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Polypropylene Glycol-Modified Anode Interface for High-Performance Perovskite Solar Cells

Chinese Journal of Chemistry 2022年第22期40卷 2694-2700页

作者： Fei Wu Kangrong Yan Haotian Wu Yuanhang Guo Shiqi Shan Tianyi Chen Weifei Fu Lijian Zuo Hongzheng Chen State Key Laboratory of Silicon Materials MOE Key Laboratory of Macromolecular Synthesis and FunctionalizationDepartment of Polymer Scienceand EngineeringZhejiang UniversityHangzhouZhejiang310027China Zhejiang University-Hangzhou Global Scientific and Technological Innovation Center HangzhouZhejiang 310014China

The surface properties and chemical interactions are critical for perovskite solar cells(PVSCs).In this work,we show that the polypropylene glycol(PPG)can simultaneously passivate the NiOx surface and grain boundaries of perovskite films,allowing more efficient charge transfer at the anode interface and reducing the recombination of PVSCs.As a result,the open-circuit voltage(Voc)of MAPbI3 based inverted PVSCs increases from 1.087 V to 1.127 V,and the short-circuit current density(Jsc)is increased from 20.87 mA·cm^(–2) to 22.32 mA·cm^(–2),thereby realizing the improvement of the device power conversion efficiency(PCE)from 18.34%to 20.12%.Moreover,the steady-state output of the PVSCs is remarkably improved by incorporating PPG.Further analysis of surface properties suggests that part of the PPG at the interface can permeate into the precursor solution with the help of DMF solvent and remain in the perovskite layer to form a concentration gradient.The ether bond of PPG and the uncoordinated Pb2+in the perovskite are coordinated to achieve passivation effects and improve device performance.

关键词： Nanoparticles Polymers Interfaces passivation effects Inverted perovskitesolarcells

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Hydrogen roles approaching ideal electrical and optical properties for undoped and Al doped ZnO thin films

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Journal of Materiomics 2022年第1期8卷 123-135页

作者： Dung Van Hoang Nam Hoang Vu Nga Thi Do Anh Tuan Thanh Pham Truong Huu Nguyen Jer-Lai Kuo Thang Bach Phan Vinh Cao Tran Laboratory of Advanced Materials University of ScienceHoChiMinh City700000Viet Nam Vietnam National University HoChiMinh City700000Viet Nam HoChiMinh City Institute of Physics HoChiMinh City700000Viet Nam Institute of Atomic and Molecular Sciences Academia SinicaTaipei10617Taiwan Center for Innovative Materials and Architectures(INOMAR) HoChiMinh City700000Viet Nam Faculty of Materials Science&Technology University of ScienceHoChiMinh City700000Viet Nam

This paper distinguished hydrogen roles to improve electron mobility and carrier concentration in ZnO and Al doped ZnO sputtered films.By combining experimental evidences and theoretical results,we find out that hydrogen located at oxygen vacancy sites(H_(O))is the main factor gives rise to increase simultaneously mobility and carrier concentration which has not been mentioned before.Introducing appropriate hydrogen content during sputtering not only results in crystalline relaxation but also supports doping Al into ZnO,increasing carrier concentration and electron mobility in the film.First principles calculations confirmed hydrogen substitutional stability for oxygen vacancy,significantly reducing electron conductivity effective mass and hence increasing electron mobility.In particular,0.8%hydrogen partial pressure ratio achieved 61 cm^(2)V^(-1)s^(-1)maximum electron mobility,optical transmittance above 82%in visible and near-infrared regions,and 2×10^(20) cm^(-3)carrier concentrations for H-Al co-doped ZnO film.These values approach ideal electrical and optical properties for transparent conducting oxide films.The presence of one maximum electron mobility was attributed to competition between increasing mobility due to restoring effective electron mass and hydrogen passivation of native defects,and decreased electron mobility due to electron-phonon scattering.

关键词： High electron mobility Hydrogen roles passivation effects Effective electron mass DFT calculations Doped ZnO thin Film

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