Based on Al induced crystallization (AIC) method, influences of different material structures on formation and characteristics of ploy-silicon thin films were studied and optimized. Al-si films on glass with different...
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Based on Al induced crystallization (AIC) method, influences of different material structures on formation and characteristics of ploy-silicon thin films were studied and optimized. Al-si films on glass with different structures (si/Al/Glass, Al/si/Glass, si/Al/.../si/Al/Glass) were deposited on glass substrates by sputtering method. All samples were annealed for MIC with varied time processes under 500°C N2 environment. X-ray diffraction test and scanning electron microscope were adopted to characterize crystallization performance and surface topography of AIC poly-silicon samples after removing residual aluminum. The electrical properties were also characterized by Hall test method. Quick process and high performance of AIC ploy-silicon thin film can be both obtained by use of periodic structure samples.
This paper investigates a simplified metal induced crystallization (MIC) of a-si, named solution-based MIC (SMIC). The nickel inducing source was formed on a-si from salt solution dissolved in de-ionized water or ...
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This paper investigates a simplified metal induced crystallization (MIC) of a-si, named solution-based MIC (SMIC). The nickel inducing source was formed on a-si from salt solution dissolved in de-ionized water or ethanol, a-si thin film was deposited with low pressure chemical vapour deposition or plasma enhanced chemical vapour deposition as precursor material for MIC. It finds that the content of nickel source formed on a-si can be controlled by solution concentration and dipping time. The dependence of crystallization rate of a-si on annealing time illustrated that the linear density of nickel source was another critical factor that affects the crystallization of a-si, besides the diffusion of nickel disilicide. The highest electron Hall mobility of thus prepared S-MIC poly-si is 45.6 cm^2/(V· s). By using this S-MIC poly-si, thin film transistors and display scan drivers were made, and their characteristics are presented.
An isotropic etching technique of texturing silicon solar cells has been applied to polycrystalline silicon wafers with different acid concentrations. Optimal e tching conditions have been determined by etching rate c...
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An isotropic etching technique of texturing silicon solar cells has been applied to polycrystalline silicon wafers with different acid concentrations. Optimal e tching conditions have been determined by etching rate calculation, scanning ele ctron microscope (SEM) image and reflectance measurement. The surface morphology of the textured wafers varies in accordance with the different etchant concentr ation which in turn leads to the dissimilarity of etching speed. Textured polycr ystalline silicon wafer surfaces display randomly located etched pits which can reduce the surface reflection and enhance the light absorption. The special rela tionship between reflectivity and etching rate was studied. Reflectance measurem ents show that isotropic texturing is one of the suitable techniques for texturi ng polycrystalline silicon wafers and benefits solar cells performances.
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