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Light response and adsorption interaction of black phosphorus quantum dots and single‑layer graphene phototransistor

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Frontiers of Optoelectronics 2023年第2期16卷 15-23页

作者： Qi Han Yadong Jiang Xianchao Liu Chaoyi Zhang Jun Wang School of Optoelectronic Science and Engineering University of Electronic Science and Technology of ChinaChengdu 610054China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China

Black phosphorus quantum dots(BPQDs)are synthesized and combined with graphene sheet.The fabricated BPQDs/graphene devices are capable of detecting visible and near infrared radiation.The adsorption efect of BPQDs in graphene is clarifed by the relationship of the photocurrent and the shift of the Dirac point with diferent substrate.The Dirac point moves toward a neutral point under illumination with both SiO_(2)/Si and Si(3)N_(4)/Si substrates,indicating an anti-doped feature of photo-excitation.To our knowledge,this provides the frst observation of photoresist induced photocurrent in such systems.Without the infuence of the photoresist the device can respond to infrared light up to 980 nm wavelength in vacuum in a cryostat,in which the photocurrent is positive and Photoconduction efect is believed to dominate the photocurrent.Finally,the adsorption efect is modeled using a frst-principle method to give a picture of charge transfer and orbital contribution in the interaction of phosphorus atoms and single-layer graphene.

关键词： Black phosphorus quantum dots Dirac point Photoconduction Adsoprtion

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Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric

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Science China(Information Sciences) 2024年第6期67卷 180-189页

作者： Ali IMRAN Xin HE Jiwei LIU Qinghai ZHU Muhammad SULAMAN Fei XUE Mingsheng XU Deren YANG College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University ZJU-Hangzhou Global Scientific and Technological Innovation Centre School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems School of PhysicsBeijing Institute of Technology

The demand for photodetectors and image sensors has grown exponentially in the past decade in biomedical, security surveillance, robotics, automotive, quality control, image recognition, and military applications, due to their superior quality, broadband detection, lower noise, and economic viability. Here,we report a MoS2channel-based phototransistor over an HfO2/n-Si substrate isolated by an h BN layer. The high photoresponse is achieved through the integration of the Photoconduction, photogating, and mobility enhancement process by utilizing excellent features of MoS2, HfO2/Si, and h BN. The capacitive coupling of the photogenerated carriers by high-k dielectric HfO2leads to modulation of MoS2Fermi level due to electrostatic doping. Furthermore, the MoS2also contributes to the photogeneration of carriers due to its semiconducting nature, leading to additional photocurrent. Ultimately, the combination of photogating,Photoconduction, and swift carrier extraction with remarkable mobility of 11.65 cm2· V-1· s-1results in high responsivity, external quantum efficiency, and detectivity of 4.5 × 108A · W-1, 0.72 × 106, and 6.20× 1016Jones at 266 nm illumination, respectively. The device also demonstrates broadband photoresponse from 266–1000 nm wavelengths. The high responsivity distinguishes the potential of our device for the future of optoelectronics and broadband image sensing applications.

关键词： photogating Photoconduction two-dimensional materials high k dielectric carrier scattering phototransistor

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Recent advances of covalent organic frameworks in electronic and optical applications

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Chinese Chemical Letters 2016年第8期27卷 1383-1394,1470页

作者： Li Ma Shan Wang Xiao Feng Bo Wang Key Laboratory of Cluster Science Ministry of Education of ChinaBeijing Key Laboratory of Photoelectronic/Electrophotonic Conversion MaterialsSchool of ChemistryBeijing Institute of Technology

Covalent organic frameworks（COFs） as an emerging class of porous materials have achieved remarkable progress in recent years.Their high surface area,low mass densities,highly ordered periodic structures,and ease of functionalization make COFs exhibit superior potential in gas storage and separation,optoelectronic device and catalysis.This mini review gives a brief introduction of COFs and highlights their applications in electronic and optical fields.

关键词： Covalent organic frameworks Semiconduction Photoconduction Energy storage Chemosensor

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Constructing moisture-stable hybrid perovskite-type semiconductors based on hydrogen-bond-free strategy

Constructing moisture-stable hybrid perovskite-type semicond...

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中国化学会第十届全国无机化学学术会议

作者： Ruo-Yu Zhao Rang-Dong Xu Guang-Ning Liu School of Chemistry and Chemical Engineering University of Jinan

Hybrid perovskites-type light absorbers, notably based on methylammonium or formamidinium, have promising application in optoelectronics;however they are notorious for their characteristic low moisture stabilities and monotonous band gaps. Constructing new stability-enhanced hybrid lead iodine perovskites（HLIPs） with desired band gaps is imperative, but still a critical challenge. Herein, we demonstrate two effective strategies, which provide new ways to solve the above two issues. The "hydrogen-bond-free" strategy is aimed to enhance the stability of HLIPs by prohibiting organic components from forming strong hydrogen bonds with external water molecules. The "dual-iodine" strategy is towards the synthesis of stable HLIPs with reduced band gaps, which indicates that the I-coordinated metal complex can strongly reconstruct both the bottom of conduction bands（CBs） and the top of valence bands（VBs） of inorganic lead iodines skeleton to reduce the band gaps. As a proof-of-concept application, ambient-stable HLIPs（1,1’-diethyl-[2,2’-bipyridine]-1,1’-diium）Pb3 I8（denoted as EtBpy-Pb3 I8） and [Cu（2,2’-bipyridine）2 I]2 Pb2 I6（denoted as CuIBpy-Pb2 I6） are synthesized, which can endure relative humidity（RH） of 100% and sunlight irradiation at least 60 days. Both EtBpy-Pb3 I8 and CuIBpy-Pb2 I6 show good Photoconduction behavior with short rise and decay recovery time, and exhibit excellent repeatabilities of photocurrent. This work not only provides two new promising stability-enhanced lead-based semiconductors for light absorption application, but also opens the new ways to enhance the stabilities and tune the band gaps of HLIPs.

关键词： Perovskite Lead iodine Inorganic–organic hybrids Photoconduction Crystal structure

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Charge carrier photogeneration in conjugated polymer PhPPV/R6G composite system

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Science Bulletin 2005年第18期 25-28页

作者： WANG Huan & TIAN Wenjing Key Laboratory for Supramolecular Structure and Materials of Ministry of Education, Jilin University, Changchun 130023, China

The spectral and polarity dependence of the quantum yield of charge carrier photo-generation was stud-ied by steady-state photocurrent measurement in a single layer PhPPV film, double layer film of PhPPV and R6G and doped film of PhPPV with R6G. The intrinsic and extrinsic charge carrier photogeneration was observed. The result indicates that the quantum efficiency of the double layer device is higher than that of single layer device under reverse bias, but it is opposite under forward bias. The yield of charge carrier photogeneration of the doped film is higher than that of the other two films at both forward and reverse bias because of the increased interface area between the electron donor and acceptor.

关键词： conjugated polymer Photoconduction charge carrier photogeneration quantum efficiency.

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