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Influence of etching current density on the morphology of macroporous silicon arrays by photo-electrochemical etching

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Journal of Semiconductors 2010年第7期31卷 57-60页

作者：王国政陈立秦旭磊王蓟王洋付申成端木庆铎 School of Science Changchun University of Science and Technology

Macroporous silicon arrays（MSA） have attracted much attention for their potential applications in photonic crystals,silicon microchannel plates,MEMS devices and so *** order to fabricate perfect MSA structure,photo-electrochemical （PEC） etching of MSA and the influence of etching current on the pore morphology were studied in *** current-voltage curve of a polished n-type silicon wafer was presented in aqueous HF using back-side *** critical current density J_（PS） was discussed and the basic condition of etching current density for steady MSA growth was *** indirect method was presented to measure the relation of J_（PS） at the pore tip and etching *** growth was realized with the pore diameter constant by changing the etching current density according to the measuring result of J_（PS）.MSA with 295μm of depth and 98 of aspect ratio was obtained.

关键词： current density macroporous silicon arrays photo-electrochemical etching initial pits

Formation of a silicon micropore array of a two-dimension electron multiplier by photo electrochemical etching

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Journal of Semiconductors 2009年第2期30卷 13-16页

作者：高延军端木庆铎王国政李野田景全 Changchun University of Science and Technology Jilin University

A semiconductor PEC etching method is applied to fabricate the n-type silicon deep micropore channel array. In this method, it is important to arrange the direction of the micropore array along the crystal orientation of the Si substrate. Otherwise, serious lateral erosion will happen. The etching process is also relative to the light intensity and HF concentration. 5% HF concentration and 10-15 cm distance between the light source and the silicon wafer are demonstrated to be the best in our experiments. The n-type silicon deep micropore channel array with aperture of 3/2m and aspect ratio of 40-60, whose inner walls are smooth, is finally obtained.

关键词： photo-electrochemical etching MCP electron multiplier micropore deep-channel n-type silicon

Hierarchical Porous Patterns of n-type 6H-SiC Crystals via photoelectrochemical etching

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Journal of Materials Science & Technology 2013年第7期29卷 655-661页

作者： Lihuan Wang Huihui Shao Xiaobo Hu Xiangang Xu State Key Laboratory of Crystal Materials Shandong University

Hierarchical porous patterns have been fabricated on the C face, Si face, and cross section of n-type 6H-SiC crystal via photo-electrochemical etching using HF/C2H5OH and HF/H2O2 as electrolytes. The porous layer displayed multiple and multiscale microstructures on different faces, including stalactite-like, sponge-like and dendritic porous structures on C face, echinoid micro-patterns on Si face, and columnar and keel-shaped micro-patterns on the cross section. The formation of hierarchical porous pattern is ascribed to the dynamic competition balance between the electrochemical oxidation rate and the oxide removal rate. It was found that increasing the ionic strength of the electrolyte can obviously disturb the surface morphology of the porous SiC during the photo-electrochemical etching. Possible mechanisms for selective etching were further discussed.

关键词： SiC photo-electrochemical etching Porous patterning