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Transition of photoconductive and photovoltaic operation modes in amorphous Ga_2O_3-based solar-blind detectors tuned by oxygen vacancies

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Chinese Physics B 2019年第2期28卷 71-76页

作者： Yan-Fang Zhang Xuan-Hu Chen Yang Xu Fang-Fang Ren Shu-Lin Gu Rong Zhang You-Dou Zheng Jian-Dong Ye Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering Nanjing University Wuxi Institute of Technology Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics Nanjing University

We report on the transition of photovoltaic and photoconductive operation modes of the amorphous Ga_2O_3-based solar-blind photodetectors in metal–semiconductor–metal(MSM) configurations. The conversion from Ohmic to Schottky contacts at Ti/Ga_2O_3 interface is realized by tuning the conductivity of amorphous Ga_2O_3 films with delicate control of oxygen flux in the sputtering process. The abundant donor-like oxygen vacancies distributed near the Ti/Ga_2O_3 interface fascinate the tunneling process across the barrier and result in the formation of Ohmic contacts. As a consequence, the serious sub-gap absorption and persistent photoconductivity(PPC) effect degrades the performance of the photoconductive detectors. In contrast, the photovoltaic device with a Schottky contact exhibits an ultra-low dark current less than 1 pA,a high detectivity of 9.82×10^(12) cm·Hz^(1/2)·W^(-1), a fast response time of 243.9 μs, and a high ultraviolet C(UVC)-toultraviolet A(UVA) rejection ratio of 103. The promoting performance is attributed primarily to the reduction of the subgap states and the resultant suppression of PPC effect. With simple architecture, low fabrication cost, and easy fusion with modern high-speed integrated circuitry, these results provide a cost-effective way to realize high performance solar-blind photodetectors towards versatile practical applications.

关键词： amorphous gallium oxide solar-blind photodetector photovoltaic photoconductive

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CARRIER PHOTOGENERATION IN POLY(N-VINYL-CARBAZOLE)-BASED photoconductive THIN-FILM DEVICES

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Chinese Journal of Polymer Science 2006年第6期24卷 553-558页

作者： Hui Jin Yan-bing Hou Xian-guo Meng Feng Teng Key Laboratory of Luminescence and Optical Information Ministry of Education Institute of Optoelectronie Teehnology Beijing Jiaotong University Beijing 100044 China

In this paper, photoexcitation processes in the bilayer devices based on inorganic materials and poly（N-vinylcarbazole）（PVK） were investigated. In order to clarify the roles of inorganic materials in photoconductive properties of bilayer devices, TiO2 and ZnS were chosen to combine with PVK. A model for generation of photocurrent （Iph） in single layer device of PVK was obtained. It is deduced that the recombination rate constant （Pcomb） and the ionization rate constant （y） ofexcitons should be considered as the most important factors for Iph. For inorganic materials （TiO2 or ZnS）/PVK bilayer devices, in reverse bias of-4 V, the photocurrent of 115 mA/cm^2 in the TiO2/PVK device was observed, but the photocurrent in the ZnS/PVK device was only 10 mA/cma under the illumination light of 340 nm and the light intensity of 14.2 mW/cm^2. The weaker photocurrent is attributed to the absorption of ZnS within UV region and the energy offset at the interface between PVK and ZnS, which impedes the transport of charge carriers.

关键词： Polymer Inorganic semiconductor photoconductive Photogeneration.

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Low-temperature GaAs-based plasmonic photoconductive terahertz detector with Au nano-islands

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Photonics Research 2020年第9期8卷 1448-1456页

作者： HIRONARU MURAKAMI TOMOYA TAKARADA AND MASAYOSHI TONOUCHI Institute of Laser Engineering Osaka University2-6 Yamada-okaSuitaOsaka 565-08771Japan

We have fabricated low-temperature grown GaAs(LT-GaAs)-based plasmonic photoconductive antennas by RF sputtering of Au nanoparticles and have evaluated their terahertz detection *** surface plasmon resonance enhances the electric fields near the surface and increases the optical absorption of *** resonance frequency depends on the density of electrons,the effective electron mass,and the size and shape of the ***,we tried to develop a high-sensitivity LT-GaAs photoconductive detector(PCD),which is effective over a wide range of wavelengths,by RF sputtering of Au nano-islands with a variety of aspect ratios from 1.2 to 5.1 on the dipole gap region of the *** a result,we succeeded in increasing the sensitivity by 29%and 40%in the amplitude of observed terahertz pulse for 800 nm and 1560 nm femtosecond laser excitations,respectively.

