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Perovskite photodetector-based single Pixel color camera for artificial vision

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Light(Science & Applications) 2023年第4期12卷 509-511页

作者： Chaohao Chen Ziyuan Lie Lan Fu School of Electrical and Data Engineering Faculty of Engineering and Information TechnologyThe University of Technology SydneySydneyNSW 2007Australia Australlian Research Council Centre of Excellence for Transformative Meta-Optical Systems Department of Electronic Materials EngineeringResearch School of PhysicsThe Australian National UniversityCanberraACT 2600Australia MoE Key Lab of Photoelectronic Imaging Technology and System School of Optics and PhotonicsBeijing Institute of TechnologyBeijing 100081China

Narrowband red,green,blue self-filtering perovskite photodetectors and a broadband white photodetector are incorporated into a single Pixel imaging camera to mimic the long-,medium-,and short-wavelength cone cells and... 详细信息

关键词： artificial Pixel filtering

Mobility impact on compensation performance of AMOLED Pixel circuit using IGZO TFTs

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Journal of Semiconductors 2019年第2期40卷 33-38页

作者： Congwei Liao Shenzhen Graduate School Peking University

The suitability of indium gallium zinc oxide(IGZO) thin-film transistors(TFT) for implementation of active matrix display of organic light emitting diodes(AMOLED) compensation Pixel circuits is addressed in this paper. In particular, the impact of mobility on compensating performance for the implementation in AMOLED Pixel circuits is investigated. Details of the effective mobility modeling using the power law of gate-to-source voltage are provided, and parameters are extracted according to the measured current-to-voltage data of IGZO TFT samples. The investigated AMOLED Pixel circuit consists of 4 switching TFTs, 1 driving TFT, and 1 capacitor. A "source-follower" structure is used for the threshold voltage extraction of the driving transistor. A new timing diagram is proposed; thus the current error of the Pixel circuit is almost independent of the effective mobility. But, to improve the precision of the threshold voltage extraction of the driving transistor, the mobility is required to be greater than5 cm^2 V^(-1) s^(-1). On the other hand, the optimized storage capacitance is reversely proportional to the effective mobility. Thus, the layout area of the Pixel circuit can be decreased from 100 × 100 to 100 × 68 μm2, with the effective mobility increased from 10 to50 cm^2 V^(-1) s^(-1). Therefore, IGZO TFT is a good alternative backplane technology for AMOLED displays, and a higher effective mobility is preferred for high compensation performance and compact layout.

关键词： IGZO TFT Pixel circuit mobility

Equivalence of a Bit Pixel Image to a Quantum Pixel Image

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Communications in Theoretical Physics 2015年第11期64卷 501-506页

作者： Carlos Ortega Laurel DONG Shi-Hai M.Cruz-Irisson ESIME-Culhuacan Instituto Politicnico Nacional CIDETEC Instituto Politecnico NacionalUPALM

We propose a new method to transform a Pixel image to the corresponding quantum-Pixel using a qubit per Pixel to represent each Pixels classical weight in a quantum image matrix weight.All qubits are linear superposition,changing the coefficients level by level to the entire longitude of the gray scale with respect to the base states of the qubit.Classically,these states are just bytes represented in a binary matrix,having code combinations of 1 or 0 at all Pixel locations.This method introduces a qubit-Pixel image representation of images captured by classical optoelectronic methods.

关键词： qubit Pixel quantum image processing image represe

Seasonal changes in testicular ultrasonogram Pixel-intensity and their association with semen characteristics in rams

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Asian pacific Journal of Reproduction 2020年第1期9卷 49-54页

作者： Mohamed Gamal Hedia Mohamed Shehata El-Belely Sayed Taha Ismail Amal Mahmoud Abo El-Maaty Department of Theriogenology Faculty of Veterinary MedicineCairo UniversityGizaEgypt Department of Animal Reproduction and AI Veterinary DivisionNational Research CenterDokkiGizaEgypt

Objective:To establish reference values for Pixel intensity of testicular ultrasonogram of rams in breeding and non-breeding seasons,and to investigate if the seasonal changes in testicular echogenicity and heterogeneity are associated with semen characteristics.Methods:Five Awassi rams aged 3-5 years old and weighing 45-60 kg were subjected to ultrasonographic scanning of the testes twice monthly for one year(from January 2018 to December 2018),together with semen collection and evaluation of ejaculate volume,sperm motility,sperm concentration,sperm morphology and viability.The ejaculate volume was determined in a graduated collection tube(scale of 0.1 mL).Mass and individual sperm motility was expressed in percentage of motile spermatozoa under optical microscope equipped with a warm stage.Sperm concentration was determined by using a Neubauer chamber.Semen smears stained with eosin-nigrosin were used to determine the percentage of live spermatozoa and sperm cell morphology by using a light microscope.Results:The mean testicular Pixel intensity was the lowest in winter and increased gradually from breeding season to non-breeding season,reaching its maximum value in summer(PPixel intensity was found to have a significant negative correlation with progressive motility(r=-0.605,PPixel intensity values of testicular ultrasonogram in rams undergo marked seasonal changes that are associated with fluctuations in photoperiod and ambient temperature.The resulting values of testicular echogenicity(Pixel intensity)throughout the year provide useful reference values for predicting the testicular function in Awassi rams.

