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Influence of Al doping on the crystal structure,optical properties,and photodetecting performance of ZnO film

Progress in Natural Science:Materials International 2020年第1期30卷 28-34页

作者： Ni'matul Azizah Shibghatullah Muhammady Muhammad Abiyyu Kenichi Purbayanto Eka Nurfani Toto Winata Euis Sustini Rena Widita Yudi Darma Department of Physics Faculty of Mathematics and Natural SciencesInstitut Teknologi Bandung Materials Engineering Program Institut Teknologi SumateraTerusan RyacuduWay HuiJati Agung

The structural,optical,and electrical properties of undoped and Al-doped ZnO films deposited on p-Si(001)substrate were studied using DC-unbalanced magnetron *** study is motivated by the absence of detail reports concerning the orbital states inducing the optical bandgap(Eg) ***,the influences of Al on the possible modification of point defect and the photodetecting performance are highlighted to offer guidelines for better development in ZnO-based *** was found that the Al doping reduced the grain *** doping increased the lattice parameters and slightly decreased the local-symmetry distortion at *** the absorbance spectra,the doping increased Eg of ZnO film(3.28-3.36 eV),induced by the Burstein-Moss *** the density-functional calculation,the Burstein-Moss effect induced Egfrom the valence band maximum(VBM) to Fermi level located above the lowest Zn 4s conduction *** the photoluminescence spectra,the undoped film showed the transitions from O vacancy,Zn interstitial,and free-exciton states to the *** doped film showed the transitions from Zn interstitial to O interstitial and few Zn vacancy states at the cost of O ***,the energy level of free-exciton states slightly ***,O interstitials increased the lattice *** the electrical properties,the doping enhanced the ultraviolet-region photo-to-dark-current ratio up to 3.044 V,leading to the photodetecting sensitivity *** study emphasizes the significant effect of Al doping on the optical absorbance,point-defect evolution,and photodetecting performance of ZnO film for low-voltage ultraviolet photodetector applications.

关键词： ZnO Optical properties Point defect photodetecting Local-symmetry distortion

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Near-Infrared Si_(0.7)Ge_(0.3)/Si p-i-n Photodetector Fabricated on SOI in CMOS Technology

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Journal of Semiconductors 2002年第1期23卷 16-20页

作者：郭辉郭维廉郑云光黎晨陈培毅李树荣吴霞宛天津大学电信工程学院天津300072 清华大学微电子研究所北京100084

A novel lateral Si 0 7 Ge 0.3 /Si p i n photodetector which is suitable for high speed operation with low voltage and at 0 7～1 1μm wavelengths is *** fabrication of the device is carried out on a SOI substrate by using a UHV/CVD SiGe/Si heteroepitaxy technology and a CMOS/SOI *** at 3 0V,the photodetector attained a responsivity of 0 38A/W at its peak response wavelength 0 93μm and exhibited extremely low dark current of less than 1nA,small parasitic capacitance of less than 1 0pF,and short rise time of 2 *** distinct characteristics and process compatibility make it applicable to integrate the photodetector with other silicon based devices to meet the needs of high speed near infrared signal detections.

关键词： SOI SiGe p i n photodetector photodetecting

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