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A New Approach to plasma cvd of TiO_2 Photocatalyst on γ-Al_2O_3 Pellet Filled in Dielectric Barrier Discharges at Atmospheric Pressure

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plasma Science and Technology 2004年第6期6卷 2546-2548页

作者：朱爱民聂龙辉张秀玲石川宋志民徐勇 Laboratory of plasma Physical Chemistry Dalian University of Technology Dalian 116024 China Center for Nano Materials and Science Dalian University of Technology Dalian 116024 China Laboratory of plasma Physical Chemistry Dalian University of Technology Dalian 116024 China

A supported TiO2/γ-Al2O3 photocatalyst has been prepared by γ-Al2O3 pellet-filled dielectric barrier discharges induced plasma cvd at atmospheric pressure and room temperature. The TiO2/γ-Al2O3 photocatalyst exhibits higher photocatalytic activity than Degussa P25, and much higher photocatalytic activity than that prepared by thermal cvd.

关键词： plasma cvd dielectric barrier discharges photocatalyst

PREPARATION OF IODINE-INCLUDED CARBON USING RF plasma cvd

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Acta Metallurgica Sinica(English Letters) 2005年第3期18卷 423-426页

作者： Y. Sakamoto M. Takaya T. Uchiyama Department of Precision Engineering Faculty of Engineering Chiba Institute of Technology Tsudanuma Narashino Chiba 275-0016 JapanDepartment of Precision Engineering Faculty of Engineering Chiba Institute of Technology Tsudanuma Narashino Chiba 275-0016 JapanGraduate School Department of Precision Engineering Faculty of Engineering Ch iba Institute of Technology Tsudanuma Narashino Chiba 275-0016 Japan

For the aim of synthesis of the carbon-iodine compound, the preparation of iodin e-included carbon using RF plasma cvd was studied. Iodine-included carbon was sy nthesized on Si substrate using ICP type RF plasma cvd apparatus. C2H5OH and I2 dissolved C2H5OH was used as reactant gases. As a result, surface morphologies o f Iodine included carbon films showed flat surfaces for each samples. On the str ucture of films estimated by Raman spectroscopy, amorphous carbon was recognized . And I2 peaks were observed in XPS spectra. As a result of friction test, frict ion coefficient of the sample growth with C2H5OH showed about 0.45. On the other hand, that of the sample with I2-C2H5OH showed about 0.3 and decrease of fricti on coefficient was recognized. Iodine inclusion for carbon materials can be achi eved by RF plasma cvd using an I2-C2H5OH reactant. The coefficient of iodine-inc luded carbon showed lower than of without iodine

关键词： carbon iodine plasma cvd tribological property

Low Temperature plasma cvd Grown Graphene by Microwave Surface-Wave plasma cvd Using Camphor Precursor

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Journal of Physical Science and Application 2016年第2期6卷 34-38页

作者： Hideo Uchida Hare Ram Aryal Sudip Adhikari Masayoshi Umeno Department of Electronics and Information Engineering Chubu University Matsumoto 1200 Kasugai Aichi 487-5801 Japan Institute for General Research of Science Chubu University Matsumoto 1200 Kasugai A ichi 487-5801 Japan

Hydrocarbon precursor such as methane has been widely used to grow graphene films and the methods of growing quality graphene films are dominated by thermal cvd （chemical vapor deposition） system. Graphene films grown by plasma process are generally highly defective which in turns degrade the quality of the films. Here, using a green precursor, camphor we demonstrate a simple and economical method to get high-quality graphene film on copper substrate by micro wave surface-wave plasma cvd at relatively low temperature 550℃. Graphene film grown using camphor shows superior quality than that of the film grown using methane. Results revealed that camphor precursor is a good alternative to hydrocarbon precursors for graphene research.

