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Enhanced proton irradiation resistance in Cs-doped CH_(3)NH_(3)PbI_(3) films and solar cells

Journal of Energy Chemistry 2022年第6期31卷 261-269,I0008页

作者： Pan Luo Xue-Yin Sun Hao Jiang Li Yang Yang Li Wen-Zhu Shao Liang Zhen Cheng-Yan Xu School of Materials Science and Engineering Harbin Institute of TechnologyHarbin 150001HeilongjiangChina National Key Laboratory for Precision Hot Processing of Metals Harbin Institute of TechnologyHarbin 150001HeilongjiangChina MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing Harbin Institute of TechnologyHarbin 150080HeilongjiangChina Sauvage Laboratory for Smart Materials School of Materials Science and EngineeringHarbin Institute of Technology(Shenzhen)Shenzhen 518055GuangdongChina

Mixed-cation perovskite solar cells have attracted tremendous attention in space applications due to their excellent power conversion efficiency (PCE) and stability to light and heat.Although the evolution of photovoltaic performance in different space environments has been investigated,the role of inorganic cesium ions (Cs^(+)) in the enhancement of irradiation resistance needs to be further clarified.Herein,the structure and performance evolution of Cs-doped CH_(3)NH_(3)PbI_(3)(MAPbI_(3)) films and planar heterojunction devices under proton irradiation up to 1×10^(16)p cm^(-2) were studied.5%of Cs^(+) doping can increase the cohesive energy of MAPbI_(3)and effectively alleviate the lattice strain induced by proton irradiation,thereby enhancing the crystallinity and stability of films.The bandgap changes of irradiated Cs_(0.05)MA_(0.95)PbI_(3) films under the identical fluence were only one third of that of MAPbI_(3) films.Upon irradiation under the fluence of 1×10^(14)p cm^(-2),the density of trap states in the undoped and 5%Cs-doped films increased by 71%and 9%,respectively,and the average PCE of 20 corresponding devices decreased only by 12%and 9%,respectively.This proves that the replacement of organic methylamine ion with inorganic cesium ion contributes to the improvement of MAPbI_(3) resistance to proton irradiation,thus confirming the application prospects of mixed-cation or all-inorganic perovskite solar cells in spacecraft.

关键词： proton irradiation Perovskite solar cells Cesium doping irradiation resistance

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proton irradiation-induced dynamic characteristics on high performance GaN/AlGaN/GaN Schottky barrier diodes

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Chinese Physics B 2023年第8期32卷 404-408页

作者：张涛李若晗苏凯苏华科吕跃广许晟瑞张进成郝跃 Key Laboratory of Wide Band-Gap Semiconductors and Devices School of MicroelectronicsXidian UniversityXi'an 710071China Xi'an Microelectronics Technology Institute Xi'an 710054China School of Aerospace Science and Technology Xidian UniversityXi'an 710071China

Dynamic characteristics of the single-crystal Ga N-passivated lateral AlGaN/GaN Schottky barrier diodes(SBDs)treated with proton irradiation are investigated.Radiation-induced changes including idealized Schottky interface and slightly degraded on-resistance(RON)are observed under 10-Me V proton irradiation at a fluence of 10^(14)cm^(-2).Because of the existing negative polarization charges induced at GaN/AlGaN interface,the dynamic ON-resistance(RON,dyn)shows negligible degradation after a 1000-s-long forward current stress of 50 mA to devices with and without being irradiated by protons.Furthermore,the normalized RON,dynincreases by only 14%that of the initial case after a 100-s-long bias of-600 V has been applied to the irradiated devices.The high-performance lateral AlGaN/GaN SBDs with tungsten as anode metal and in-situ single-crystal GaN as passivation layer show a great potential application in the harsh radiation environment of space.

关键词： AlGaN/GaN SBDs GaN passivation layer proton irradiation dynamic on-resistance

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proton irradiation Effects on the Structural and Tribological Properties of Polytetrafluoroethylene

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Chinese Journal of Polymer Science 2016年第12期34卷 1448-1455页

作者：刘百幸 Jun Liang Zhen-jun Peng Xiang-li Wang State Key Laboratory of Solid Lubrication Lanzhou Institute of Chemical PhysicsChinese Academy of Sciences Key Laboratory for Electronic Materials of the State Ethnic Affairs Commission College of Electric EngineeringNorthwest University for Nationalities

Polytetrafluoroethylene （PTFE） was irradiated with protons in a ground-based simulation facility to study the effects of proton irradiation on the structural and tribological properties of PTFE. The structural changes were characterized by X-ray photoelectron spectroscopy （XPS） and attenuated total-reflection FTIR （ATR-FTIR）, while the tribological properties were evaluated by friction and wear tests. It was found that proton irradiation induced the degradation of PTFE molecular chains, resulting in the increase of C concentration and the decrease in F concentration on the sample surfaces, and the surface chemical structure and morphology of the samples changed, which affected the friction coefficient and decreased the wear rate of the specimens as the friction and wear tests revealed.