关键词： photoconductive antennas plasmon

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Fabrication and Characterization of High-Voltage Ultra-Fast GaAs photoconductive Switch

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Journal of Semiconductors 1998年第6期 38-42页

作者： Shi Wei 1, Liang Zhenxian 2, Xu Chuanxiang 2(1 Applied Physics Department, Xi’an University of Technology, Xi’an 710048) (2 Institute of Electrical Insulation, Xi’an Jiaotong University, Xi’an 710049)

１ＩｎｔｒｏｄｕｃｔｉｏｎＰｈｏｔｏｃｏｎｄｕｃｔｉｖｅｓｅｍｉｃｏｎｄｕｃｔｏｒｓｗｉｔｃｈｅｓａｒｅｃｏｍｍｏｎｌｙｕｓｅｄａｓｊｉｔｅｒ－ｆｒｅｅ，ｌｏｗｉｎｄｕｃ－ｔａｎｃｅｓｗｉｔｃｈｅｓｆｏｒｐｕｌｓｅｄ... 详细信息

１ＩｎｔｒｏｄｕｃｔｉｏｎＰｈｏｔｏｃｏｎｄｕｃｔｉｖｅｓｅｍｉｃｏｎｄｕｃｔｏｒｓｗｉｔｃｈｅｓａｒｅｃｏｍｍｏｎｌｙｕｓｅｄａｓｊｉｔｅｒ－ｆｒｅｅ，ｌｏｗｉｎｄｕｃ－ｔａｎｃｅｓｗｉｔｃｈｅｓｆｏｒｐｕｌｓｅｄｐｏｗｅｒａｐｐｌｉｃａｔｉｏｎｓ...

关键词： GaAs photoconductive Ultra-Fast High-Voltage Switch and Fabrication Characterization

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DEVELOPMENT OF photoconductive SWITCH AND ITS APPLICATIONS

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Journal of Electronics(China) 1995年第1期12卷 79-83页

作者：袁乃昌阮成礼林为干 National University of Defence Science of China Changsha 410073 University of Electronic Science and Technology of China Chengdu 610054

The picosecond photoconductive switches are developed and used to detect the pulse laser waveform. By using the photoconductive switches, an novel lab model of ultra-wide band(UWB) radar is also developed. The experim... 详细信息

关键词： Picosecond optical electronics photoconductive switch Photoconductor Ultra-wide-band radar

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photoconductive Effect of Liquid and Utilization of Solar Energy

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Open Journal of Physical Chemistry 2014年第1期4卷 15-20页

作者： Ziwei Chen Shihao Chen Institute of Theoretical Physics Northeast Normal University Changchun China The Key Laboratory of Electromagnetic Radiation and Detection Technology Institute of Electronics Chinese Academy of Sciences Beijing China

Experiments described in this paper show that there is the photoconductive effect of liquid, i.e. when light shines into a sort of alkali, acid or salt solution, the conductivity of the solution will increase. The mechanism of the effect is explained as follows. When hydrated ions in the solution absorb photons with their high enough energies, they will decompose to naked ions and water-molecules. The naked ions can reach an anode or a cathode more easily and faster than the hydrated ions;It is possible that when a molecule in the solution absorbs a photon with its high enough energy, it will decompose to negative and positive ions. Based on the effect, a device producing hydrogen by the solar-energy had been devised.

关键词： photoconductive Effect Solar Energy Hydrated Ions Conductivity of Solutions Hydrogen

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Cavity-based photoconductive sources for real-time terahertz imaging

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Photonics Research 2020年第6期8卷 858-863页

作者： J.HAWECKER V.PISTORE A.MINASYAN K.MAUSSANG J.PALOMO I.SAGNES J.-M.MANCEAU R.COLOMBELLI J.TIGNON J.MANGENEY AND S.S.DHILLON Laboratoire de Physique de I'Ecole normale superieure ENSUniversite PSLCNRSSorbonne UniversiteUniversite de ParisF-75005 ParisFrance i2S 28-30 rue Jean Perrin 33608 PessacFrance Centre de Nanosciences et de Nanotechnologies(C2N) CNRS UMR 9001Universite Paris-Saclay91120 PalaiseauFrance Institut d'Electronique et des Systemes CNRS(UMR 5214)Univ Montpellier860 rue de Saint-Priest34095 Montpellier Cedex 5France

Optically driven photoconductive switches are one of the predominant sources currently used in terahertz im-aging ***,owing to their low average powers,only raster-based images can be taken,resulting in slow *** this work,we show that by placing a photoconductive switch within a cavity,we are able to generate absolute average THz powers of 181μW with the frequency of the THz emission centered at 1.5 THz-specifications ideally adapted to applications such as non-destructive *** cavity is based on a metal-insulator-metal structure that permits an en hancement of the average power by almost 1 order of magnitude compared to a standard structure,while conserving a broadband spectral *** demonstrate proof-of-principle real-time imaging using this source,with the broadband spectrum permitting to eliminate strong diffraction artifacts.

