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Asymmetric resonant cavities and their applications in optics and photonics: a review

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Frontiers of Optoelectronics 2010年第2期3卷 109-124页

作者： Yun-Feng XIAO Chang-Ling ZOU Yan LI Chun-Hua DONG Zheng-Fu HAN Qihuang GONG State Key Lab for Mesoscopic Physics School of Physics Peking University Key Laboratory of Quantum Information University of Science and Technology of China

Asymmetric resonant cavities(ARCs) with smoothly deformed boundaries are currently under intensive study because they possess distinct properties that conventional symmetric cavities cannot provide. On one hand, it has been demonstrated that ARCs allow for highly directional emission instead of the in-plane isotropic light output in symmetric whispering-gallery cavities, such as microdisks, microspheres, and microtoroids. On the other hand, ARCs behave like open billiard system and thus offer an excellent platform to test classical and quantum chaos. This article reviews the recent progresses and prospects for the experimental realization of ARCs, with applications toward highly directional microlasing, strongcoupling light-matter interaction, and highly sensitive biosensing.

关键词： asymmetric resonant cavity (ARC) directional emission quality factor whispering gallery mode chaos

Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate

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Journal of Semiconductors 2006年第5期27卷 769-773页

作者： Xue Chunlai Yao Fei Cheng Buwen Wang Oiming State Key Laboratory of Integrated Optoelectronics Institute of Semiconductors Chinese Academy of SciencesBeijing 100083China

The effects of key geometrical parameters on the performance of integrated spiral inductors are investigated with the 3D electromagnetic simulator *** varying geometrical parameters such as the number of turns(N),the width of the metal traces(W),the spacing between the traces(S),and the inner diameter(ID),changes in the performance of the inductors are analyzed in *** reasons for these changes in performance are *** results indicate that the performance of an integrated spiral inductor can be improved by optimizing its *** design rules are summarized.

关键词： silicon substrate spiral inductor quality factor self resonance frequency

Lumped Equivalent Circuit of Planar Spiral Inductor for CMOS RFIC Application

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Journal of Semiconductors 2005年第11期26卷 2058-2061页

作者：赵吉祥中国计量学院电子工程系杭州310018

A lumped π-type equivalent circuit of planar spiral inductor for CMOS RFIC application is developed by the domain decomposition method for conformal modules （DDM-CM）. Closed form expressions of lumped parameters for a square spiral inductor on a Si-SiO2 substrate are obtained and verified with the previously published experimental results.

关键词： planar spiral inductors equivalent circuit inductance quality factor DDM-CM

A Novel Local-Dielectric-Thickening Technique for Performance Improvements of Spiral Inductors on Si Substrates

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Journal of Semiconductors 2005年第5期26卷 857-861页

作者：杨荣李俊峰赵玉印柴淑敏韩郑生钱鹤中国科学院微电子研究所北京100029

A novel local-dielectric-thickening technique i s presented for performance improvements of Si-based spiral *** technique employs the processes of deposition,photolithography,and wet-etching,to locally thicken the oxide layer under the inductor,which can decrease the substrate loss and improve the inductor *** the structures and processes are compact,economical,and compatible with CMOS *** square spiral inductors with different inductances are fabricated,and the quality factors and the self-resonant frequencies both increase clearly with this proposed technique:for the 10nH,5nH,and 2nH inductors,the peak quality factors are effectively improved by 46.7%,49.7%,and 68.6%,respectively;however,the improvement percents of the self-resonant frequencies are more significant,which are 92.1%,91.0%,and no less than 68.1% respectively.

关键词： silicon inductor structure process quality factor self-resonant frequency

Novel Substrate pn Junction Isolation for RF Integrated Inductors on Silicon

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Journal of Semiconductors 2001年第12期22卷 1486-1489页

作者：刘畅陈学良严金龙中国科学院上海冶金研究所微电子学分部上海200233

A new method for reducing the substrate rated losses of integrated spiral inductors is *** method is to block the eddy currents induced by spiral inductors by directly forming pn junction isolation in the Si substrate. The substrate pn junction can be realized by using the standard silicon technologies without any additional processing *** inductors on silicon are designed and fabricated. S parameters of the inductor based equivalent circuit are investigated and the inductor parameters are *** impacts of the substrate pn junction isolation on the inductor quality factor are *** experimental results show that substrate pn junction isolation in certain depth has achieved a significant *** 3GHz,the substrate pn junction isolation increases the inductor quality factor by 40%.

关键词： Si integrated inductor quality factor eddy current pn junction isolation

A Solenoid-Type Inductor Fabricated by MEMS Technique

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Journal of Semiconductors 2005年第6期26卷 1083-1086页

作者：高孝裕周勇王西宁雷冲陈吉安赵小林上海交通大学微纳科学技术研究院

A solenoid-type inductor for high frequency application is realized using a micro-electro-mechanical systems (MEMS) *** order to achieve a high inductance value and Q-factor,UV-LIGA,dry etching technique,fine polishing and electroplating technique are *** dimensions of the inductor are 1500μm×900μm×70μm,having 41 turns with a coil width of 20μm separated by 20μm spaces and a high aspect ratio of 3.5∶*** maximum measured inductance of the inductor is 6.17nH with a Q-factor of about 6.

