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A Facile Photo-cross-linking Method for polymer Gate dielectrics and Their Applications in Fully Solution Processed Low Voltage Organic Field-effect Transistors on Plastic Substrate

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Chinese Journal of polymer Science 2018年第8期36卷 918-924页

作者： Ying Liu Jia-Qing Zhao Wen-Jian Sun Yu-Kun Huang Su-Jie Chen Xiao-Jun Guo Qing Zhang Shanghai Key Laboratory of Electrical Insulation and Thermal Aging Department of Polymer Science and EngineeringSchool of Chemistry and Chemical EngineeringShanghai Jiao Tong University Department of Electronic Engineering School of Electronic Information and Electrical EngineeringShanghai Jiao Tong University

A simple and effective photochemical method was developed for cross-linking of polymer gate dielectrics. Laborious synthetic processes for functionalizing polymer dielectrics with photo-cross-linkable groups were avoided. The photo-cross-linker, BBP-4, was added into host polymers by simple solution blending process, which was capable of abstracting hydrogen atoms from polymers containing active C--H groups upon exposure to ultraviolet （UV） radiation. The cross-linking can be completed with a relatively long wavelength UV light （365 nm）. The approach has been applied to methacrylate and styrenic polymers such as commercial poly（methylmethacrylate）（PMMA）, poly（iso-butylmethacrylate）（PiBMA） and poly（4-methylstyrene）（PMS）. The cross-linked networks enhanced dielectric properties and solvent resistance of the thin films. The bottom-gate organic field-effect transistors （OFETs） through all solution processes on plastic substrate were fabricated. The OFET devices showed low voltage operation and steep subthreshold swing at relatively small gate dielectric capacitance.

关键词： Organic field-effect transistors Solution processed polymer dielectric Cross-linking Photochemistry

Electron transport in solution-grown TIPS-pentacene single crystals:Effects of gate dielectrics and polar impurities

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Chinese Chemical Letters 2016年第12期27卷 1781-1787页

作者： Zhuo-Ting Huang Guo-Biao Xue Jia-Ke Wu Shuang Liu Huan-Bin Li Yu-Hui Yang Feng Yan Paddy K.L.Chan Hong-Zheng Chen Han-Ying Li MOE Key Laboratory of Macromolecular Synthesis and Functionalization State Key Laboratory of Silicon Materials Department of Polymer Science and Engineering Zhejiang University Hangzhou 310027 China Department of Applied Physics and Materials Research Centre The Hong Kong Polytechnic University Hong Kong China Department of Mechanical Engineering The University of Hong Kong Hong Kong China

The n-channel behavior has been occasionally reported in the organic field-effect transistors （OFETs） that usually exhibit p-channel transport only. Reconfirmation and further examination of these unusual device performances should deepen the understanding on the electron transport in organic semiconductors. 6,13-bis（triisopropyl-silylethynyl） pentacene （TIPS-pentacene）, a widely examined p-channel material as Au is used for source-drain electrodes, has recently been reported to exhibit electron transport when grown from non-polar solvent on divinyltetramethyldisiloxanebis （benzocy- clobutene）（BCB） dielectric, spurring the study on this unusual electron transport. This paper describes FET characteristics of solution-grown TlPS-pentacene single crystals on five polymer gate dielectrics including polystyrene （PS）, poly（methyl methacrylate）（PMMA）, poly（4-vinyl phenol）（PVP）, poly（vinyl alcohol）（PVA） and poly（vinylidene fluoride-trifluoroethylene-chlorofluoroethylene）（P（VDF-TrFE-CFE））. In addition to the p-channel behavior, electron transport occurs in the crystals on PMMA, PS, thick PVA （40 nm） and a bilayer dielectric of PMMA on P（VDF-TrFE-CFE）, while does not on PVP and thin PVA （2 nm）. The two distinct FET characteristics are consistent with the previous reported trap effect of hydroxyl groups （in PVP and PVA） and reduced injection barrier by Na~ ions （as impurity in PVA）. The highest electron mobility of 0.48 cm2 V-1 s-1 has been achieved in the crystals on PMMA. Furthermore, the electron transport is greatly attenuated after the crystals are exposed to the vapor of a variety of polar solvents and the attenuated electron transport partially recovers if the crystals are heated, indicating the adverse effect of polar impurities on electron transport. By reconfirming the n-channel behavior in the OFETs based on TIPS-pentacene, this work has implications for the design of n-channel and ambipolar OFETs.

