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Passive q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs

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Chinese Optics Letters 2004年第1期2卷 31-33页

作者：王勇刚马骁宇钟斌王德松张秋琳冯宝华 Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 Institute of Physics Chinese Academy of Sciences Beijing 100080

We reported a passive q-switched diode laser pumped Yb: YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As+ in the concentration of 1016 ions/cm2. To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500℃ for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and high reflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.

关键词： Ion implantation q switching Semiconducting gallium arsenide Ytterbium compounds

Actively q-switched ring Tm-doped fiber laser with free space structure

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Chinese Optics Letters 2016年第9期14卷 41-43页

作者：刘伟鞠有伦戴通宇徐丽伟袁晋鹤杨超姚宝权段小明 National Key Laboratory of Tunable Laser Technology Harbin Institute of Technology

We report a cladding-pumped actively q-switched ring Tm-doped fiber laser（TDFL）. This laser is q-switched by a free space acousto-optic modulator. A pulse energy up to 150 μJ with a pulse width of 207 ns at a repetition rate of100 Hz is achieved for a cavity optical length of 6.68 m. The pulse amplitude’s stability at this repetition rate is better than 95%. To the best of our knowledge, this is the first free space structure q-switched ring TDFL report.

关键词： Fiber lasers Pumping (laser) q switching Space applications Space platforms

Passively q-switched laser with single longitudinal mode based on the frequency selection of grating and F-P etalon in twisted-mode folded cavity

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Chinese Optics Letters 2009年第9期7卷 805-808页

作者：宋宝安赵卫疆任德明曲彦臣张合勇钱黎明胡孝勇 National Key Laboratory of Tunable Laser Technology Harbin Institute of Technology

A passively q-switched side-pumped laser with folded resonator is specially constructed for single- longitudinal-mode smooth pulse output. Nd：YAG is chosen as the laser active medium and Cr^4＋：YAG as the saturable absorber medium. Additionally, the method of frequency selection by grating with 1200 line/mm and Fabry-Perot （F-P） etalon is used in the twisted-mode cavity. The single-frequency smooth pulses are produced with 10-Hz repetition rate, 20-ns pulse width, and 1.064-μm wavelength. The proba- bility of single-frequency laser output measured is over 99% by using the methods of Fourier analysis and F-P etalon multiple-beam interferometry at the threshold voltage. The measured near-field and far-field angles of divergence are 1.442 and 1.315 mrad, respectively. The values of M^2 are 1.32 and 1.31 separately with the knife-edge method. Single pulse at 1.064 tim with the energy of 8.8 mJ is achieved in TEM00 mode.

关键词： Chromium Etalons Fourier analysis Pulsed laser applications Pumping (laser) q switching

Erbium-doped CW and q-switched fiber ring laser with fiber grating Michelson interferometer

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Chinese Optics Letters 2003年第1期1卷 28-30页

作者：王安廷明海谢建平许立新黄文财吕亮陈曦曜李锋吴云霞邢美术 Department of Physics University of Scicnce & Technology of China Hefei 230026

The band-pass characteristic of fiber grating Michelson interferometer is analyzed, which acts as bothband-pass filter and q-switch. An erbium-doped fiber ring laser based on fiber grating Michelsoninterferometer is implemented for producing single longitudinal mode CW operation with 5 MHz spectrallinewidth and up to 6 mW output power. In q-switched operation, stable fiber laser output pulses withrepetition rate of 800 Hz, pulse width of 0.6 μs, average power of 1.8 mW and peak power of 3.4 W aredemonstrated. The peak power and average power of the q-switched pulses are varied with the repetitionrate.

关键词： Continuous wave lasers Diffraction gratings Interferometers q switching

Multi-watt q-switched Nd:YVO_4 laser with GaAs output coupler

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Chinese Optics Letters 2003年第1期1卷 31-33页

作者：李平王青圃李世忱连结马宝民何京良 Department of Optics Shandong University Ji'nan 250100 College of Precision Instruments and Optoelectronics Engineering Tianjin UnversityTianjin 300072 Department of Optics Shandong UniversityJi'nan 250100 College of Precision Instruments and Optoelectronics Engineering Tianjin UniversityTianjin 300072 Dopartment of Optics Shandong University Ji'nan 250100 Department of Physics Shandong Normal University Ji'nan 250100

A passively q-switched operation of a diode-pumped ***;laser is demonstrated, in which a GaAsfilm is used as the saturable absorber as well as the output coupler. At the pump power of 10 W, a stablefundamental-mode average power output of 2.11 W was obtained with a pulse duration of 140 ns, pulseenergy of 76 μJ and pulse repetition rate of 28 kHz. A theoretical analysis that describes the passiveq-switching dynamics of GaAs is presented.