关键词： Camphor plasma cvd quality graphene plasma induced defects.

plasma enhanced diamond deposition on steel and Si substrates

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Acta Metallurgica Sinica(English Letters) 2009年第5期22卷 321-329页

作者： Y.S. Li Y. Tang Wo Chen Q. Yang C.Xiao A. Hirose plasma PhYsics Laboratory University of Saskatchewan Saskatoon SK S7N 5E2 Canada Department of Mechanical Engineering University of Saskatchewan Saskatoon S7N 5A9 Canada

Diamond growth on Fe-Cr-Al-Si steel and Si substrates was comparatively investigated in microwave plasma enhanced chemical vapor deposition （MPcvd） reactor with different deposition parameters. Adherent nanocrystalline diamond films were directly deposited on this steel substrate under a typical deposition condition, whereas microcrystalline diamond films were produced on Si wafer. With increasing CH4 concentration, reaction pressure, or the total gas flow rate, the quality of nanocrystalline diamond films formed on Fe-Cr-Al-Si substrates is gradually deteriorated in terms of density and adhesion. This impaired diamond quality on steels is primarily associated with a combined effect by the substrate composition and the specific process conditions that favor excessive nucleation of diamond.

关键词： plasma cvd Diamond film Steel Si

Controlled Growth of Carbon Nanotubes and its Field Emission Properties

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Chinese Physics Letters 2003年第11期20卷 1991-1993页

作者：樊志琴张兵临姚宁鲁占玲杨仁娥马丙现 DepartmentofMathematicsandPhysics ZhengzhouInstituteofTechnologyZhengzhou450052 DepartmentofPhysics ZhengzhouUniversityZhengzhou450052

Uniform films of aligned carbon nanotubes were grown on a patterned Ni coated ceramic substrate by microwave plasma chemical vapour deposition (MWPcvd). A laser writing technique was used to make some patterns on the substrate. The controlled selective growth of nanotubes on the patterned substrate can be obtained directly during the reaction process in the MWPcvd chamber. The Raman spectrum shows a good graphitization of the carbon nanotubes. In the field emission test, turn-on field of 1 V/μm and emission current density of 5 mA/cm~2 at 3.3 V/μm were achieved.

关键词： field emission Reaction processing Substrates Current density Carbon Nanotubes Nanotubes plasma cvd

Growth and Characterization of the Laterally Enlarged Single Crystal Diamond Grown by Microwave plasma Chemical Vapor Deposition

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Chinese Physics Letters 2018年第7期35卷 122-125页

作者：任泽阳张金风张进成许晟瑞张春福苏凯李姚郝跃 State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology School of MicroelectronicsXidian University

Laterally enlarged single crystal diamond is grown on （001） diamond substrates by microwave plasma chemical vapor deposition. Based on the largest side-to-side width of the seed of 7.5 mm, we achieve the as-grown epilayer with the width of about 10mm between the same two sides. The luminescence difference between the broadened part of the single crystal diamond and the vertically epitaxial part is investigated by characterizing the vertical cross section of the sample, and the possible growth mechanism is suggested. Vertical epitaxy on the top （001） surface and lateral growth on the side surfaces occur simultaneously, and thus the growth fronts along the two directions adjoin and form a coalescence zone extending from the edge of the substrate towards the edge of the expanded single crystal diamond top surface. The luminescence intensity of the nitrogen-vacancy center is relatively high in the coalescence zone and a laterally grown part right below, which are attributed mainly to the higher growth rate. However, stress change and crystal quality change are negligible near the coalescence zone.

关键词： plasma cvd

Stress control of silicon nitride films deposited by plasma enhanced chemical vapor deposition

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Optoelectronics Letters 2016年第4期12卷 285-289页

作者：李东玲冯小飞温志渝尚正国佘引 National Key Laboratory of Fundamental Science of Novel Micro/Nano Device and System Technology Chongqing University Chongqing 400030 China Key Laboratory of Optoelectronic Technology and System of the Education Ministry of China Chongqing University Chongqing 400030 China No.24 Reaearch Institute of China Electronics Technology Group Corporation Chongqing 400060 China

Stress controllable silicon nitride(Si Nx) films deposited by plasma enhanced chemical vapor deposition(PEcvd) are reported. Low stress Si Nx films were deposited in both high frequency(HF) mode and dual frequency(HF/LF) mode. By optimizing process parameters, stress free(-0.27 MPa) Si Nx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited Si Nx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit(IC), micro-electro-mechanical systems(MEMS) and bio-MEMS.

关键词： Deposition Deposition rates Integrated circuits MEMS Nitrides Optical properties plasma cvd Refractive index Silicon nitride Stresses Vapor deposition