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Chinese Physics B 2023年第5期32卷 604-609页

作者：赵永春朱铭鑫李胜世李萍 School of Physics and Technology University of JinanJinan 250022China Institute of Spintronics University of JinanJinan 250022China

The quantum anomalous Hall(QAH) effect has attracted enormous attention since it can induce topologically protected conducting edge states in an intrinsic insulating material. For practical quantum applications, the main obstacle is the non-existent room temperature QAH systems, especially with both large topological band gap and robust ferromagnetic order. Here, according to first-principles calculations, we predict the realization of the room temperature QAH effect in a two-dimensional(2D) honeycomb lattice, RuCS_(3) with a non-zero Chern number of C = 1. Especially, the nontrivial topology band gap reaches up to 336 me V for RuCS_(3). Moreover, we find that RuCS_(3) has a large magnetic anisotropy energy(2.065 me V) and high Curie temperature(696 K). We further find that the non-trivial topological properties are robust against the biaxial strain. The robust topological and magnetic properties make RuCS_(3) have great applications in room temperature spintronics and nanoelectronics.

关键词： quantum anomalous Hall(QAH)effect room temperature magnetic anisotropy energy topological properties first-principles calculations

room temperature non-balanced electric bridge ethanol gas sensor based on a single ZnO microwire

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Chinese Physics B 2020年第1期29卷 463-468页

作者： Yun-Zheng Li Qiu-Ju Feng Bo Shi Chong Gao De-Yu Wang Hong-Wei Liang School of Physics and Electronic Technology Liaoning Normal UniversityDalian 116029China School of Microelectronics Dalian University of TechnologyDalian 116024China

In this paper,ultra-long and large-scaled ZnO microwire arrays are grown by the chemical vapor deposition method,and a single ZnO microwire-based non-balanced electric bridge ethanol gas sensor is *** experimental results show that the gas sensor has good repeatability,high response rate,short response,and recovery time at room temperature(25℃).The response rate of the gas sensor exposed to 90-ppm ethanol is about 93%,with a response time and recovery time are 0.3 s and 0.7 s *** a contrast,the traditional resistive gas sensor of a single ZnO microwire shows very small gas response ***,ethanol gas sensor based on non-balanced electric bridge can obviously enhance gas sensing characteristics,which provides a feasible method of developing the high performance ZnO-based gas sensor.

关键词： ZnO microwire gas sensor room temperature ethanol

room temperature growth of CsPbBr_(3) single crystal for asymmetric MSM structure photodetector

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Journal of Materials Science & Technology 2024年第20期187卷 113-122页

作者： Longxing Su International School of Microelectronics Dongguan University of TechnologyDongguan 523808China

UV-visible broadband light harvesting ability is critical for photodetectors,and all inorganic perovskite CsPbBr_(3)is regarded as a promising candidate as the response active ***,a saturated-solution crystallization method is employed to synthesize CsPbBr_(3)single ***-dependent photo-luminescence spectra with one-photon and two-photon excitation are systematically investigated,deter-mining a large exciton binding energy of 39.8 *** allows the stable excitonic emission of CsPbBr_(3)single crystal at room ***,an asymmetric structure CsPbBr_(3)photodetector is fab-ricated by using InGa alloy as the Ohmic electrode and Au as the Schottky ***-8 V,the device exhibits a prominent response to the irradiation from UV to green band with a maximum responsiv-ity of 2.56 A/W,an external quantum efficiency of 580%,and a detectivity of 1.24×10^(13) Hz1/2 W−*** addition,the CsPbBr_(3)photodetector also presents rapid response speeds at both reverse and forward bias voltages and self-powered characteristics owing to the Schottky depletion layer underneath the Au *** demonstration of asymmetric metal-semiconductor-metal(MSM)structure photodetector presents a promising pathway toward next-generation CsPbBr_(3)optoelectronic devices.

关键词： room temperature CsPbBr_(3) Single crystal Asymmetric Photodetector

room temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced CVD

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Plasma Science and Technology 2007年第2期9卷 177-180页

作者：郭玉张溪文韩高荣 Department of Materials Science and Engineering Silicon State Key Lab.Zhejiang UniversityHangzhou 310027China

Hydrogenated amorphous silicon （a-Si： H） films were deposited on Si （100） and glass substrates by dielectric barrier discharge enhanced chemical vapour deposition （DBD-CVD） in （SiH4＋H2） atmosphere at room temperature. Results of the thickness measurement, SEM （scanning electron microscope）, Raman, and FTIR （Fourier transform infrared spectroscopy） show that with the increase in the applied peak voltage, the deposition rate and network order of the films increase, and the hydrogen bonding configurations mainly in di-hydrogen （Si-H2） and poly hydrogen （SiH2）n are introduced into the films. The UV-visible transmission spectra show that with the decrease in SiH4/ （SiHn＋H2） the thin films＇ band gap shifts from 1.92 eV to 2.17 eV. These experimental results are in agreement with the theoretic analysis of the DBD discharge. The deposition of a-Si： H films by the DBD-CVD method as reported here for the first time is attractive because it allows fast deposition of a-Si： H films on large-area low-melting-point substrates and requires only a low cost of production without additional heating or pumping equipment.

