We create a GaN photocathode based on graded AlxGa1-xN buffer layers to overcome the influence of buffer-emission layer interface on the photoemission of transmission-mode GaN photocathodes. A gate- shaped spectral re...
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We create a GaN photocathode based on graded AlxGa1-xN buffer layers to overcome the influence of buffer-emission layer interface on the photoemission of transmission-mode GaN photocathodes. A gate- shaped spectral response with a 260-nm starting wavelength and a 375-nm cut-off wavelength is obtained. Average quantum efficiency is 15% and short wavelength responses are almost equivalent to long wavelength ones. The fitted interface recombination velocity is 5×10^4 cm/s, with negligible magnitude, proving that the design of the graded buffer layers is efficient in obtaining good interface quality between the buffer and the emission laver.
Organic semiconductors are promising candidates as photoactive layers for photoelectrodes used in photoelectrochemical(PEC)cells due to their excellent light absorption and efficient charge transport properties with t...
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Organic semiconductors are promising candidates as photoactive layers for photoelectrodes used in photoelectrochemical(PEC)cells due to their excellent light absorption and efficient charge transport properties with the help of interfacial ***,the use of multilayers will make the charge transfer mechanism more complicated and decrease the PEC performance of the photoelectrode caused by the increased contact *** this work,a PM6:Y6 bulk heterojunction(BHJ)-based photocathode is fabricated for efficient PEC hydrogen evolution reaction(HER)in an acidic aqueous *** RuO_(2)as an interfacial modification layer,the photocathode with a simple structure(fluorine-doped tin oxide(FTO)/PM6:Y6/RuO_(2))generates a maximum photocurrent density up to-15 m A/cm^(2)at 0 V *** hydrogen electrode(RHE),outperforming all previously reported BHJ-based photocathodes in terms of PEC *** highest ratiometric power-saved efficiency of 3.7%is achieved at 0.4 V ***.
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