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Optimization of material structure of ploy-si thin film based on Al induced crystallization

Science China(Technological Sciences) 2009年第8期52卷 2186-2189页

作者： ZeWen Wang Bing Xiong LiChong Zhang Yi Luo Tsinghua National Laboratory for Information Science and Technology and State Key Laboratory on Integrated Optoelectronics Department of Electronic Engineering Tsinghua University Beijing 100084 China

Based on Al induced crystallization (AIC) method, influences of different material structures on formation and characteristics of ploy-silicon thin films were studied and optimized. Al-si films on glass with different structures (si/Al/Glass, Al/si/Glass, si/Al/.../si/Al/Glass) were deposited on glass substrates by sputtering method. All samples were annealed for MIC with varied time processes under 500°C N2 environment. X-ray diffraction test and scanning electron microscope were adopted to characterize crystallization performance and surface topography of AIC poly-silicon samples after removing residual aluminum. The electrical properties were also characterized by Hall test method. Quick process and high performance of AIC ploy-silicon thin film can be both obtained by use of periodic structure samples.

关键词： Al induced crystallization poly-si thin film material structure sputtering periodic structure

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Solution-based metal induced crystallization of a-si

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Chinese Physics B 2009年第3期18卷 1237-1241页

作者：吴春亚李学冬赵淑云李娟孟志国熊绍珍张芳 Institute of Photo-Electronics Nankai University The Tianjin Key Laboratory for Photo-electronic Thin Film Devices and Technology Key Laboratory of Opto-electronic Information Science and Technology(Nankai University and Tianjin University) the Ministry of Education National High Technology Research and Development Center the Ministry of Science and Technology

This paper investigates a simplified metal induced crystallization （MIC） of a-si, named solution-based MIC （SMIC）. The nickel inducing source was formed on a-si from salt solution dissolved in de-ionized water or ethanol, a-si thin film was deposited with low pressure chemical vapour deposition or plasma enhanced chemical vapour deposition as precursor material for MIC. It finds that the content of nickel source formed on a-si can be controlled by solution concentration and dipping time. The dependence of crystallization rate of a-si on annealing time illustrated that the linear density of nickel source was another critical factor that affects the crystallization of a-si, besides the diffusion of nickel disilicide. The highest electron Hall mobility of thus prepared S-MIC poly-si is 45.6 cm^2/（V· s）. By using this S-MIC poly-si, thin film transistors and display scan drivers were made, and their characteristics are presented.

关键词： Ni-salt source metal induced crystallization (MIC) poly-si TFT

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ISOTROPIC TEXTURING OF polyCRYSTALLINE siLICON WAFERS

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Acta Metallurgica sinica(English Letters) 2005年第3期18卷 269-274页

作者： L.Wang H.Shen YF.Hu GuangzhouInstituteofEnergyConversion TheChineseAcademyofSciencesGuangzhou510640China GuangzhouInstituteofEnergyConversion TheChineseAcademyotSciencesGuangzhou510640China／／TheSchoolofPhysicsandEngineeringZhongshanUniversityGuangzhou510275China CollegeofMechanicalEngineering SouthChinaUniversityofTechnologyGuangzhou510640China

An isotropic etching technique of texturing silicon solar cells has been applied to polycrystalline silicon wafers with different acid concentrations. Optimal e tching conditions have been determined by etching rate calculation, scanning ele ctron microscope (SEM) image and reflectance measurement. The surface morphology of the textured wafers varies in accordance with the different etchant concentr ation which in turn leads to the dissimilarity of etching speed. Textured polycr ystalline silicon wafer surfaces display randomly located etched pits which can reduce the surface reflection and enhance the light absorption. The special rela tionship between reflectivity and etching rate was studied. Reflectance measurem ents show that isotropic texturing is one of the suitable techniques for texturi ng polycrystalline silicon wafers and benefits solar cells performances.

关键词： texturing light trapping poly-si reflectance

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