关键词： DBD-CVD room temperature hydrogenated amorphous silicon films

room temperature Modulated Structure of Ca and K co-Doped LaMnO_3

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Chemical Research in Chinese Universities 2012年第5期28卷 784-787页

作者： HOU Chang-min HUANG Ke-ke HU Bin YUAN Hong-ming FENG Shou-hua State Key Laboratory of Inorganic Synthesis and Preparative Chemistry College of ChemistryJilin UniversityChangehun 130012R R.China

A series of perovskite compounds of La1-x-yCaxKyMnO3 was prepared by hydrothermal disproportionation reaction of MnO2. The three oxidation states of manganese（Mn3＋, Mn4＋ and Mn5＋） can stably exist in the compounds. Under room temperature conditions, twice and three times modulated structure produced by the charge ordering can be observed by X-ray diffraction（XRD）, select area electron diffraction（SAED） and high resolution transmission electron microscopy（HR-TEM）. The splits of the diffraction peaks of the single crystals confirmed by synchrotron X-ray diffraction experiment are in accordance with those of the powder sample. The existence of the different oxidation states of Mn3＋, Mn4＋ and Mn5＋ can be considered to be the dominating reason of the complicated room temperature modulated structure.

关键词： Modulated structure Mixed valence state room temperature

Gas-discharge induced flash sintering of YSZ ceramics at room temperature

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Journal of Advanced Ceramics 2022年第4期11卷 603-614页

作者： Yuchen ZHU Hongyang ZHOU Rongxia HUANG Nianping YAN Xilin WANG Guanghua LIU Zhidong JIA Engineering Laboratory of Power Equipment Reliability in Complicated Coastal Environments Tsinghua Shenzhen International Graduate SchoolTsinghua UniversityShenzhen 518055China School of Electromechanical Engineering Guangdong University of TechnologyGuangzhou 510006China State Grade Jiangxi Electric Power Research Institute Nanchang 330000China State Key Laboratory of New Ceramics and Fine Processing Tsinghua University School of Materials Science and TechnologyTsinghua UniversityBeijing 100084China

This is the first study to conduct the flash sintering of 3 mol%yttria-stabilized zirconia(3YSZ)ceramics at room temperature(25℃)under a strong electric field,larger than 1 kV/*** the standard atmospheric pressure(101 kPa),the probability of successful sintering is approximately half of that at low atmospheric pressure,lower than 80 *** success of the proposed flash sintering process was determined based on the high electric arc performance at different atmospheric pressures ranging from 20 to 100 *** 3YSZ samples achieved a maximum relative density of 99.5%with a grain size of~200 *** results showed that as the atmospheric pressure decreases,the onset electric field of flash sintering decreases,corresponding to the empirical formula of the flashover ***,flash sintering was found to be triggered by the surface flashover of ceramic samples,and the electric arc on the sample surfaces floated upward before complete flash sintering at overly high pressures,resulting in the failure of flash *** study reveals a new method for the facile preparation of flash-sintered ceramics at room temperature,which will promote the application of flash sintering in the ceramic industry.

关键词： flash sintering yttria-stabilized zirconia(YSZ) room temperature flashover AC field low atmospheric pressure

Loading uniform Ag_(3)PO_(4)nanoparticles on three-dimensional peony-like WO_(3)for good stability and excellent selectivity towards NH_(3)at room temperature

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Chinese Physics B 2023年第8期32卷 251-259页

作者：邵星炎贾福超刘婷婷刘健诚王小梅尹广超吕娜周通 Ramachandran Rajan 刘波 Laboratory of Functional Molecules and Materials School of Physics and Optoelectronic EngineeringShandong University of TechnologyZibo 255000China School of Material Science and Engineering Shandong University of TechnologyZibo 255000China Provincial Key Laboratory of Network Based Intelligent Computing University of JinanJinan 250022China Translational Medical Center Zibo Central HospitalZibo 255036China

