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Understanding angle-resolved polarized raman scattering from black phosphorus at normal and oblique laser incidences

引用

Science Bulletin 2020年第22期65卷 1894-1900,M0004页

作者： Miao-Ling Lin Yu-Chen Leng Xin Cong Da Meng Jiahong Wang Xiao-Li Li Binlu Yu Xue-Lu Liu Xue-Feng Yu Ping-Heng Tan State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering&CAS Center of Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100049China Shenzhen Engineering Center for the Fabrication of Two-Dimensional Atomic Crystals Shenzhen Institutes of Advanced TechnologyChinese Academy of SciencesShenzhen 518055China College of Physics Science and Technology Hebei UniversityBaoding 071002China Beijing Academy of Quantum Information Science Beijing 100193China

The selection rule for angle-resolved polarized raman(ARPR)intensity of phonons from standard grouptheoretical method in isotropic materials would break down in anisotropic layered materials(ALMs)due to birefringence and linear dichroism *** two effects result in depth-dependent polarization and intensity of incident laser and scattered signal inside ALMs and thus make a challenge to predict ARPR intensity at any laser incidence ***,taking in-plane anisotropic black phosphorus as a prototype,we developed a so-called birefringence-linear-dichroism(BLD)model to quantitatively understand its ARPR intensity at both normal and oblique laser incidences by the same set of real raman tensors for certain laser *** fitting parameter is needed,once the birefringence and linear dichroism effects are considered with the complex refractive *** approach was proposed to experimentally determine real raman tensor and complex refractive indexes,respectively,from the relative raman intensity along its principle axes and incident-angle resolved reflectivity by Fresnel’s *** results suggest that the previously reported ARPR intensity of ultrathin ALM flakes deposited on a multilayered substrate at normal laser incidence can be also understood based on the BLD model by considering the depth-dependent polarization and intensity of incident laser and scattered raman signal induced by both birefringence and linear dichroism effects within ALM flakes and the interference effects in the multilayered structures,which are dependent on the excitation wavelength,thickness of ALM flakes and dielectric layers of the *** work can be generally applicable to any opaque anisotropic crystals,offering a promising route to predict and manipulate the polarized behaviors of related phonons.

关键词： Angle-resolved polarized raman scattering Anisotropic layered material Birefringence Linear dichroism real raman tensor Complex refractive index

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