关键词： TIPS-pentacene single crystal Electron transport polymer dielectric Polar solvent Organic field-effect transistor

Pendant Group Effect of polymeric dielectrics on the Performance of Organic Thin Film Transistors

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Chinese Journal of Structural Chemistry 2021年第11期40卷 1541-1549,1410页

作者： HUANG Chong-Yu FENG Shi-Yu HUANG Wei-Guo State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou 350002China University of Chinese Academy of Sciences Beijing 100049China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350002China

polymer dielectric is superior to its inorganic counterparts due to not only the low cost and intrinsic flexibility,but also the readily tunable dielectric constant,surface charge trap density,charge ejection and releasing ability and dipole moment,and all these properties play decisive roles in regulating the characteristic and performances of organic thin film transistors(OTFT).However,systematical studies on the relationship between structure and properties of polymeric dielectrics are *** this end,a series of polymeric dielectrics with well-defined linkages(ester or amide bonds)and predesigned pendant groups(alkyl-and aromatic-groups)are synthesized in high *** studies show that the polyamide dielectrics exhibit higher dielectric constant,surface charge trapping density,and better charge storage capability than corresponding polyester ***,increasing theπelectron delocalization of the pendant groups generally benefits the charge storage property and transistor memory *** calculation reveals that the hydrogen bonding between the linkage groups and the energy alignment between polymeric dielectric and semiconductor are responsible for the observed performance differences of OTFT with different polymeric *** results may shine light on the design of polymeric dielectrics for OTFTs with different applications.

关键词： polymer dielectric organic thin film transistor hydrogen bonding π-electron delocalization noncovalent interaction

Achieving Synergistic Improvement in dielectric and Energy Storage Properties of All-Organic Poly(Methyl Methacrylate)-Based Copolymers Via Establishing Charge Traps

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Energy & Environmental Materials 2024年第2期7卷 308-319页

作者： Guanghu He Huang Luo Chuanfang Yan Yuting Wan Dang Wu Hang Luo Yuan Liu Sheng Chen Key Laboratory of polymeric Materials and Application Technology of Hunan Province College of ChemistryXiangtan UniversityXiangtan 411105China State Key Laboratory of Powder Metallurgy Central South UniversityChangsha 410083China Guangdong University of Petrochemical Technology Maoming 525000China

How to achieve synergistic improvement of permittivity(ε_(r))and breakdown strength(E_(b))is a huge challenge for polymer ***,for the first time,theπ-conjugated comonomer(MHT)can simultaneously promote theε_(r)and E_(b)of linear poly(methyl methacrylate)(PMMA)*** PMMA-based random copolymer films(P(MMA-co-MHT)),block copolymer films(PMMA-b-PMHT),and PMMA-based blend films were prepared to investigate the effects of sequential structure,phase separation structure,and modification method on dielectric and energy storage properties of PMMA-based dielectric *** a result,the random copolymer P(MMA-coMHT)can achieve a maximumε_(r)of 5.8 at 1 kHz owing to the enhanced orientation polarization and electron *** electron injection and charge transfer are limited by the strong electrostatic attraction ofπ-conjugated benzophenanthrene group analyzed by the density functional theory(DFT),the discharge energy density value of P(MMA-co-PMHT)containing 1 mol%MHT units with the efficiency of 80%reaches15.00 J cm^(-3)at 872 MV m^(-1),which is 165%higher than that of pure *** study provides a simple and effective way to fabricate the high performance of polymer dielectrics via copolymerization with the monomer of P-type semi-conductive polymer.

关键词： dielectric capacitor electrical properties energy density polymer dielectric semiconductor polymer

Impact of oxygen-containing carbonyl and ether groups on dielectric properties of poly(oxa)norbornene cyclic olefins

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Journal of Advanced dielectrics 2023年第4期13卷 65-68页

作者： Chao Wu Ajinkya A.Deshmukh Lihua Chen Rampi Ramprasad Gregory A.Sotzing Yang Cao Institute of Materials Science University of Connecticut StorrsCT 06269USA School of Materials Science and Engineering Georgia Institute of Technology AtlantaGA 30332USA Department of Electrical and Computer Engineering University of Connecticut StorrsCT 06269USA

Flexible dielectric polymers that can withstand high electric field and simultaneously have high dielectric constant are desired for high-density energy ***,we systematically investigated the impact of oxygen-containing ether and carbonyl groups in the backbone structure on dielectric properties of a series of cyclic *** comparison to the influence of the-CF3 pendant groups that had more impact on the dielectric constant rather than the band gap,the change of the backbone structure affected both the dielectric constant and band *** one polymer with ether and carbonyl groups in the backbone has the largest band gap and highest discharge efficiency,while it has the lowest dielectric *** polymer without any ether groups in the backbone has the smallest band gap and lowest discharge efficiency,but it has the highest dielectric *** that have no dipolar relaxation exhibit an inversely correlated dielectric constant and band *** the dipolar relaxation through rational molecular structure design can be a novel way to break through the exclusive constraint of dielectric constant and band gap for high-density energy storage.

关键词： polymer dielectric band gap glass transition conduction energy density DFT