~0-3 k e-,a voltage output range of~0-180 mV,and a charge-voltage conversion gain of~59.56μV∕e-.The average equivalent noise charge of Topmetal-M2,which includes the readout electronic system noise,is~43.45 e-.In the scanning mode,the time resolution of Topmetal-M2 is 1 LSB=1.25μs,and the precision is^()7.41μ*** an operating voltage of 1.5 V,Topmetal-M2 has a power consumption of~49 mW∕cm~*** this article,we provide a comprehensive overview of the chip architecture,pixel working principles,and functional behavior of ***,we present the results of preliminary tests conducted on Topmetal-M2,namely,alpha-particle and soft X-ray tests.

关键词： Charge collection Gas detectors semiconductor detectors X-ray detectors

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