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Long-term stability of transparent n/p ZnO homojunctions grown by rf-sputtering at room-temperature

Journal of Materiomics 2019年第3期5卷 428-435页

作者： V.Kampylafka A.Kostopoulos M.Modreanu M.Schmidt E.Gagaoudakis K.Tsagaraki V.Kontomitrou G.Konstantinidis G.Deligeorgis G.Kiriakidis E.Aperathitis Microelectronics Research Group Institute of Electronic Structure and LaserFoundation for Research and TechnologydFORTH-HellasP.O.Box 1385Heraklion70013CreteGreece Tyndall National Institute-University College Cork Lee MaltingsDyke ParadeCorkIreland Physics Department University of CreteP.O.Box 220871003HeraklionCreteGreece Transparent Conductive Materials&Devices Group Institute of Electronic Structure&LaserFoundation for Research and Technology FORTH-HellasP.O.Box 1385Heraklion70013CreteGreece

ZnO-based n/p homojunctions were fabricated by sputtering from a single zinc nitride target at room temperature on metal or ITO-coated glass and Si substrates.A multi-target rf-sputtering system was used for the growth of all oxide films as multilayers in a single growth run without breaking the vacuum in the growth *** nitrogen-containing films(less than 1.5 at.% of nitrogen)were n-type ZnO when deposited in oxygen-deficient Ar plasma(10%O_(2))and p-type ZnO when deposited in oxygen-rich Ar plasma(50%O_(2)).The all-oxide homojunction ITO/n-ZnO/p-ZnO/ITO/glass was fabricated in a single deposition run and exhibited visible transparency in the range of 75-85%.The n/p ZnO homojunctions,having metallic contacts,formed on conventionally processed substrates showed a fairly unstable behavior concerning the current-voltage ***,the same homojunctions formed on Si_(3)N_(4)-patterned substrates and stored in atmosphere for a period of five months were stable exhibiting a turn-on voltage of around 1.5 *** realization of a room temperature sputtered transparent and stable ZnO homojunction paves the way to the realization of all-oxide transparent optoelectronic devices.

关键词： ZnO homojunction p-type ZnO Single step sputtering Stability patterned substrate

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Advance in the Growth of Ordered Ge/Si Quantum Dots

Advance in the Growth of Ordered Ge/Si Quantum Dots

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2012 China Functional Materials Technology and Industry Forum

作者： Hai-peng Wang Chong Wang Jie Yu Jie Yang Yu Yang Institute of Optoelectronic Information Materials Yunnan University

Recent progress in the growth of ordered Ge/Si quantum dots(QDs) is *** focus on the detailed progresses of the Ge/Si multiple layers QDs and the preparation of Ge/Si QDs by ion beam *** addition,the growth of Ge/Si QDs on patterned substrate by using different preparation methods are also well discussed,such as nanosphere lithography technology, extreme ultra-violet interference lithography technology,nanoimprint lithography technology,etc.

关键词： Ordering Ge/Si quantum dots Multiple layers Ion beam irradiation patterned substrate

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