检索结果-南通市图书馆

MOCVD Preparation of YBCO Coated Conductors on CeO_2/YSZ/Y_2O_3 Buffered rabits Substrate

在线全文

学校读者我要写书评

暂无评论

稀有金属材料与工程 2011年第S3期40卷 334-337页

作者： Gao Lei, Yu Miao, Jing Tongguo, Zhang Zhao, Xue Yan, Zhao Xiaohui, Xiong Jie, Tao Bowan State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China Univ Elect Sci & Technol China State Key Lab Elect Thin Films & Integrated Devic Chengdu 610054 Peoples R China

Superconducting YBa2Cu3O7-x films were grown on the CeO2/YSZ/Y2O3 buffered rolling assisted biaxial textured Ni-5at%W substrate by MOCVD method. Self-made Y(DPM)3, Ba(DPM)2, and Cu(DPM)2 were used as the precursors. Different ratios of the precursors were applied to optimize the hetero-epitaxial structure and property of YBCO films. X-ray diffraction revealed that YBCO films had excellent in plane texture with full width at half maximum (FWHM) value of (103)=5.6°-6.5° and out-of-plane texture with FWHM of (005)=3.1°-3.7°. The superconductivity of YBCO films was measured. The relationship between the ratios of the precursors and the property of the films were discussed in detail.

关键词： MOCVD YBCO DPM rabits coated conductors

Preparation and Characterization of CeO_2/YSZ/CeO_2 Buffer Layers for YBCO Coated Conductors

在线全文

学校读者我要写书评

暂无评论

Journal of Materials Science & Technology 2007年第4期23卷 457-460页

作者： Jie XIONG Yin CHEN Yang QIU Bowan TAO Wenfeng QIN Xumei CUI Yanrong LI State Key Lab of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China

CeO2 seed layer was deposited on rolling-assisted biaxially textured metal substrates by direct-current （DC） magnetron reactive sputtering. The effect of deposition temperature on epitaxial orientation of CeO2 thin films was examined. High quality CeO2 layers were achieved at deposition temperature from 750℃ to 850℃.Subsequently yttria-stabilized zirconia （YSZ） and CeO2 films were deposited to complete the buffer layer structure via the same process. The best samples exhibited a highly biaxial texture, as indicated by FWHM （full width half maximum） values in the range of 4°-5°, and 2°-4° for in-plane and out-of-plane orientations,respectively. Secondary ion mass spectrometer analysis confirmed the effective prevention of buffer layer against Ni and W metal interdiffusion. Atomic force microscope observations revealed a smooth, dense and crack-free surface morphology, which provided themselves as the good buffer structure to the YBa2Cu3O7-δ（YBCO） coated conductors.

关键词： Buffer Direct-current magnetron reactive sputtering Coated conductors rabits

在线全文

学校读者我要写书评

暂无评论

NiW合金基带电化学抛光过程研究

稀有金属材料与工程 2012年第6期41卷 1075-1079页

作者：王雪李成山于泽铭郑会玲冀勇斌樊占国东北大学辽宁沈阳110004 西北有色金属研究院陕西西安710016

采用硫酸溶液作为抛光液对轧制辅助双轴织构技术制备的Ni5W合金基带进行电化学抛光,在不同的抛光液浓度下获得了表面状态不同的基带。利用X射线光电子能谱(XPS)、X射线衍射(XRD)、扫描电镜(SEM)等手段研究了抛光过程中表面物质相成分及... 详细信息

采用硫酸溶液作为抛光液对轧制辅助双轴织构技术制备的Ni5W合金基带进行电化学抛光,在不同的抛光液浓度下获得了表面状态不同的基带。利用X射线光电子能谱(XPS)、X射线衍射(XRD)、扫描电镜(SEM)等手段研究了抛光过程中表面物质相成分及成因。结果表明:抛光液浓度较低时基带表面会形成过量的氧化物和H2WO4,造成表面选择性溶解过程紊乱,导致无法抛光。通过优化抛光液浓度可在基带表面获得适当厚度的固体层和粘液层,电流通过时可获得良好的抛光效果。

关键词：硫酸 rabits Ni5W基带电化学抛光

脉冲激光外延生长YBa_2Cu_3O_(7–δ)涂层导体LaMnO_3缓冲层

在线全文

学校读者我要写书评

暂无评论

电子元件与材料 2012年第2期31卷 26-29页

作者：刘宗洁鲁玉明范峰刘志勇蔡传兵上海大学物理系上海200444

采用脉冲激光沉积技术在双轴织构的Ni95W5(Ni-5W)合金基底上外延生长了LaMnO3(LMO)薄膜作为涂层导体缓冲层,研究了沉积温度对LMO薄膜生长织构和表面形貌的影响。研究结果表明:沉积温度对LMO薄膜的表面形貌有一定的影响;在沉积温度为650... 详细信息

采用脉冲激光沉积技术在双轴织构的Ni95W5(Ni-5W)合金基底上外延生长了LaMnO3(LMO)薄膜作为涂层导体缓冲层,研究了沉积温度对LMO薄膜生长织构和表面形貌的影响。研究结果表明:沉积温度对LMO薄膜的表面形貌有一定的影响;在沉积温度为650℃时,LMO薄膜具有良好的(00l)取向,薄膜表面平整均匀,光滑致密,其均方根粗糙度在2 nm以下;而且,在此LMO缓冲层上外延生长的YBa2Cu3O7–δ超导层具有良好的双轴织构,超导转变温度Tc为92 K,转变宽度小于1 K,临界电流密度Jc为5.3×105A/cm2(77 K,自场)。

关键词：缓冲层涂层导体双轴织构 rabits LaMnO3