关键词： Polytetrafluoroethylene proton irradiation Degradation Friction and wear.

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proton irradiation effect on SCDs

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Chinese Physics C 2014年第8期38卷 60-63页

作者：杨彦佶陆景彬王于仨陈勇徐玉朋崔苇苇李炜李正伟李茂顺刘晓艳王娟韩大炜陈田祥李承奎霍嘉胡渭张艺陆波朱玥马克岩吴帝刘琰张子良尹国和王宇 College of Physics Jilin University Key Laboratory for Particle Astrophysics Institute of High Energy Physics Chinese Academy of Sciences (CAS) School of Physical Science and Technology Yunnan University

The Low Energy X-ray Telescope is one of the main payloads on the Hard X-ray Modulation Telescope satellite. Swept charge devices （SCDs） are selected as detectors for the Low Energy X-ray Telescope. As SCDs are sensitive to proton irradiation, irradiation tests were carried out on the HI-13 accelerator at the China Institute of Atomic Energy. The beam energy was measured to be 10 MeV at the SCD. The proton fluence delivered to the SCD was 3×10^8protons/cm2 over two hours. By comparing the performance before and after irradiation, it is concluded that proton irradiation affects both the dark current and the charge transfer inefficiency of the SCD. The energy resolution of the proton-irradiated SCD is 212 eV@5.9 keV at -60℃, while it before irradiated is 134 eV. Moreover, better performance can be reached by lowering the operating temperature of the SCD in orbit.

关键词： SCD HXMT proton irradiation energy resolution readout noise

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Damage Effect of Space proton irradiation with the Low Energy of 50-200 keV on Methyl Silicone Rubber

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Journal of Materials Science & Technology 2004年第6期20卷 751-754页

作者： LixinZHANG ChengminWANG ShiyuHE LaboratoryofSpaceMaterialsandEnvironmentEngineering HarbinInstituteofTechnologyHarbin150001China ElectricEngineeringDepartment ShanghaiJiaoTongUnirersityShanghai200030China

The damage effects and mechanisms of proton irradiation with 50-200 keV energy to space-grade methyl silicone rubber was performed using a ground-based simulator for space irradiation environment. The changes in surface morphology, mechanicai properties, cross-linking density, glass temperature, infrared attenuated total reflection spectrum, mass spectrum and pyrolysis gas chromatography-mass spectrum indicated that, under lower energy, the proton irradiation would induce cross-linking effect, resulting in an increase in tensile strengths and hardness of the methyl silicon rubber. However, after the irradiation of protons for more than 150 keV, the irradiation induced degradation, which decreased the tensile strengths and hardness, became a dominant effect. A macromolecular network destruction modei for the silicone rubber radiated vvith the protons was proposed.

关键词： Methyl silicone rubber proton irradiation Tensile strength Infrared spectrum Damage mechanism

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Effects of proton irradiation on the microstructure and mechanical properties of Amosic-3 silicon carbide minicomposites

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Journal of Materials Science & Technology 2019年第12期35卷 2935-2941页

作者： Chuanxin Liu Bo Chen Xiaoqiang Li Yahuan Zhao Science and Technology on Thermostructural Composite Materials Laboratory Northwestern Polytechnical University

One dimensional Amosic-3 silicon carbide fiber reinforced silicon carbide matrix composites(SiCf/SiC minicomposites) prepared by chemical vapor infiltration were irradiated with 2.8 Me V proton ions. The ion fluences were 1.0 × 10^17 and 1.5 × 10^17cm^-2 at room temperature and 300℃, respectively. The microstructure and mechanical properties were investigated before and after proton irradiation. Raman spectra showed no evident change in Amosic-3 fibers regardless of irradiation temperature, which is confirmed by high resolution transmission electron microscopy observation. Pyrolytic carbon interphase showed slightly expansion after 300℃ irradiation, however, no microstructure changes were observed in SiC matrix. Moreover, it can be deduced that no irradiation induced changes in mechanical properties were observed after present proton irradiation.

关键词： SiCf/SiC minicomposites proton irradiation Uniaxial tensile test Microstructure irradiation effect

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Effects of 50keV and 100keV proton irradiation on GaInP/GaAs/Ge Triple-Junction Solar Cells

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Plasma Science and Technology 2012年第7期14卷 647-649页

作者：王荣冯钊刘运宏鲁明 Key Laboratory of Beam Technology and Materials Modification of Ministry of Education Beijing Normal University College of Nuclear Science and Technology Beijing Normal University Beijing Radiation Center

GaInP/GaAs/Ge triple-junction solar cells were irradiated with 50 keV and 100 keV protons at fluences of 5 × 10^10 cm^-2, 1 × 10^11 cm^-2,1 × 10^12 cm^-2, and 1 × 10^13 cm^-2. Their performance degradation is analyzed using current-voltage characteristics and spectral response measurements, and then the changes in Isc, Voc, Pmax and the spectral response of the cells are observed as functions of proton irradiation fluence and energy. The results show that the spectral response of the top cell degrades more significantly than that of the middle cell, and 100 keV proton-induced degradation rates of Isc, Voc and Pmax are larger compared with 50 keV proton irradiation.

