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A snake addressing scheme for phase change memory testing

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Science China(Information Sciences) 2016年第10期59卷 222-232页

作者： Xiaole CUI Zuolin CHENG Chunglen LEE Xinnan LIN Yiqun WEI Xiaogang CHEN Zhitang SONG Key Laboratory of Integrated Microsystems Peking University Shenzhen Graduate School State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-System and Information Technology Chinese Academy of Sciences

phase change memory(PCM) is one of the most promising candidates for next generation nonvolatile memory. However, PCM suffers from a variety of faults due to its special device structure and operation mechanism. A snake addressing scheme is introduced into the test algorithms of PCM to reduce the test time and excite proximity disturb faults more effectively. The March test algorithm with the proposed snake addressing scheme is less complex than most traditional test algorithms. In addition to conventional faults, it is capable of covering disturb and parasitic faults. Moreover, when incorporated with the sneak path testing method, it is able to test the read fault, read recovery fault, incomplete program fault 0, and false write fault.

关键词： phase change memory fault model snake addressing mode March test algorithm sneak path test method

A Survey of phase change memory Systems

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Journal of Computer Science & Technology 2015年第1期30卷 121-144页

作者：夏飞蒋德钧熊劲孙凝晖 State Key Laboratory of Computer Architecture Institute of Computing Technology Chinese Academy of Sciences Beijing 100190 China University of Chinese Academy of Sciences Beijing 100049 China

As the scaling of applications increases, the demand of main memory capacity increases in order to serve large working set. It is difficult for DRAM （dynamic random access memory） based memory system to satisfy the memory capacity requirement due to its limited scalability and high energy consumption. Compared to DRAM, PCM （phase change memory） has better scalability, lower energy leakage, and non-volatility. PCM memory systems have become a hot topic of academic and industrial research. However, PCM technology has the following three drawbacks： long write latency, limited write endurance, and high write energy, which raises challenges to its adoption in practice. This paper surveys architectural research work to optimize PCM memory systems. First, this paper introduces the background of PCM. Then, it surveys research efforts on PCM memory systems in performance optimization, lifetime improving, and energy saving in detail, respectively. This paper also compares and summarizes these techniques from multiple dimensions. Finally, it concludes these optimization techniques and discusses possible research directions of PCM memory systems in future.

关键词： phase change memory memory system performance lifetime energy

Exploiting write power asymmetry to improve phase change memory system performance

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Frontiers of Computer Science 2015年第4期9卷 566-575页

作者： Qi WANG Donghui WANG Chaohuan HOU Institute of Acoustics Chinese Academy of Sciences Beijing 100190 China School of Physics University of Chinese Academy of Sciences Beijing 100049 China

phase change memory （PCM） is a promising can- didate to replace DRAM as main memory, thanks to its bet- ter scalability and lower static power than DRAM. However, PCM also presents a few drawbacks, such as long write la- tency and high write power. Moreover, the write commands parallelism of PCM is restricted by instantaneous power con- straints, which degrades write bandwidth and overall perfor- mance. The write power of PCM is asymmetric： writing a zero consumes more power than writing a one. In this paper, we propose a new scheduling policy, write power asymme- try scheduling （WPAS）, that exploits the asymmetry of write power. WPAS improves write commands parallelism of PCM memory without violating power constraint. The evaluation results show that WPAS can improve performance by up to 35.5%, and 18.5% on average. The effective read latency can be reduced by up to 33.0%, and 17.1% on average.

关键词： phase change memory write power asymmetry,command scheduling

Threshold switching uniformity in In_2Se_3 nanowire-based phase change memory

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Chinese Physics B 2015年第5期24卷 567-571页

作者：陈键杜刚刘晓彦 Shenzhen Graduate School Peking University Institute of Microelectronics Peking University

The uniformity of threshold voltage and threshold current in the In2 Se3 nanowire-based phase change memory （PCM） devices is investigated. Based on the trap-limited transport model, amorphous layer thickness, trap density, and trap depth are considered to clarify their influences upon the threshold voltage and threshold current through simulations.

关键词： phase change memory nanowire trap-limited model threshold voltage

A review of compact modeling for phase change memory

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Journal of Semiconductors 2022年第2期43卷 74-87页

作者： Feilong Ding Baokang Peng Xi Li Lining Zhang Runsheng Wang Zhitang Song Ru Huang School of Electronic and Computer Engineering Peking UniversityShenzhen 518055China Shanghai Institute of Micro-System and Information Technology Chinese Academy of SciencesShanghai 200050China Institute of Microelectronics Peking UniversityBeijing 100871China

phase change memory(PCM)attracts wide attention for the memory-centric computing and neuromorphic *** circuit and system designs,PCM compact models are mandatory and their status are reviewed in this *** mod-els and physics-based models have been proposed in different stages of the PCM technology *** model-ing of PCM is indeed more complex than the transistor modeling due to their multi-physics nature including electrical,thermal and phase transition dynamics as well as their *** of the PCM operations including threshold switching,set and reset programming in these models are diverse,which also differs from the perspective of circuit *** the purpose of efficient and reliable designs of the PCM technology,open issues and challenges of the compact modeling are also discussed.

