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Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors

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Chinese Physics B 2015年第11期24卷 460-463页

作者：罗俊赵胜雷宓珉瀚侯斌杨晓蕾张进成马晓华郝跃 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University School of Advanced Materials and Nanotechnology Xidian University

Frequency-dependent conductance measurements were carried out to investigate the trap states induced by reactive ion etching in A1GaN/GaN high-electron-mobility transistors （HEMTs） quantitatively. For the non-recessed HEMT, the trap state density decreases from 2.48 × 1013 ***-1 at an energy of 0.29 eV to 2.79 × 1012 ***-1 at ET = 0.33 eV. In contrast, the trap state density of 2.38 × 1013-1.10× 1014 ***-1 is located at ET in a range of 0.30-0.33 eV for the recessed HEMT. Thus, lots of trap states with shallow energy levels are induced by the gate recess etching. The induced shallow trap states can be changed into deep trap states by 350 ℃ annealing process. As a result, there are two different types of trap sates, fast and slow, in the annealed HEMT. The parameters of the annealed HEMT are ET = 0.29-0.31 eV and DT = 8.16× 1012-5.58 × 1013 ***-1 for the fast trap states, and ET = 0.37-0.45 eV and DT = 1.84×1013- 8.50 × 1013 ***-1 for the slow trap states. The gate leakage currents are changed by the etching and following annealing process, and this change can be explained by the analysis of the trap states.

关键词： AlGaN/GaN high-electron mobility transistors (HEMTs) annealing reactive ion etching trapstates

Black Silicon nanostructures on silicon thin films prepared by reactive ion etching

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Chinese Optics Letters 2013年第13期11卷 127-129页

作者： Martin Steglich Thomas Kasebier Ingmar Hoger Kevin Fuchsel Andreas Tiinnermann Ernst-Bernhard Kley Institute of Applied Physics A bbe Center of Photonics Friedrich Schiller University Jena Albert-Einstein-Str. 15 07745 Jena Germany Institute of Photonic Technology Albert-Einstein-Str. 9 07745 Jena Germany

In this letter, the application of dry etching to thin films on glass is described. The utilized （ICP-RIE） of SF6 and 02 is discussed and a demonstrated. prepare Black Silicon nanostructures on crystalline silicon reactive ion etching with an inductively coupled plasma remarkable increase in light absorption of about 70% is demonstrated.

关键词： reactive ion etching

A photoluminescence study of plasma reactive ion etching-induced damage in GaN

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Journal of Semiconductors 2014年第11期35卷 16-19页

作者： Z.Mouffak A.Bensaoula L.Trombetta ECE Department California State University Physics and ECE Departments University of Houston ECE Department University of Houston

GaN films with reactive ion etching （RIE） induced damage were analyzed using photoluminescence （PL）. We observed band-edge as well as donor-acceptor peaks with associated phonon replicas, all in agreement with previous studies. While both the control and damaged samples have their band-edge peak location change with temperature following the Varshni formula, its intensity however decreases with damage while the D-A peak increases considerably. Nitrogen post-etch plasma was shown to improve the band edge peak and decrease the D-A peak. This suggests that the N2 plasma has helped reduce the number of trapped carriers that were participating in the D-A transition and made the D°X transition more active, which reaffirms the N2 post-etch plasma treatment as a good technique to heal the GaN surface, most likely by filling the nitrogen vacancies previously created by etch damage.

关键词： GaN etch damage photoluminescence reactive ion etching

reactive ion etching of GaAs,GaSb,InP and InAs in Cl_2/Ar Plasma

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Semiconductor Photonics and Technology 2004年第3期10卷 203-207页

作者： HONGTing ZHANGYong-gang LIUTian-dong StateKeyLab.ofFunction.Mater.forInform. ShanghaiInstituteofMicrosystandInform.Technoi.CASsShanghai200050CHN

reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF *** rates of above 0.45 μm/min and 1.2 μm/min have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates （etching of In-containing materials,which were linearly increased with the applied RF *** surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance.

关键词： reactive ion etching Ⅲ-Ⅴ compounds Plasma

reactive ion etching of ITO Transparent Electrode of TFT-AMLCD in Ar/CF_4 Plasma

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Semiconductor Photonics and Technology 1998年第3期4卷 188-192页

作者： ElHassaneOULACHGAR XUZhongyang 等 Dept.ofElectron.Sci.＆Eng. HuazhongUniversityofSci.＆Tech.Wuhan430074CHN Dept.ofElectron.Sci.＆Eng. Hu

The pattern of ITO transparent electrode of pixel cells in TFT-AMLCD is a critical step in the manufacturing process of flat panel display devices,the development of suitable plasma reactive ion etching is necessary to achieve high resolution *** this work we investigated the Ar/CF 4 plasma etching of ITO as function of different *** demonstrated the ability of this plasma to etch ITO and achieved an etching rate of about 3.73 nm/min,which is expected to increase for long pumping down period,and also through addition of hydrogen in the *** we described the ITO etching mechanism in Ar/CF 4 *** investigation of selectivity showed to be very low over silicon nitride and silicon dioxide but very high over aluminum.

