检索结果-南通市图书馆

poly-si Thin Film Grown by Excimer Laser Crystallization and Its Ellipsometric Analysis

在线全文

学校读者我要写书评

暂无评论

Semiconductor Photonics and Technology 2000年第2期6卷 96-99,104页

作者： ZENGXiang－bin XUZhong－yang 等 Dept.ofElectr.Sci.andTechn. HuazhongUniversityofSci.andTechn.Wuhan430074CHN Dept.ofElectr.Sci.andTe

A novel approach of two-step laser crystallization for the growth of poly-si thin film on glass substrate is investigated. Using this approach, we fabricated poly-si thin film transistors with electron mobility of 103 cm2/V·s and on/off current ratio of 1×10~*** are better than those of the poly-si TFTs fabricated by conventional single-step excimer laser crystallization. We also analyzed the structure of the laser crystallized poly-si thin film by spectroscopic ellipsometry, and proposed the models to simulate the poly-si thin film and calculated the ellipsometric spectra. The calculated results are in good agreement with the measured results.

关键词： poly-si Thin film Laser crystallization Thin film transistors

Formation of poly-si Films on Glass Substrates by Using Microwave Plasma Heating and Fabrication of TFT’s on the Films

在线全文

学校读者我要写书评

暂无评论

Journal of Materials Science and Chemical Engineering 2018年第1期6卷 19-24页

作者： Hiroki Nakaie Tetsuji Arai Keisuke Arimoto Junji Yamanaka Kiyokazu Nakagawa Kazuki Kamimura Toshiyuki Takamatsu Interdisciplinary Graduate School of Medicine and Engineering University of Yamanashi Kofu Japan SST Inc. Yachiyo Japan

We have developed an apparatus for producing high-density hydrogen plasma. The atomic hydrogen density was 3.0 × 1021 m?3 at a pressure of 30 Pa, a microwave power of 1000 W, and a hydrogen gas flow rate of 5 sccm. We confirmed that the temperatures of tungsten films increased to above 1000?C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of tungsten films deposited on amorphous silicon films on glass substrates and formed polycrystalline silicon films. To utilize this method, we can perform the crystalline process only on device regions. TFTs were fabricated on the polycrystalline silicon films and the electron mobilities of 60 cm2/Vs were obtained.

关键词： Microwave Plasma Heating poly-si Thin Film Transistor

poly-si TFT有源驱动OLED像素电路的参数设计与仿真

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Poly-Si TFT有源驱动OLED像素电路的参数设计与仿真

作者：夏志强吉林大学

学位级别：硕士

本论文的主要工作是结合目前实验室中现有的OLED制作技术和设备水平以及韩国PT-PLUS公司的LDD型poly-si TFT制备工艺,确定了全P沟道poly-si TFT AMOLED像素驱动电路的参数,对电路的功能进行了仿真,并对电路参数进行了优化。具体工作是... 详细信息

本论文的主要工作是结合目前实验室中现有的OLED制作技术和设备水平以及韩国PT-PLUS公司的LDD型poly-si TFT制备工艺,确定了全P沟道poly-si TFT AMOLED像素驱动电路的参数,对电路的功能进行了仿真,并对电路参数进行了优化。具体工作是结合特定poly-si TFT的制备工艺,根据相关的设计规则及OLED的工作条件,确定了两管TFT像素驱动电路和电流镜像素驱动电路的参数。在利用STAR-HSPICE对电路仿真之前,对Level 62 RPI poly-si TFT模型的结构和原理进行了分析,详细设置了模型参数。根据96×3×128的像素矩阵和60HZ刷新率的工作条件,设置了驱动信号和电源电压,然后对两类像素驱动电路进行了仿真。模拟了各元件参数对电路性能的影响、寄生效应对电路性能的影响,阈值电压变化带来的问题等。对电流镜像素驱动电路进行了改进,优化了器件参数,得到了满意的结果。