关键词： q switching

Continuous wave and passively q-switched Nd:Lu_(0.15)^- Y_(0.85)VO_4 laser with 885nm direct pumping

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Optoelectronics Letters 2015年第3期11卷 199-202页

作者：李奇楠赵斌张韬李瑞刘相梅郑亚辉刘晓军 Department of Physics College of Science Qiqihar University College of Chemistry Fuzhou University

The 885 nm direct pumping directly into the^4F_(3/2)emitting level of Nd^(3+)is applied on an Nd:Lu_(0.15)Y_(0.85)VO_4 *** maximum output power of 2.8 W for continuous wave(CW)operation is *** q-switched operation,the maximum average output power is 1.2 W with pulse repetition of 23.69 kHz and pulse width of 35 ns at the pump power of 27.9 *** high-quality fundamental transverse mode can be observed owing to the reduction of thermal effect for Nd:Lu_(0.15)Y_(0.85)VO_4 crystal by 885 nm direct pumping.

关键词： Pumping (laser) q switching

C-cut Nd-doped vanadate crystal self-Raman laser with narrow q-switched envelope and high mode-locked repetition rate

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Optoelectronics Letters 2014年第6期10卷 423-426页

作者：李祚涵彭继迎郑义杨野寇晋华 Institute of Laser School of Science Beijing Jiaotong University Key Laboratory of Luminescence and Optical Information Ministry of Education Beijing Jiaotong University

In this paper, a passively q-switched and mode-locked c-cut Nd-doped vanadate crystal self-Raman laser at 1.17 μm is firstly demonstrated by using Cr4+:YAG. Two crystals of Nd3+:YVO4 and Nd3+:Gd VO4 are adopted to generate laser, respectively. With the incident pump power of 13 W, the average output powers of 678 m W and 852 m W at 1.17 μm are obtained with the durations of q-switched envelope of 1.8 ns and 2 ns, respectively. The mode-locked repetition rates are as high as 2.3 Hz and 2.2 GHz, respectively. As far as we know, the q-switched envelope is the narrowest and the mode-locked repetition rate is the highest at present in this field. In addition, yellow laser output is also achieved by using the Li B3O5 frequency doubling crystal.

关键词： Frequency doublers Locks (fasteners) q switching

An LD-pumped dual-wavelength actively q-switched Nd:Sc_(0.2)Y_(0.8)SiO_5 laser

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Optoelectronics Letters 2015年第2期11卷 92-94页

作者：杨秀芹马志国郑丽和尚连聚苏富芳 Shandong Provincial Key Laboratory of Laser Polarization and Information Technology Department of PhysicsQufu Normal University State Key Laboratory of Crystal Materials Institute of Crystal Materials Shandong University Shanghai Institute of Ceramics Chinese Academy of Sciences

We demonstrate a laser-diode （LD） pumped actively q-switched laser with Nd：Sc0.2Y0.5SiO5 （Nd：SYSO） crystal for the first time. A stable actively q-switched laser is obtained at dual wavelengths of 1 075.2 nm and 1 078.2 nm. The maximum average output power of 720 mW is obtained at the repetition rate of 15 kHz under the pump power of 8.7 W. The minimum pulse width of 58 ns is obtained at the repetition rate of 5 kHz under the pump power of 8.7 W, corresponding to the peak power of 1.9 kW and the pulse energy of 112 μJ.

关键词： Bioassay Microarrays Optical pumping Pulse repetition rate q switched lasers q switching

KLu(WO_4)_2 crystal as the Raman medium in a diode-pumped passively q-switched Nd:YAG laser

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Optoelectronics Letters 2012年第5期8卷 321-324页

作者：徐慧华张行愚王青圃丛振华王聪王伟涛李雷刘兆军陈晓寒范书振贺建立张怀金 Key Laboratory on Laser Technology and Application of Shandong Province School of Information Science and EngineeringShandong University State Key Laboratory of Crystal Materials Shandong University

A diode-pumped passively q-switched Nd:YAG/KLu(WO 4 ) 2 (KLW) Raman laser is presented for the first time. As high as 1.89 W average output power is obtained at the pump power of 15.7 W with the pulse repetition frequency (PRF) of 27.2 kHz, and the corresponding diode-to-Stokes conversion efficiency is 12.0%. The highest pulse energy of 84.0 μJ is obtained. The obtained average output power and pulse energy are much higher than the previously reported results of diode-pumped passively q-switched Raman lasers.

关键词： Conversion efficiency Neodymium Pumping (laser) q switching