关键词： Ar/CF 4 plasma ITO reactive ion etching TFT-AMLCD

Transfer of Machined Patterns on an Aluminum Plate to Pyrex Glass Using reactive ion etching SF_(6) Plasma without Masks

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Journal of Surface Engineered Materials and Advanced Technology 2014年第5期4卷 262-269页

作者： Carlos M.Ortiz-Lima Fernando J.Quinones-Novelo Alberto Jaramillo-Nunez Jorge Castro-Ramos Insitituto Nacional de Astrofisica Optica y ElectronicaPueblaMexico

A method for etching the surface of a Pyrex glass substrate using the reactive ion etching process without the use of masks is reported. Variations in the machined surface on an auxiliary plate, manufactured in aluminum and placed below a Pyrex glass slide, were transferred to the upper surface of the substrate. SF6 as etching gas and low pressure chamber to promote the increase of mean free path of ions were used. Two etching ratios were found, general, that affects the entire surface of the substrate, and differential, which generates the relief on the surface of the glass. Differential etching depth showed a linear behavior with respect to time;the mean differential etching rate obtained was 43 nm/min. The same phase between the auxiliary plate machining and the etched pattern on the substrate is preserved. With this technique it was possible to manufacture convex and concave surfaces;some examples are given. The arithmetic mean roughness achieved with the proposed method was found to be N1 class, ideal for the development of optical corrector plates.

关键词： reactive ion etching No Masking RIE SF_(6) Plasma etching

Self-powered flexible fingerprint-recognition display based on a triboelectric nanogenerator

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Nano Research 2024年第4期17卷 3021-3028页

作者： Wandi Chen Haonan Wang Yibin Lin Xinyan Gan Heng Tang Yongai Zhang Qun Yan Tailiang Guo Xiongtu Zhou Chaoxing Wu School of Physics and Information Engineering Fuzhou UniversityFuzhou 350108China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350116China

In the time of Internet of Things(IoT),alternating current electroluminescence(ACEL)has unique advantages in the fields of smart display and human–computer ***,their reliance on external high-voltage AC power supplies poses challenges in terms of wearability and limits their practical *** paper proposed an innovative scheme for preparing a feather triboelectric nanogenerator(F-TENG)using recyclable and environmentally friendly *** highest open-circuit voltage,short-circuit current,and transferred charge of SF6-treated F-TENGs can reach 449 V,63μA,and 152 nC,which enables easy lighting of BaTiO_(3)^(-)doped ACEL *** a human electrical potential,a single-electrode F-TENG is combined with ACEL device for self-powered fingerprint recognition *** works achieve self-powered flexible wearable ACEL devices,which are not only efficient and portable but also have good application prospects in the human–computer interaction,functional displays,and wearable electronic devices.

关键词： alternating current electroluminescent triboelectric nanogenerator feather reactive ion etching fingerprint recognition

Self-generating nanogaps for highly effective surface-enhanced Raman spectroscopy

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Nano Research 2022年第4期15卷 3496-3503页

作者： Yangkai Chen Huan Li Jianmei Chen Dong Li Mengyuan Zhang Guanghua Yu Lin Jiang Yi Zong Bin Dong Zhoufang Zeng Yandong Wang Lifeng Chi Jiangsu Key Laboratory for Carbon-Based Functional Materials&Devices Institute of Functional Nano&Soft Materials(FUNSOM)Joint International Research Laboratory of Carbon-Based Functional Materials and DevicesSoochow UniversitySuzhou 215123China Research and Development Center for Genetics Resource Chinese Academy of SciencesChangzhou 213000China Institute of Genetics and Development Biology Chinese Academy of SciencesBeijing 100101China

The fabrication of surface enhanced Raman spectroscopy(SERS)substrates with controlled high density hot spots still remains ***,we report highly effective SERS substrates containing the self-generating(SG)nanogaps from polystyrene nanosphere monolayer through isotropic plasma *** emergence of multimode hot spots,i.e.,metal film over nanosphere(MFON)-like hot spots(closed gaps,0 nm),individual self-aligned hot spots(discrete gaps,>20 nm)and threedimensional(3D)hot spots(nanogaps,1-10 nm),makes the SG SERS substrates superior as compared to the traditional MFON or the well-ordered self-aligned SERS substrates in terms of enhancement,uniformity,and *** SG SERS substrates can function as the excellent SERS platforms for trace molecule detection in the practical application fields.

关键词： surface-enhanced Raman spectroscopy nanogaps colloidal lithography reactive ion etching

Fabrication of SiO_2 microdisk optical resonator

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Chinese Optics Letters 2007年第12期5卷 703-705页

作者：尉伟吴晓伟付绍军王勇裴元吉肖云峰韩正甫 National Synchrotron Radiation Laboratory University of Science and Technology of ChinaHefei 230029 Key Laboratory of Quantum Information Chinese Academy of SciencesUniversity of Science and Technology of ChinaHefei 230026

The silica microdisk optical resonator which exhibits whispering-gallery-type modes with quality factors of 9.67 x 104 is fabricated with photolithographic techniques. reactive ion beam etching （RIBE） is used to get the silica disks with photoresist masks on SiO2/Si made by standard ultraviolet （UV） photolithography, and spontaneous silicon etching by XeF2 is used to fabricate the silicon micropillars. This fabrication process can control the microcavity geometry, leading to high experiment repeatability and controllable cavity modes. These characteristics are important for many applications in which the microcavity is necessary, such as the auantum gate.

关键词： Photoresists reactive ion etching Silica