关键词： inductance value microelectromechanical systems quality factor

Synthesis and microwave dielectric behavior of (Bi_(1-x)Pb_(x))NbO_(4) ceramics

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Journal of Advanced Dielectrics 2016年第1期6卷 61-68页

作者： S.P.Butee K.R.Kambale Shaishav Upadhyay S.Bashaiah K.C.James Raju Himanshu Panda Department of Metallurgy and Materials Science College of Engineering Pune(An Autonomous Institute of Government of Maharashtra)Maharashtra 411005 India School of Physics University of HyderabadTelungana 500046India Department of Materials Engineering Defence Institute of Advanced Technology PuneMaharashtra 411025India

Ceramic samples of(Bi_(1-x)Pb_(x))NbO_(4)(x=0,0.025,0.05,0.10,0.15,0.20)with 0.75 wt.%V2O5 addition sintered at 920℃,940℃ and 960℃ are *** is selected as a substitute for Bi^(3+)in BiNbO_(4) ceramics as it exists in two stable valence states of+2 and+4 and the average valency matches to that of Bi^(3+).The average Shannon radius(for octahedral coordination)of Pb^(2+)(1.19Å)and Pb^(4+)(0.775Å)cations is 0.9825Å,which is similar to that of Bi^(3+)ion(1.03Å).The dense(>94%)polycrystalline(Bi_(1-x)Pb_(x))NbO_(4) samples fabricated mostly reveal orthorhombic(Pnna)phase(α-BiNbO_(4),***.52)by powder *** of satellite Pb2Nb2O7 phase,the amount of which is increasing with increase in Pb content,is also *** microwave dielectric constant(ε'r)values of the niobates are found to increase from 42 to 71,whereas the quality factor(Qu.f)values are found to decrease from 5400 to 550 GHz with increasing substitution of *** compositions so synthesized are important as hardly there are any microwave dielectric ceramics available with 45<ε'r<75.

关键词： Ceramics sintering BiNbO_(4) microwave dielectric properties quality factor

Simulating the strong ground motion of the 2022 MS6.8 Luding,Sichuan,China Earthquake

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地震学报:英文版 2023年第4期36卷 283-296页

作者： Libao Zhang Lei Fu Aiwen Liu Su Chen Institute of Geophysics China Earthquake AdministrationBeijing 100081China College of Architecture and Civil Engineering Beijing University of TechnologyBeijing 100024China

Stochastic finite-fault simulations are effective for simulating ground motions and are widely used in engineering to determine the impacts of ground motion and develop relevant predictive *** this study,the source,path,and site amplification coefficient of western Sichuan Province,China,and stochastic finite-fault simulations were used to simulate the acceleration time series,Fourier amplitude spectra,and 5%damped response spectra of 28 strong-motion stations with rupture distances within 300 km of the 2022 MS6.8 Luding *** simulation results of 14 stations at rupture distances of 45-185 km match the ***,the simulation results of 3 near-and 6 far-field stations at rupture distances of 12-36 km and 222-286 km,respectively,were obviously deviated from the *** results of the near-field stations are larger than the observations at high frequencies(>6 Hz).The discrepancy likely comes from the nonlinear site effect of near-field stations,which reduced the site amplification at high *** result of the far-field stations is smaller than the observation at frequencies above 1 *** these stations are located close to the Longmenshan Fault Zone(LFZ),thus,we obtained a new quality factor(Q)from data of historical events and stations located around *** the new Q value,the discrepancies of the high-frequency simulation results of the far-field stations were *** result indicated that the laterally varying Q values can be used to address the impact of strong crustal lateral heterogeneity on simulation.

关键词： stochastic finite-fault simulation response spectrum quality factor site nonlinearity Luding MS6.8 earthquake

MEMS Inductor Consisting of Suspended Thick Crystalline Silicon Spiral with Copper Surface Coating

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Journal of Semiconductors 2006年第4期27卷 662-666页

作者：吴文刚李轶黄风义韩翔张少勇李志宏郝一龙北京大学微电子学研究院微米/纳米加工技术国家级重点实验室北京100871 东南大学无线电系射频与光电集成电路研究所南京210096

A novel MEMS inductor consisting of a planar single crystalline silicon spiral with a copper surface coating as the conductor is presented. Using a silicon-glass anodic bonding and deep etching formation-and-release process,a 40μm-thick silicon spiral is formed, which is suspended on a glass substrate to eliminate substrate loss. The surfaces of the silicon spiral are coated with highly conformal copper by electroless plating to reduce the resis- tive loss in the conductor,with thin nickel film plated on the surface of the copper layer for final surface passivation. The fabricated inductor exhibits a self-resonance frequency higher than 15GHz,with a quality factor of about 40 and an inductance of over 5nil at 11.3GHz. Simulations based on a compact equivalent circuit model of the inductor and parameter extraction using a characteristic-function approach are carried out,and good agreement with measurements is obtained.

关键词： MEMS inductor suspended spiral copper coating quality factor modeling and parameter extrac tion radio frequency