关键词： GaInP/GaAs/Ge solar cell proton irradiation spectral response

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Analysis of the decrease of two-dimensional electron gas concentration in GaN-based HEMT caused by proton irradiation

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Chinese Physics B 2021年第2期30卷 467-471页

作者：汤金金刘贵鹏宋家毓赵桂娟杨建红 School of Physical Science and Technology Lanzhou UniversityLanzhou 730000China National&Local Joint Engineering Laboratory of Light-conversion Materials and Technology School of Physical Science and TechnologyLanzhou UniversityLanzhou 730000China

Gallium nitride(Ga N)-based high electron mobility transistors(HEMTs)that work in aerospace are exposed to particles radiation,which can cause the degradation in electrical performance.We investigate the effect of proton irradiation on the concentration of two-dimensional electron gas(2 DEG)in Ga N-based HEMTs.Coupled Schr¨odinger’s and Poisson’s equations are solved to calculate the band structure and the concentration of 2 DEG by the self-consistency method,in which the vacancies caused by proton irradiation are taken into account.proton irradiation simulation for Ga N-based HEMT is carried out using the stopping and range of ions in matter(SRIM)simulation software,after which a theoretical model is established to analyze how proton irradiation affects the concentration of 2 DEG.Irradiated by protons with high fluence and low energy,a large number of Ga vacancies appear inside the device.The results indicate that the ionized Ga vacancies in the Ga N cap layer and the Al Ga N layer will affect the Fermi level,while the Ga vacancies in the Ga N layer will trap the two-dimensional electrons in the potential well.proton irradiation significantly reduced the concentration of 2 DEG by the combined effect of these two mechanisms.

关键词： proton irradiation GaN-based HEMT two-dimensional electron concentration

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Simulated study on the InP/InGaAs DHBT under proton irradiation

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Journal of Semiconductors 2016年第11期37卷 50-53页

作者：刘敏张玉明吕红亮张义门 School of Microelectronics Xidian UniversityKey Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China

A 3D model simulation of InP/InGaAs/InP DHBT is reported in this paper. A comprehensive set of built-in physical models are described, including Stratton＇s hydrodynamic model, high-fields mobility model and thermionic emission model. A mixed-mode environment is required for AC simulation instead of simulating an isolated HBT, in which the HBT is embedded in an external circuit, and the circuit voltage and current equations are solved along with the Poisson equation and transport equations. In AC simulation, simulator Sentaurus provides the computation of the small signal admittance Y matrix. From the results of Y matrix, the small signal equivalent circuit is constructed with the conductance and capacitance obtained from Y matrix, and the AC parameters, such as S- parameters, will be calculated. The small signal AC characteristics of InP/InGaAs DHBTs under proton irradiation are simulated with different fluences of proton irradiation. Simulation results show that the maximum oscillation frequency will be degraded when fluence of proton irradiation is increased.

关键词： heterojunction bipolar transistors proton irradiation InP/InGaAs cutoff frequency

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DAMAGE OF SILICONE RUBBER INDUCED BY proton irradiation

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Chinese Journal of Polymer Science 2003年第5期21卷 563-567页

作者：张丽新 aboratory of Space Materials and Environment Engineering Harbin Institute of Technology Harbin 150001 China

In this paper, the damage to methyl silicone rubber induced by irradiation with protons of 150 keV energy wasstudied. The surface morphology, tensile strength, Shore hardness, cross-linking density and glass transition temperaturewere examined. Positron annihilation lifetime spectrum analysis (PALS) was perfomed to reveal the damage mechanisms ofthe rubber. The results showed that tensile strength and Shore hardness of the rubber increased first and then decreased withincreasing irradiation fluence. The PALS characteristics τ_3 and I_3, as well as the free volume V_f, decreased with increasingirradiation fluence up to 10^(15) cm^(-2), and then increased slowly. It indicates that proton irradiation causes a decrease of freevolume in the methyl silicone rubber when the fluence is less than 10^(15)cm^(-2), while the free volume increases when thefluence is greater than 10^(15)cm^(-2). The results on cross-linking density indicate that the cross-linking induced by protonirradiation is dominant at smaller proton fluences, increasing the tensile strength and Shore hardness of the rubber, while thedegradation of rubber dominates at greater fluence, leading to a decrease of tensile strength and Shore hardness.

关键词： Silicone rubber proton irradiation Tensile strength Positron annihilation lifetime spectrum Free volume

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