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Microfluidic generation of barcodes with in situ synthesized perovskite quantum dot encapsulation

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Science China Chemistry 2021年第9期64卷 1540-1546页

作者： Feika Bian Lingyu Sun Yu Wang Dagan Zhang Zhiyang Li Yuanjin Zhao Department of Clinical Laboratory Institute of Translational MedicineThe Affiliated Drum Tower Hospital of Nanjing University Medical SchoolNanjing210008China State Key Laboratory of Bioelectronics School of Biological Science and Medical EngineeringSoutheast UniversityNanjing210096China

perovskite quantum dots(PQDs)are new class of optoelectronic materials,which have been widely studied for their extraordinary physical properties.Attempts to develop these materials are tending to make their fabrication much controllable and extend their values in different areas.Here,we present a novel strategy for one-step in situ synthesis of PQD-encapsulated barcode particles with the assistance of microfluidic technique.By changing the halide ratio in perovskite precursor solutions that emulsified in microfluidic devices,a series of PQDs with different colors have been successfully fabricated,which made them ideal materials as barcodes.Because of the stable encapsulation of ethyleneglycol dimethacrylate(EGDMA)resin,the PQD-encapsulated barcode particles were with no cytotoxicity and could be anti-quenched.It was demonstrated for the first time that the PQD-encapsutated barcode particles by microfluidics were valuable for multiplex biomolecular encoding and assays.These features indicate that the PQD-encapsutated barcode particles by microfluidics are ideal for many practical applications and have a broad prospect in biomedical field.

关键词： microfluidics droplet perovskite quantum dot barcode Janus

Efficient red perovskite quantum dot light-emitting diode fabricated by inkjet printing

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Materials Futures 2022年第1期1卷 135-141页

作者： Danyang Li Junjie Wang Miaozi Li Biao Guo Lan Mu Yu Luo Yi Xiao Chaohuang Mai Jian Wang Junbiao Peng Institute of Polymer Optoelectronic Materials and Devices State Key Laboratory of Luminescent Materials and DevicesSouth China University of TechnologyGuangzhou 510640People’s Republic of China

perovskite quantum dots(PeQDs)are considered potential display materials due to their high color purity,high photoluminescence quantum yield(PLQY),low cost and easy film casting.In this work,a novel electroluminescence(EL)device consisting of the interface layer of long alkyl-based oleylammonium bromide(OAmBr),which passivates the surface defects of PeQDs and adjusts the carrier transport properties,was designed.The PLQY of the OAmBr/PeQD bilayer was significantly improved.A high-performance EL device with the structure of indium tin oxide/poly(3,4-ethylenedioxythiophene)polystyrene sulfonate/poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine)/OAmBr/PeQDs/2,2′,2′′-(1,3,5-benzinetriyl)-tris(1-phenyl-1H benzimidazole)/LiF/Al was constructed using a spin-coating method.A peak external quantum efficiency(EQE)of 16.5%at the emission wavelength of 646 nm was obtained.Furthermore,an efficient matrix EL device was fabricated using an inkjet printing method.A high-quality PeQD matrix film was obtained by introducing small amounts of polybutene into the PeQDs to improve the printing process.The EQE reached 9.6%for the matrix device with 120 pixels per inch and the same device structure as that of the spin-coating one.

关键词： perovskite quantum dot light-emitting diode inkjet print

Highly spectra-stable pure blue perovskite light-emitting diodes based on copper and potassium co-doped quantum dots

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Nano Research 2023年第5期16卷 7654-7660页

作者： Fang Chen Wenjie Ming Yongfei Li Yun Gao Lea Pasquale Kexin Yao Boyuan Huang Qiuting Cai Guochao Lu Jizhong Song Mirko Prato Xingliang Dai Haiping He Zhizhen Ye School of Materials Science and Engineering State Key Laboratory of Silicon MaterialsZhejiang UniversityHangzhou 310027China Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials Institute of WenzhouZhejiang UniversityWenzhou 325006China Wenzhou XINXINTAIJING Tech.Co.Ltd. Wenzhou 325006China Shanxi‐Zheda Institute of Advanced Materials and Chemical Engineering Taiyuan 030000China Department of Materials Science and Engineering Southern University of Science and TechnologyShenzhen 518055China Multi-scale Porous Materials Center Institute of Advanced Interdisciplinary Studies&School of Chemistry and Chemical EngineeringChongqing UniversityChongqing 400044China Materials Characterization Facility Istituto Italiano di TecnologiaGenova 16163Italy School of Physics and Microelectronics Zhengzhou UniversityZhengzhou 450052China

Halide perovskite light emitting diodes(LEDs)have gained great progress in recent years.However,mixed-halide perovskites for blue LEDs usually suffer from electroluminescence(EL)spectra shift at a high applied voltage or current density,limiting their efficiency.In this work,we report a strategy of using single-layer perovskite quantum dots(QDs)film to tackle the electroluminescence spectra shift in pure-blue perovskite LEDs and improve the LED efficiency by co-doping copper and potassium in the mixed-halide perovskite QDs.As a result,we obtained pure-blue halide perovskite QD-LEDs with stable EL spectra centred at 469 nm even at a current density of 1,617 mA·cm^(−2).The optimal device presents a maximum external quantum efficiency(EQE)of 2.0%.The average maximum EQE and luminance of the LEDs are 1.49%and 393 cd·m^(−2),increasing 62%and 66%compared with the control LEDs.Our study provides an effective strategy for achieving spectra-stable and highly efficient pure-blue perovskite LEDs.