关键词： poly-si TFT AMOLED 像素驱动电路

同方学位论文库评论

在线全文

同方学位论文库

学校读者我要写书评

暂无评论

poly-si TFT理论模型的研究

液晶与显示 1998年第2期13卷 92-97页

作者：张建军吴春亚孙钟林南开大学光电子所国家教委光学信息技术科学开放研究实验室

建立了一个ｐｏｌｙ－ＳｉＴＦＴ的物理模型，并在此基础上分析了ｐｏｌｙ－Ｓｉ材料特性对ｐｏｌｙ－ＳｉＴＦＴ器件特性的影响。该模型考虑了晶粒和晶粒间界的不同特性，对泊松方程做了两维模型一维处理，用热电子发射模型重新定义了... 详细信息

建立了一个ｐｏｌｙ－ＳｉＴＦＴ的物理模型，并在此基础上分析了ｐｏｌｙ－Ｓｉ材料特性对ｐｏｌｙ－ＳｉＴＦＴ器件特性的影响。该模型考虑了晶粒和晶粒间界的不同特性，对泊松方程做了两维模型一维处理，用热电子发射模型重新定义了有效迁移率，推导出了ｐｏｌｙ－ＳｉＴＦＴ电流电压关系的解析式。

关键词： poly-si TFT 物理模型晶界势垒有效迁移率 poly-si薄膜 CMOS电路液晶电视

Novel fabrication techniques for ultra-thin silicon based flexible electronics

在线全文

学校读者我要写书评

暂无评论

INTERNATIONAL JOURNAL OF EXTREME MANUFACTURING 2024年第4期6卷 116-149页

作者： Lee, Ju Young Ju, Jeong Eun Lee, Chanwoo Won, Sang Min Yu, Ki Jun Yonsei Univ Sch Elect & Elect Engn 50 Yonsei RoSeodaemungu Seoul 03722 South Korea Yonsei Univ Korea Inst Sci & Technol KIST Inst 50Yonsei RoSeodaemun Gu Seoul 03722 South Korea Sungkyunkwan Univ Dept Elect & Comp Engn Suwon 16419 South Korea

Flexible electronics offer a multitude of advantages, such as flexibility, lightweight property, portability, and high durability. These unique properties allow for seamless applications to curved and soft surfaces, leading to extensive utilization across a wide range of fields in consumer electronics. These applications, for example, span integrated circuits, solar cells, batteries, wearable devices, bio-implants, soft robotics, and biomimetic applications. Recently, flexible electronic devices have been developed using a variety of materials such as organic, carbon-based, and inorganic semiconducting materials. silicon (si) owing to its mature fabrication process, excellent electrical, optical, thermal properties, and cost efficiency, remains a compelling material choice for flexible electronics. Consequently, the research on ultra-thin si in the context of flexible electronics is studied rigorously nowadays. The thinning of si is crucially important for flexible electronics as it reduces its bending stiffness and the resultant bending strain, thereby enhancing flexibility while preserving its exceptional properties. This review provides a comprehensive overview of the recent efforts in the fabrication techniques for forming ultra-thin si using top-down and bottom-up approaches and explores their utilization in flexible electronics and their applications. Flexible silicon manufacturing techniques are categorized into two main approaches: top-down and bottom-up depending on the process sequence. The top-down approach is a method of producing the bulk silicon wafer by scaling down it into nano/micro-sized structures. The bottom-up approach is a method of creating an intricate structure through precise control of small-scale atoms and molecules. Flexible silicon maintains the advantages of the bulk silicon such as electrical properties, reliability, and cost-effectiveness.

关键词： flexible electronics silicon fabrication technique top-down approach bottom-up approach siNGLE-CRYSTAL siLICON METAL-INDUCED CRYSTALLIZATION SOLID-PHASE CRYSTALLIZATION PEROVSKITE SOLAR-CELLS AMORPHOUS-siLICON FILM TRANsiSTORS LOW-TEMPERATURE polyCRYSTALLINE siLICON DOPANT DIFFUsiON poly-si

Effect of Ar on polycrystalline si Films Deposited by ECR-PECVD using siH_4

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Materials Science & Technology 2008年第5期24卷 690-692页

