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Injector quantum dot Molecule infrared photodetector:A Concept for Efficient Carrier Injection

Nano-Micro Letters 2011年第2期3卷 121-128页

作者： Thomas Gebhard Thomas Gebhard Photonics InstituteVienna University of Technology

quantum dot infrared photodetectors are expected to be a competitive technology at high oper ation temperatures in the long and very long wavelength infrared spectral *** the fact that they already achieved notable success,the performance suffers from the thermionic emission of electrons from the quantum dots at elevated temperatures resulting in a decreasing *** order to provide an efficient carrier injection at high temperatures,quantum dot infrared photodetectors can be separated into two parts:an injection part and a detection part,so that each part can be separately *** order to integrate such functionality into a device,a new class of quantum dot infrared photodetectors using quantum dot molecules will be *** addition to a general discussion simulation results suggest a possibility to realize such a device.

关键词： quantum dot infrared photodetector Injection quantum dot molecule High temperature operation Responsivity

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Optimal design of resonant enhanced quantum dot photodetector based on metal-insulator-metal microcavity

Optimal design of resonant enhanced quantum dot photodetecto...

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国防光电子论坛第二届新型探测技术及其应用研讨会

作者： Han Wang Youliang Jing Mengyao Li Honglou Zhen State Key Laboratory of infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences

The design of quantum dot infrared photodetector(QDIP) based on mater-insulator-meter(MIM) microcavity in which the quantum dot(QD) is sandwiched between a planar metallic film and a metallic stripe is reported. By a finite difference time-domain method, the light coupling efficiency spectra and enhancement fator are numerically calculated. The results exhibit that the total electric field concentrated in metal-metal region is strongly enhanced when the resonant frequency of microcavity is equal to the QD’s peak response frequency. This enhancement effect mainly origines from the resonant coupling of incident photons into microcavity forming the surface plasmon mode. The optimization of structural parameters for MIM microcavity is discussed, which demonstrates an optimal structure of quantum dot infrared photodetector with the coupling efficiency improved nearly 7 times compared with conventional mesa QDIPs. So, it is deduced that a favorable performance of device such as high quantum efficiency and infared responsivity is possible. Finally, the detector shows the potential application in the infrared sensing and imaging, as well as integrating with other electronic and optoelectronic device for the sub-wavelength size.

关键词： quantum dot infrared photodetector Metal-insulator-metal Microcavity Resonant Enhancement Surface Plasmon Coupling Efficiency

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