关键词： Testes Echotexture Pixel intensity Semen Season Rams

A Pixel circuit with reduced switching leakage for an organic light-emitting diode

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Journal of Semiconductors 2012年第12期33卷 81-85页

作者：王欢王志功冯军李文渊王蓉苗澎 Institute of RF-&OE-ICs Southeast University

This paper presents a Pixel circuit with reduced switching leakage for OLED microdisplays. A self- referenced feedback loop is designed to track the node voltages for leakage reduction during the holding period. A longer holding time using a smaller storage capacitor can be achieved using the leakage reduction technique. An experimental system based on a 60 ~ 80 Pixel matrix is fabricated in a 0.35μm CMOS process. The area of the Pixel circuit is only 15 × 1 5 μ2. According to the measured results, the Pixel circuit achieves a holding time of longer than 500 ms and the system exhibits a satisfied accuracy and linearity within a Pixel current range from 100 pA to 3 nA.

关键词： Pixel OLED leakage CMOS

Development of small Pixel HgCdTe infrared detectors

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Chinese Physics B 2019年第3期28卷 17-25页

作者：刘铭王丛周立庆 North China Research Institute of Electroptics Beijing 100015China

After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military tracking, military reconnaissance, infrared guidance, infrared warning, weather forecasting, and resource detection. Further development in infrared applications requires future HgCdTe infrared detectors to exhibit features such as larger focal plane array format and thus higher imaging resolution. An effective approach to develop HgCdTe infrared detectors with a larger array format size is to develop the small Pixel technology. In this article, we present a review on the developmental history and current status of small Pixel technology for HgCdTe infrared detectors, as well as the main challenges and potential solutions in developing this technology. It is predicted that the Pixel size of long-wave HgCdTe infrared detectors can be reduced to5 μm, while that of mid-wave HgCdTe infrared detectors can be reduced to 3 μm. Although significant progress has been made in this area, the development of small Pixel technology for HgCdTe infrared detectors still faces significant challenges such as flip-chip bonding, interconnection, and charge processing capacity of readout circuits. Various approaches have been proposed to address these challenges, including three-dimensional stacking integration and readout circuits based on microelectromechanical systems.

关键词： HgCdTe infrared detector small size Pixel readout circuit

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基于影像快速处理系统的DSM生产方法

实验技术与管理 2015年第10期32卷 93-96页

作者：杨自力林先津华侨大学信息化建设与管理处福建泉州362021

充分发挥新型影像快速处理系统Pixel factory与Pixel grid的优势,利用资源三号卫星立体影像,提供一套可行、高效的DSM生产方法,并用实际生产数据进行试验。试验结果表明:利用影像快速处理系统Pixel factory与Pixel grid,可高效、高自动... 详细信息

充分发挥新型影像快速处理系统Pixel factory与Pixel grid的优势,利用资源三号卫星立体影像,提供一套可行、高效的DSM生产方法,并用实际生产数据进行试验。试验结果表明:利用影像快速处理系统Pixel factory与Pixel grid,可高效、高自动化地生产高精度数字表面模型DSM,可以为大规模的进行DSM与DEM快速生产提供一定的经验指导与技术支持。

关键词：影像处理 Pixel factory Pixel grid 数字表面模型数字高程模型

Simulation study of energy resolution with changing Pixel size for radon monitor based on Topmetal-Ⅱ^- TPC

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Nuclear Science and Techniques 2019年第1期30卷 49-57页

作者： Meng-Yao Huang Hua Pei Xiang-Ming Sun Shu-Guang Zou Department of Physics and Astronomy Iowa State University PLAC Key Laboratory of Quark & Lepton Physics (MOE)Central China Normal University College of Information Science and Engineering Henan University of Technology

In this paper, we study how Pixel size influences energy resolution for a proposed Pixelated detector—a high sensitivity, low cost, and real-time radon monitor based on a Topmetal-Ⅱ^- time projection chamber(TPC). This monitor was designed to improve spatial resolution for detecting radon alpha particles using Topmetal-Ⅱ^- sensors assembled by a 0.35 lm CMOS integrated circuit process.Owing to concerns that small Pixel size might have the side effect of worsening energy resolution due to lower signalto-noise ratio, a Geant4-based simulation was used to investigate the dependence of energy resolution on Pixel sizes ranging from 60 to 600 lm. A non-monotonic trend in this region shows the combined effect of Pixel size and threshold on Pixels, analyzed by introducing an empirical expression. Pixel noise contributes 50 keV full-width at half-maximum energy resolution for 400 lm Pixel size at 1–4σ threshold that is comparable to the energy resolution caused by energy fluctuations in the TPC ionization process( ~20 keV). The total energy resolution after combining both factors is estimated to be 54 keV for a Pixel size of 400 lm at 1–4σ threshold. The analysis presented in this paper would help choosing suitable Pixel size for future Pixelated detectors.

关键词： Geant4 Energy resolution Pixel size Radon monitor Topmetal

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基于软硬属性转换的遥感图像亚像元定位算法

测绘学报 2016年第4期45卷 503-503页

作者：王群明香港理工大学土地测量与地理资讯学系兰卡斯特大学兰卡斯特环境中心

混合像元普通存在于遥感图像之中,给遥感数据的解译带来了较大挑战。近些年发展起来的混合像元分解技术能估计混合像元内各类地物的混合比例,却不能估计各类地物的具体分布。亚像元定位（sub-Pixel mapping,SPM）正是在此问题基础上发... 详细信息

混合像元普通存在于遥感图像之中,给遥感数据的解译带来了较大挑战。近些年发展起来的混合像元分解技术能估计混合像元内各类地物的混合比例,却不能估计各类地物的具体分布。亚像元定位（sub-Pixel mapping,SPM）正是在此问题基础上发展起来的一种新型技术。SPM将原始混合像元分割成多个亚像元并估计各亚像元的地物类别,其本质上是一种更高空间分辨率下的硬分类技术。

关键词：亚像元遥感图像混合像元高空间分辨率 Pixel 属性值分类技术混合比例遥感数据变化检测