作者： Hua CHENG Aimin WU Nanlin SHI Lishi WEN Institute of Metal Research Chinese Academy of Sciences Shenyang 110016 China Dalian University of Technology Dalian 116024 China Armor Technique Institute of PLA Changchun 130117 China

In this paper, polycrystalline silicon films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition （ECR-PECVD） using siH4/Ar and siH4/H2 gaseous mixture. Effects of argon flow rate on the deposition efficiency and the film property were investigated by comparing with H2. The results indicated that the deposition rate of using Ar as discharge gas was 1.5-2 times higher than that of using H2, while the preferred orientations and the grain sizes of the films were analogous. Film crystallinity increased with the increase of Ar flow rate. Optimized flow ratio of siH4 to Ar was obtained as F（siH4）： F（Ar）=10：70 for the highest deposition rate.

关键词： Ar flow rate ECR-PECVD poly-si Thin Films

Degradation mechanisms for polycrystalline silicon thin-film transistors with a grain boundary in the channel under negative gate bias stress

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2022年第12期31卷 599-604页

作者： Dongli Zhang Mingxiang Wang Huaisheng Wang School of Electronic and Information Engineering Soochow UniversitySuzhou 215006China

The negative gate bias stress(NBS)reliability of n-type polycrystalline silicon(poly-si)thin-film transistors(TFTs)with a distinct defective grain boundary(GB)in the channel is *** show that conventional NBS degradation with negative shift of the transfer curves is *** on-state current is decreased,but the subthreshold characteristics are not *** gate bias dependence of the drain leakage current at V_(ds)of 5.0 V is suppressed,whereas the drain leakage current at V_(ds)of 0.1 V exhibits obvious gate bias *** confirmed via TCAD simulation,the corresponding mechanisms are proposed to be trap state generation in the GB region,positive-charge local formation in the gate oxide near the source and drain,and trap state introduction in the gate oxide.

关键词： negative bias stress poly-si thin-film transistor grain boundary

Crystallization of amorphous silicon beyond the crystallized polycrystalline silicon region induced by metal nickel

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2017年第1期26卷 353-356页

作者： Dongli Zhang Mingxiang Wang Man Wong Hoi-sing Kwok Department of Microelectronics Soochow University Suzhou 215006 China Center for Display Research Department of Electronic and Computer Engineering the Hong Kong University of Science and Technology Kowloon Hong Kong China

Crystallization of amorphous silicon（a-si） which starts from the middle of the a-si region separating two adjacent metal-induced crystallization（MIC） polycrystalline silicon（poly-si） regions is observed. The crystallization is found to be related to the distance between the neighboring nickel-introducing MIC windows. Trace nickel that diffuses from the MIC window into the a-si matrix during the MIC heat-treatment is experimentally discovered, which is responsible for the crystallization of the a-si beyond the MIC front. A minimum diffusion coefficient of 1.84×10^-9cm^2/s at 550℃ is estimated for the trace nickel diffusion in a-si.

关键词： metal-induced crystallization poly-si nickel diffusion coefficient

The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2013年第10期22卷 370-374页

作者：李娟罗翀孟志国熊绍珍郭海威 Institute of Photo-Electronics Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and TechnologyNankai University Department of Electronic and Computer Engineering The Hong Kong University of Science and TechnologyClear Water Bay

The mechanism of hydrogen plasma passivation for poly-crystalline silicon （poly-si） thin films is investigated by optical emission spectroscopy （OES） combined with Hall mobility, Raman spectra, absorption coefficient spectra, and so on. It is found that different kinds of hydrogen plasma radicals are responsible for passivating different defects in polysi. The Ha with lower energy is mainly responsible for passivating the solid phase crystallization （SPC） poly-si whose crystallization precursor is deposited by plasma-enhanced chemical vapor deposition （PECVD）. The H＊ with higher energy may passivate the defects related to teh Ni impurity around the grain boundaries more effectively. In addition, Hβ and H7 with the highest energy are required to passivate intra-grain defects in the poly-si crystallized by SPC but whose precursor is deposited bv low pressure chemical vapor deposition（LPCVD）

关键词： hydrogen plasma passivation poly-si mechanism