关键词： photoconductive sources cavity

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Fabrication and Characteristics of Fast Photo Response ZnO/Porous Silicon UV photoconductive Detector

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Advances in Materials Physics and Chemistry 2011年第3期1卷 70-77页

作者： Hanan A. Thjeel Abdulla. M. Suhail Asama N. Naji Qahtan G. Al-zaidi Ghaida S. Muhammed Faten A. Naum 不详

Fast response time UV photoconductive detector was fabricated based on ZnO film prepared by thermal chemical spray pyrolysis technique. The ZnO nanofilms are grown on the porous silicon (PS) nanosurface which has drastically reduced the response time of the ZnO UV detector from few seconds to few hundreds of microseconds. The surface functionalization of the ZnO film deposited on porous silicon (PS) layer by polyamide nylon has highly improved the photoresponsivity of the detector to 0.8 A/W. The normalized de-tectivity (D*) of the fabricated ZnO UV detector at wavelength of 385 nm is found to be about 2.12 × 1011 cm Hz1/2 W–1. The ZnO film grown on the porous silicon layer was oriented in the c-axis and it is found to be a p-type semiconductor, which is referred to the compensation of the excess charge carriers in the ZnO film by the nanospikes silicon layer.

关键词： Porous Silicon P-ZnO/PSi Junction Nanostructure Materials photoconductive Detectors Recombination and Trapping

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On a Predictive Scheme of Slow photoconductive Gain Evolution in Epitaxial Layer/Substrate Optoelectronic Nanodevices

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Open Journal of Microphysics 2011年第2期1卷 32-34页

作者： G. E. Zardas C. J. Aidinis E. A. Anagnostakis Ch. I. Symeonides 不详

The photoconductive response of the fundamental type of diodic nanodevice comprising a low resistivity, n-type epitaxial layer and a semi-insulating substrate is considered in terms of the optoelectronic parameter of photoconductive gain as experimentally measurable through monitoring the temporal evolution of conductivity current photoenhancement under continuous epilayer illumination-exposure. A modelling taking into account the built-in potential barrier of the interface of the epitaxial layer/substrate device (ESD) as well as its modification by the photovoltage induced within the illuminated ESD diode leads to predicting the technologically exploitable possibility of a notably slow photonic dose-evolution (exposure time-development) of the optonanoelectronics ESD photoconductive gain.

关键词： Optoelectronic Nanodevices photoconductive Gain

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Investigation of Semi-Insulating Gallium Arsenide photoconductive Photodetectors

Investigation of Semi-Insulating Gallium Arsenide Photocondu...

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2008 International Conference on Optical Instruments and Technology

作者： Xinmei WANG,Wei SHI~*,Lei HOU,Deming MA,Guanghui QU Applied Physics Department,Xi’an University of Technology,Xi’an 710048,China

The structure and working mechanism of a photoconductive photodetector are compared with a p-i-n(PIN)photodiode and a metal-semiconductor-metal(MSM)photodetector which is regarded as two back-to-back Schottky barrier *** a photoconductive photodetector has the features of high critical field strength,especially no junction capacitance and no dead zone,it has the main merits of high signal-noise ratio,ultrafast response and high quantum *** fabricate two photoconductive photodetectors in a lateral configuration on a semi-insulating(SI) gallium arsenide(GaAs)wafer,which wavelength range of response is from UV to 1.73μm due to two-photon *** is shown by the volt-ampere characteristics curve that the dark leakage current of 30-μm-gap SI GaAs photoconductive photodetector at a bias field of 66 V/cm is less than 1.2μ*** experiment has demonstrated that SI GaAs photoconductive photodetectors are noteworthily superior to high-speed Si PIN photodetectors to measure ultrashort pulse lasers with the properties of ultrafast response,ultrawide spectral range,high signal-noise ratio and ease of fabrication.

关键词： photodetector photoconductive gallium arsenide

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