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Low-Temperature Formation of a WO<sub>3</sub>Thin Film by the Sol-Gel Method Using photo-irradiation and Fabrication of a Flexible Hydrogen Sensor

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Materials Sciences and Applications 2020年第2期11卷 135-149页

作者： Tomoji Ohishi Kenta Ueguri Keigo Nakamura Department of Applied Chemistry Faculty of Engineering Shibaura Institute of Technology Toyosu Koto-ku Tokyo Japan

Hydrogen has been recently attracted much attention with respect to high energy-conversion efficiency and low environmental burden. However, hydrogen gas is dangerous due to an explosive gas and a fast combustion rate. Therefore, the development of hydrogen sensor with high accuracy and reliability that can detect hydrogen easily is required. Especially, a flexible hydrogen sensor is useful because it has a high degree of freedom with respect to the shape of location in which the sensor is to be located. A flexible hydrogen sensor—namely, a WO3 thin film formed on a PET film by the sol-gel method using photo irradiation—based on gasochromism of WO3 was developed. By irradiating a thin film, which was prepared by using WO3 precursor solution synthesized by the sol-gel method, with ultraviolet rays, a high-purity WO3 film could be prepared on PET at low temperature. The sensor was structured as a polystyrene (PS) film containing palladium (Pd) laminated on a WO3 film. The WO3 layer was porous, so the PS containing Pd atoms solution penetrated the WO3 layer. WO3 reacted with hydrogen gas and instantly turned blue as the transmittance of the WO3 layer changed. The sensor showed high reactivity even for hydrogen concentration below 4% (1%, 0.5%, 0.25%, and 0.1%), which was the lower limit of hydrogen ignition, and a linear relationship between hydrogen concentration and change in transmittance was found. Moreover, the resistance of the WO3 film significantly and instantaneously changed due to hydrogen-gas exposure, and the hydrogen concentration and resistance change showed a linear relationship. It is therefore possible to quantitatively detect low concentrations of hydrogen by using changes in transmittance and resistance as indices. Since these changes occur selectively under hydrogen at room temperature and normal pressure, they form the basis of a highly sensitive hydrogen sensor. Since the developed sensor is flexible, it has a high degree of freedom with respect t

关键词： Tungsten Oxide Sol-Gel Method photo-irradiation PET Film Flexible Hydrogen Sensor

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Formation and Gas Barrier Characteristics of Polysilazane-Derived Silica Coatings Formed by Excimer Light irradiation on PET Films with Vacuum Evaporated Silica Coatings

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Materials Sciences and Applications 2017年第1期8卷 1-14页

作者： Tomoji Ohishi Yoshimi Yamazaki Department of Applied Chemistry Faculty of Engineering Shibaura Institute of Technology Koto-ku Tokyo Japan

The effects of excimer light irradiation on polysilazane coatings formed on PET films with vacuum-evaporated SiO2 coatings and the effects of these coatings on gas barrier characteristics have been investigated. The temperature during light irradiation has a large effect on the coating’s molecular structure and gas barrier characteristics. When irradiation was performed at 100℃, the polysilazane coating transformed into a silica coating, and a compact silica coating at a much lower temperature than with heat treatment alone was produced. Surface irregularities in the vapor-deposited silica coating were smoothed out by the formation of a polysilazane coating, which was transformed into a compact silica coating when irradiated with light, resulting in a significant improvement in the gas barrier characteristics. The water vapor permeability of the thin coating irradiated with excimer light at 100℃ showed only 0.04 g/m2•day (40℃, 90% RH). According to the results of investigation of temperature variation of water-vapor permeability, it is inferred that the developed film has an excellent gas barrier value, namely, 4.90 × 10–4 g/m2•day at 25℃. This gas barrier coated PET film is transparent and flexible, and can be used in the fabrication of flexible electronics. Also, the proposed fabrication method effectively provides a simple low-cost and low-temperature fabrication technique without the need for high vacuum facility.

关键词： Polysilazane photo-irradiation Excimer Light Gas Barrier Characteristics PET Film Flexible Electronics

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Preparation and Gas Barrier Characteristics of Polysilazane-Derived Silica Thin Films Using Ultraviolet irradiation

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Materials Sciences and Applications 2014年第3期5卷 105-111页

作者： T. Ohishi S. Sone K. Yanagida Department of Applied Chemistry Faculty of Engineering Shibaura Institute of Technology Tokyo Japan

The gas barrier film formation technique using simultaneous photo-irradiation and heat-treatment has been researched on alicyclic polyimide film coated with a polysilazane solution. A fine SiO2 thin film on polyimide film was formed at low temperatures, which greatly improved the substrate’s gas barrier characteristics by this technique. The values of gas barrier characteristics depended on the substrate temperature at the time of photo-irradiation. For photo-irradiated thin film heat-treated to 150°C, the water vapor transmission rate and oxygen transmission rate fell below the equipment measurement limit of 0.02 g/m2/day and 0.02 cm3/m2/day, respectively. This polyimide film with a gas-barrier film coating has good transmittance in the region of visible light, heat resistance, and flexibility.

关键词： Polysilazane photo-irradiation Gas Barrier Characteristics Alicyclic Polyimide Film

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Heat-Resistant Properties of a SiO<sub>2</sub>-Coated PET Film Prepared by Irradiating a Polysilazane-Coated Film with Excimer Light

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Materials Sciences and Applications 2020年第1期11卷 58-69页

作者： Tomoji Ohishi Kousei Ichikawa Satoki Isono Department of Applied Chemistry Faculty of Engineering Shibaura Institute of Technology Toyosu Koto-ku Tokyo Japan

Flexible electronics have been recently paid much attention. A flexible substrate (Organic resin film) is indispensable component for flexible devices. Though PET film is low-cost organic film, low heat-resistance of PET film limits its application as a flexible device substrate. We have developed heat-resistant PET which does not deteriorate even at 190°C heat treatment for one hour. An excimer light was irradiated onto a polysi-lazane (PHPS: perhydropolysilane)-coated film to form a dense silicon-dioxide (SiO2) layer on a PET film, and the heat-resistance property of the formed film was examined. Changes of surface state and cross-sectional structure of the formed film due to heat treatment were investigated by scanning electron microscope (SEM) and transmission electron microscope (TEM). Compared to normal PET, which is deteriorated and whitened by heat treatment of about 110°C - 120°C, the SiO2-coated PET film maintains transparency and does not deteriorate after heat treatment at 180°C - 190°C for one hour. This high heat resistance is due to a dense SiO2 film formed on the surface that prevents surface precipitation and crystallization of low-molecular-weight oligomers (which are the cause of thermal degradation of PET). It is expected that enhancing the heat resistance of PET—which has high versatility and low cost—to about 180°C to 190°C will allow SiO2-film-coated PET to be developed as a film substrate for flexible devices.

关键词： Polysilazane Dense Silica Thin Film photo-irradiation Excimer Light Heat Resistance PET Film Flexible Electronics

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