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Study on the Influence of rf power on Inductively Coupled Plasma Ion Source Injector Gas

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Study on the Influence of RF Power on Inductively Coupled Pl...

Numerical simulation and experimental research on an inductively coupled rf plasma cathode

第37届中国控制会议

作者： Xing Jin Xianghui Cheng Faxin Duan Jingjing Zhang School of Automation China University of Geosciences

Aiming at the spectral analysis instrument with inductively coupled plasma as excitation source, it is significant to study the influence of rf power on the optimum flow rate of injector gas. In this work, the two-dimensional axisymmetric model of ICP was established, and the magnetohydrodynamic equations were then solved by the finite element method. It found that under the experimental conditions（auxiliary gas 0.5 L/min, cooling gas 15 L/min）, the transition flow rate of injector gas is 0.3 L/min, and the change of rf power has no effect on it. It is also found that the optimal flow rate of injector gas is 0.6-1.4 L/min under the condition of 1000 W, 0.7-1.5 L/min with 1200 W and 0.8-1.6 L/min with 1400 W.

关键词： ICP rf power injector gas flow rate numerical simulation

来源： cnki会议评论

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Plasma Science and Technology 2022年第1期24卷 77-85页

作者：徐宗琦王平阳华志伟从拾源余盛楠 Institute of Engineering Thermophysics School of Mechanical EngineeringShanghai Jiao Tong UniversityShanghai 200240People's Republic of China Key Laboratory of Materials Modification by Laser Ion and Electron Beams(Ministry of Education)School of PhysicsDalian University of TechnologyDalian 116024People's Republic of China

In this study,numerical simulation and discharge current tests were conducted on an inductively coupled radio frequency(rf)plasma *** simulations and experimental measurements were performed to study the factors influencing the electron extraction characteristics,including the gas type,gas flow,input power and extracting *** simulation results were approximately consistent with the experimental *** experimentally found that the rf input power mainly determines the extracted electron *** electron current greater than 1 A was acquired at 270 W(rf input power),2.766 sccm(xenon gas).Our results prove that an inductively coupled rf plasma cathode can be reasonable and feasible,particularly for low power electric propulsion devices.

关键词： rf discharge rf plasma cathode electron extraction characteristics rf power electron current

Design of high reliability rf-LDMOS by suppressing the parasitic bipolar effect using enhanced p-well and double epitaxy

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Journal of Semiconductors 2015年第6期36卷 93-98页

作者：徐向明黄景丰遇寒钱文生周正良韩波王勇王鹏飞张卫 State Key Laboratory of ASIC and System School of Microelectronics Fudan University HuaHong Grace Semiconductor Manufacturing Corporation School of Computer and Information Engineering Fuyang Teachers College

A laterally diffused metal-oxide-semiconductor （LDMOS） device design with an enhanced p-well and double p-epitaxial structure is investigated for device ruggedness improvement while keeping its high device per- formance under high frequency. Based upon the device design, radio-frequency （rf） LDMOS transistors for GSM （global system for mobile communication） application have been fabricated by using 0.35/zm CMOS technolo- gies. Experimental data show that the proposed device achieves a breakdown voltage of 70 V, output power of 180 W. The rf linear gain is over 20 dB and the power added efficiency （PAE） is over 70% with the frequency of 920 MHz. In particular, it can pass the 20 ： 1 voltage standing wave ratio （VSWR） load mismatch biased at drain DC supply voltage of 32 V and output power at 10-dB gain compression point （P10dB）. The device ruggedness has been remarkably improved by using the proposed device structure.

关键词： rf power LDMOS semiconductor device ruggedness reliability

Direct growth of graphene films without catalyst on flexible glass substrates by PECVD

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Chinese Physics B 2021年第9期30卷 565-573页

作者：苗瑞霞赵晨鹤王少青任卫李永锋束体康杨奔 School of Electronic Engineering Xi'an University of Posts&TelecommunicationsXi'an 710121China

A hydrogen-plasma-etching-based plasma-enhanced chemical vapor deposition(PECVD)synthesis route without metal catalyst for preparing the graphene films on flexible glass is *** quality of the prepared graphene films is evaluated by scanning electron microscopy,x-ray photoelectron spectroscopy,high-resolution transmission electron microscopy,ultraviolet-visible spectroscopy,and electrochemical *** a radio frequency(rf)power range of 50 W-300 W,the graphene growth rate increases with rf power increasing,while the intensity ratio of D-to G-Raman peak(I_(D)/I_(G))*** the rf power is higher than 300 W,the I_(D)/I_(G)rises *** optimizing experimental parameters of hydrogen plasma etching and rf power,the properties of as-prepared flexible graphene on glass are modulated to be able to achieve the graphene's transparency,good electrical conductivity,and better macroscopic *** growth of graphene film without any metal catalyst on flexible glass can be a promising candidate for applications in flexible transparent optoelectronics.

关键词： graphene flexible glass PECVD rf power

Characteristics of GaN Thin Films Using Magnetron Sputtering System

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Journal of Modern Physics 2016年第15期7卷 2028-2037页

作者： Hasina F. Huq Rocio Y. Garza Roman Garcia-Perez Electrical Engineering University of Texas Pan American Edinburg USA

The paper presents a polycrystalline GaN thin film with a hexagonal wurtzite structure under the optimized sputtering conditions of 40 W rf power, 5 mT working pressure, using pure nitrogen gas with a substrate temperature of 700°C. The study examines the effects of surface disorders and incorporates it in the thin films characteristics. A radio frequency (rf) Ultra High Vacuum (UHV) Magnetron Sputtering System has been used for the deposition of Gallium Nitride (GaN) on silicon, sapphire and glass substrates with different parameters. The power is varied from 40 W to 50 W, and the pressure from 4 mT to 15 mT. The effects of the rf sputtering powers and gas pressures on the structural properties are investigated experimentally. Sputtering at a lower rf power of 15 W does increase the N atomic percentage, however the deposition rate is substantially slower and the films are amorphous. GaN deposited on both silicon and sapphire wafer resulted in thin films close to stoichiometric once the N2 concentration is 60% or higher. It is also observed that the substrate cooling/heating effects improve the quality of the thin films with fewer defects present at the surface of the GaN epi-structure.

关键词： GaN UHV Magnetron Sputtering rf power HEMT Thin Film Characterization