A heterojunction structure design is a very good method for improving the properties of semiconductors in many research *** method is employed in the present study to promote the gas-sensing performance of Ag_(3)PO_(4)nanocomposites at room temperature(25℃).A nanocomposite of Ag_(3)PO_(4)nanoparticles and three-dimensional peony-like WO_(3)(WO_(3)/Ag_(3)PO_(4))was successfully prepared by the precipitation *** crystalline phases were analyzed by xray diffraction and the microstructure was characterized by scanning electron microscopy and transmission electron *** chemical bonding states were analyzed by x-ray photoelectron *** gas-sensing performance of WO_(3)/Ag_(3)PO_(4)sensors was systematically explored at room *** composite sensors possessed a higher response and lower detection limit(1 ppm)to NH_(3)than those made of a single type of material;this is ascribed to the synergistic effect achieved by the heterojunction *** the different composite sensors tested,gas sensor A5W5(Ag_(3)PO_(4):WO3mass ratio of 5:5)displayed the highest response to NH_(3)at room ***,the A5W5 gas sensor exhibited relatively good stability and excellent selectivity to NH_(3).The A5W5 sensor also displayed a relatively good response under high *** gas-sensing mechanism of the WO_(3)/Ag_(3)PO_(4)sensors is explained in *** together,the as-prepared sensor is highly efficient at detecting NH_(3)and could be suitable for practical *** addition,this study also provides a new method for developing Ag_(3)PO_(4)-based sensors in the gas-sensing field.

关键词： Ag_(3)PO_(4) peony-like WO_(3) NH_(3) room temperature

In-situ fabrication of ZnO nanoparticles sensors based on gas-sensing electrode for ppb-level H_(2)S detection at room temperature

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Chinese Physics B 2021年第2期30卷 250-256页

作者： Jing-Yue Xuan Guo-Dong Zhao Xiao-Bo Shi Wei Geng Heng-Zheng Li Mei-Ling Sun Fu-Chao Jia Shu-Gang Tan Guang-Chao Yin Bo Liu Laboratory of Functional Molecular and Materials School of Physics and Optoelectronic EngineeringShandong University of TechnologyZibo 255000China Institute of Artificial Intelligence Henan Finance UniversityZhengzhou 450046China

The zinc oxide(ZnO)nanoparticles(NPs)sensors were prepared in-situ on the gas-sensing electrodes by a one-step simple sol-gel method for the detection of hydrogen sulfide(H_(2)S)*** sphere-like ZnO NPs were characterized by scanning electron microscopy(SEM),transmission electron microscopy(TEM),x-ray diffraction(XRD),energy dispersive x-ray analysis(EDX),and their H_(2)S sensing performance were measured at room *** results indicate that the ZnO NPs exhibit excellent response to H_(2)S gas at room *** response value of the optimal sample to750 ppb H_(2)S is 73.3%,the detection limit reaches to 30 ppb,and the response value is 7.5%.Furthermore,the effects of the calcining time and thickness of the film on the gas-sensing performance were *** calcining time and film thickness show a negative correlation with the H_(2)S sensing *** corresponding reaction mechanism of H_(2)S detection was also discussed.

关键词： ZnO H_(2)S gas sensor room temperature

N/Ce doped graphene supported Pt nanoparticles for the catalytic oxidation of formaldehyde at room temperature

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Journal of Environmental Sciences 2023年第3期125卷 135-147页

作者： Yaodong Guo Zhaoying Di Xiaonan Guo Ying Wei Runduo Zhang Jingbo Jia State Key Laboratory of Chemical Resource Engineering Beijing Key Laboratory of Energy Environmental CatalysisBeijing University of Chemical TechnologyBeijing 100029China

Pt catalysts with nitrogen-doped graphene oxide (GO) as support and CeO_(2)as promoter were prepared by impregnation method,and their catalytic oxidation of formaldehyde (HCHO) at room temperature was *** Pt-CeO_(2)/N-rGO (reduced GO) with a mass fraction of 0.7% Pt and 0.8%CeO_(2)exhibited an excellent catalytic performance with the 100% conversion of HCHO at room *** characterization demonstrated that nitrogendoping greatly increased the defect degree and the specific surface area of GO,enhanced the dispersion of Pt and promoted more zero-valent *** synergistic effect between CeO_(2)and Pt was also beneficial to the dispersion of ***-doping promoted the production of more Ce3+ions,generating more oxygen vacancies,which was conducive to O_(2)*** a result,the catalyst exhibited enhanced redox properties,leading to the best catalytic ***,an attempt to propose the reaction mechanism of HCHO oxidation has been made.

关键词： Formaldehyde N-doped graphene oxide Pt catalyst room temperature

Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature

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Chinese Physics B 2011年第11期20卷 391-396页

作者：白安琪郑军陶冶了左玉华薛春来成步文王启明 State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Sciences

Well-aligned and closely-packed silicon nanopillar （SNP） arrays are fabricated by using a simple method with magnetron sputtering of Si on a porous anodic alumina （PAA） template at room temperature. The SNPs are formed by selective growth on the top of the PAA pore walls. The growth mechanism analysis indicates that the structure of the SNPs can be modulated by the pore spacing of the PAA and the sputtering process and is independent of the wall width of the PAA. Moreover, nanocrystals are identified by using transmission electron microscopy in the as-deposited SNP samples, which are related to the heat isolation structure of the SNPs. The Raman focus depth profile reveals a high crystallization ratio on the surface.

关键词： silicon nanopillar arrays porous anodic alumina nanocrystal room temperature