关键词： phase change memory compact model macro model physics-based model

Crystallization kinetics of Sn_(40)Se_(60) thin films for phase change memory applications

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Journal of Semiconductors 2015年第6期36卷 17-20页

作者： Joshua M.Kundu Patrick M.Karimi Walter K.Njoroge Department of Physics Kenyatta University

The crystallization kinetics of Sn4oSe6o thin films has been successfully investigated using sheet resis- tance versus temperature measurements. Thermal evaporation was used to deposit the films on ordinary glass sub- strates. The crystallization temperature for Sn4oSe60 thin film was found to be 156.6 -t- 0.3 ~C. In the as-deposited state, the sheet resistance was found to be 195 Mf2/[2, this value declined to 1560 f2/[2] upon annealing. The value of activation energy obtained from the Kissinger plot was 0.62 ＋ 0.07 eV. From the results obtained, SnaoSe60 is a promising alloy for PCM application because of its high electrical contrast, high crystallization temperature, and relatively high activation energy.

关键词： crystallization temperature activation energy electrical contrast phase change memory

Thermal effect of Ge_2Sb_2Te_5 in phase change memory device

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Chinese Physics B 2014年第8期23卷 121-124页

作者：李俊焘刘波宋志棠任堃朱敏徐佳任佳栋冯高明任万春童浩 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences University of the Chinese Academy of Sciences Semiconductor Manufacturing International Corporation

In the fabrication of phase change random access memory （PRAM） devices, high temperature thermal processes are inevitable. We investigate the thermal stability of GezSb2Te5 （GST） which is a prototypical phase change material. After high temperature process, voids of phase change material exist at the interface between Ge2Sb2Te5 and substrate in the initial open memory cell. This lower region of GezSb2Te5 is found to be a Te-rich phase change layer. phase change memory devices are fabricated in different process conditions and examined by scanning electron microscopy and energy dispersive X-ray. It is found that hot-chuck process, nitrogen-doping process, and lower temperature inter-metal dielectric （IMD） deposition process can ease the thermal impact of line-GST PRAM cell.

关键词： phase change memory Ge2Sb2Te5 thermal effect failure analysis

Endurance characteristics of phase change memory cells

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Journal of Semiconductors 2016年第5期37卷 65-68页

作者：霍如如蔡道林陈邦明陈一峰王玉婵王月青魏宏阳王青夏洋洋高丹宋志棠 Shanghai Institute of Micro-System and Information Technology Shanghai 200050 China Shanghai Tech University Shanghai 200031 China

The endurance characteristics of phase change memory are studied. With operational cycles, the resis- tances of reset and set states gradually change to the opposite direction. What is more, the operational conditions that are needed are also discussed. The thilure and the changes are concerned with the compositional change of the phase change material. An abnormal phenomenon that the threshold voltage decreases slightly at first and then increases is observed, which is due to the coaction of interthce contact and growing active volume size changing.

关键词： phase change memory endurance, compositional change threshold voltage

The“gene”of reversible phase transformation of phase change materials:Octahedral motif

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Nano Research 2022年第2期15卷 765-772页

作者： Zhitang Song Ruobing Wang Yuan Xue Sannian Song State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-System and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Nonvolatile phase change random access memory(PCRAM)is regarded as one of promising candidates for next-generation memory in the era of Big *** phase transition mechanism of phase change materials is the key scientific issue to be addressed for phase change ***,obtaining homogeneous phase change materials with high speed,low power consumption,long life and good thermal stability is still the ultimate challenge for high-density three-dimensional(3D)*** this paper,starting from the octahedral structure motifs(octahedrons)which are considered as the"gene"of phase change materials,a new view on the phase transition mechanism is *** on this mechanism,a homogeneous phase change material is developed by constructing three matched octahedrons,which achieved an overall improvement in performance,showing 180℃ten-year data retention,6 ns SET speed,one order of magnitude longer life time and 75%reduced power consumption compared with traditional Ge_(2)Sb_(2)Te_(5)(GST)*** is of great significance to use it in 3D PCRAM chip and multi-level brain-inspired computing chip in the future.

关键词： phase change memory phase transition mechanism octahedral atomic motifs matching high density