关键词： light-emitting diode blue LED perovskite quantum dot stable electroluminescence spectra metal doping

Ligand exchange engineering of FAPbI_(3) perovskite quantum dots for solar cells

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Frontiers of Optoelectronics 2022年第3期15卷 139-150页

作者： Wentao Fan Qiyuan Gao Xinyi Mei Donglin Jia Jingxuan Chen Junming Qiu Qisen Zhou Xiaoliang Zhang School of Materials Science and Engineering Beihang UniversityBeijing 100191China

Formamidinium lead triiodide(FAPbI_(3))perovskite quantum dots(PQDs)show great advantages in photovoltaic applications due to their ideal bandgap energy,high stability and solution processability.The anti-solvent used for the post-treatment of FAPbI_(3) PQD solid flms signifcantly afects the surface chemistry of the PQDs,and thus the vacancies caused by surface ligand removal inhibit the optoelectronic properties and stability of PQDs.Here,we study the efects of diferent anti-solvents with diferent polarities on FAPbI_(3) PQDs and select a series of organic molecules for surface passivation of PQDs.The results show that methyl acetate could efectively remove surface ligands from the PQD surface without destroying its crystal structure during the post-treatment.The benzamidine hydrochloride(PhFACl)applied as short ligands of PQDs during the post-treatment could fll the A-site and X-site vacancies of PQDs and thus improve the electronic coupling of PQDs.Finally,the PhFACl-based PQD solar cell(PQDSC)achieves a power conversion efciency of 6.4%,compared to that of 4.63%for the conventional PQDSC.This work provides a reference for insights into the surface passivation of PQDs and the improvement in device performance of PQDSCs.

关键词： FAPbI_(3) perovskite quantum dot Antisolvent Surface passivation Solar cell

Nanocomposites of CsPbBr_(3) perovskite quantum dots embedded in Gd_(2)O_(3):Eu^(3+) hollow spheres for LEDs application

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Journal of Rare Earths 2022年第10期40卷 1509-1518页

作者： Gang Wang Shangjun Yu Bin Liu Zongming Liu Jinkai Li School of Materials Science and Engineering University of JinanJjinan 250022China

Gd_(2)O_(3):Eu^(3+)@CsPbBr_(3) quantum dots(QDs)mesoporous hollow nanocomposites with good luminescent properties and high stability were built.Among which,the hollow Gd_(2)O_(3):Eu^(3+)spheres and CsPbBr_(3) QDs were prepared by urea homogeneous precipitation and hot-injection method,respectively.Finally,the Gd_(2)O_(3):Eu^(3+)@CsPbBr_(3) QDs shell-core compounds were constructed through mechanical stirring.The structure,morphology,stability and luminescent properties were studied by Fourier transform infrared spectroscopy(FT-IR),differential scanning calorimetry/thermogravity(DSC/TG),X-ray diffraction(XRD),field-emission scanning electron microscopy(FE-SEM),transmission electron microscopy(TEM),photoluminescence excitation/photoluminescence(PLE/PL)and life decay tools.Compared to the original CsPbBr_(3) QDs,Gd_(2)O_(3):Eu^(3+)@CsPbBr_(3) QDs display better photostability,thermal stability and current stability.The resulting Gd_(2)O_(3):Eu^(3+)@CsPbBr_(3) QDs composite exhibits good yellow emission.The Gd_(2)O_(3):Eu^(3+)@CsPbBr_(3) QDs mixed silicone resin was directly coated on the blue LED chip,then the w-LED device with the color coordinate of(0.31,0.32)was successfully assembled.The Gd_(2) O_(3):Eu^(3+)@CsPbBr_(3) QDs compounds with excellent luminescent properties and stability are expected to be widely used in lighting and display areas.

关键词： Rare earth oxides Hollow mesoporous Stability perovskite quantum dot Light-emitting diode

Flexible multi-level quasi-volatile memory based on organic vertical transistor

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Nano Research 2022年第1期15卷 386-394页

作者： Huihuang Yang Qian Yang Lihua He Xiaomin Wu Changsong Gao Xianghong Zhang Liuting Shan Huipeng Chen Tailiang Guo Institute of Optoelectronic Display National&Local United Engineering Lab of Flat Panel Display TechnologyFuzhou UniversityFuzhou 350002China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350100China Zhicheng College Fuzhou UniversityFuzhou 350002China

Driven by important megatrends such as cloud computing,artificial intelligence,and the Internet of Things,as a device used to store programs and data in computing systems,memory is struggling to catch up with the explosive growth of data and bandwidth requirements in the system.However,the storage wair between non-volatile memory and volatile memory retards the further improvement of modern memory computing systems.Herein,a quasi-volatile transistor memory based on organic polymer/perovskite quantum dot blend was fabricated using the vertical transistor configuration.Contributing to vertical structure and appropriate doping ratio of blend film,the quasi-volatile memory device displayed 1,560 times longer data retention time(>100 s)with respect to the dynamic random access memory and fast data programming speed(20 ps)in which was far more quickly than that of other organic non-volatile memories to fill the gap between volatile and non-volatile memories.Moreover,the device retention characteristics could be further promoted under the photoelectric synergistic stimulation,which also provided the possibility to reduce electric writing condition.Furthermore,the quasi-volatile memory device showed good electrical performance under bending conditions.This work provides a simple solution to fabricate multi-level quasi-volatile memory,which opens up a whole new avenue of"universal memory"and lays a solid foundation for low power and flexible random access memory devices.

关键词： vertical transistor organic transistor memory perovskite quantum dot quasi-volatile memory storage wall