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Chinese Optics Letters 2020年第8期18卷 81-86页

作者： Liangyi Hang Weiguo Liu Junqi Xu Shaanxi Provincial Key Laboratory of Thin Films Technology and Optical Test Xi’an Technological UniversityXi’an 710021China

The plasma-enhanced chemical vapor deposition(PECVD)technique is well suited for fabricating optical filters with continuously variable refractive index profiles;however,it is not clear how the optical and structural properties of thin films differ when deposited on different ***,silicon nitride films were deposited on silicon,fused silica,and glass substrates by PECVD,using silane and ammonia,to investigate the effects of the substrate used on the optical properties and structures of the *** of the deposited films were ***,the types and amounts of Si-centered tetrahedral Si–SivN4-v bonds formed were based upon the substrates used;Si–N4 bonds with higher elemental nitrogen content were formed on Si substrates,which lead to obtaining higher refractive indices,and the Si–SiN3 bonds were mainly formed on glass and fused silica *** refractive indices of the films formed on the different substrates had a maximum difference of0.05(at 550 nm),the refractive index of SiNx films formed on silicon substrates was 1.83,and the refractive indices of films formed on glass were very close to those formed on fused *** deposition rates of these SiNx films are similar,and the extinction coefficients of all the films were lower than 10-4.

关键词： thin films plasma-enhanced chemical vapor deposition optical properties structural properties substrate materials

Effects of Pretreatment on the Electronic Properties of plasma enhanced chemical vapor deposition Hetero-Epitaxial Graphene Devices

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Chinese Physics Letters 2014年第9期31卷 137-140页

作者：张连昌史志文杨蓉黄鉴 Department of Physics Kunming University Kunming 650214 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of Sciences Beijing 100190

Quasi-monolayer graphene is successfully grown by the plasma enhanced chemical vapor deposition hetero- epitaxial method we reported previously. To measure its electrical properties, the prepared graphene is fabricated into Hall ball shaped devices by the routine micro-fabrication method. However, impurity molecules adsorbed onto the graphene surface will impose considerable doping effects on the one-atom-thick film materiM. Our ex- periment demonstrates that pretreatment of the device by heat radiation baking and electricM annealing can dramatically influence the doping state of the graphene and consequently modify the electricM properties. While graphene in the as-fabricated device is highly p-doped, as confirmed by the position of the Dirae point at far more than ＋60 V, baking treatment at temperatures around 180~C can significantly lower the doping level and reduce the conductivity. The following electricM annealing is much more efficient to desorb the extrinsic molecules, as confirmed by the in situ measurement, and as a result, further modify the doping state and electrical properties of the graphene, causing a considerable drop of the conductivity and a shifting of Dirac point from beyond 4-60 V to 0V.

关键词： chemical vapor deposition RESEARCH GRAPHENE -- Electric properties plasma-enhanced chemical vapor deposition EPITAXY MICROFABRICATION

AC plasma-enhanced chemical vapor deposition of Carbon Nitride Thin Films

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AC Plasma-enhanced Chemical Vapor Deposition of Carbon Nitri...

Effect of CO2 Addition on Preparation of Diamond Films by Direct-Current Hot-Cathode plasma chemical vapor deposition Method

The Fourth International Conference on Applied Electrostatics

作者： Li Xiaowei, Ding Xuecheng, Yu Wei, Zhang Lianshui, Fu GuangshengCollege of Physics Science and Technology, Hebei University, Baoding, 071002 China

The crystal carbon nitride thin films have been deposited on silicon substrates by AC discharge plasma-enhanced chemical vapor deposition using N, H and CH as source materials. The sample morphology, structure and chemical bonding structure are determined by mean of scanning electronic microscopy, X-ray diffraction and Raman spectroscopy. The substrate bias voltage effects have been studied. The results show that the energetic species influence the process of the gas phase collision and the surface reactions which can effectively prevent the formation of graphite phase carbon nitride and carbon silicon phase in the deposited film.

关键词： Carbon nitride Substrate bias plasma-enhanced chemical vapor deposition

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Chinese Physics Letters 2010年第8期27卷 232-234页

作者：张春梅郑艳彬姜志刚吕宪义侯雪胡双刘军伟 Department of Foundation Jilin Business and Technology College Changehun 130062 State Key Laboratory of Superhard Materials Jilin University Changehun 130012

Diamond films are deposited on Mo substrates by dc hot-cathode plasma chemical vapor deposition method using a CH4-H2-CO2 gas mixture. Adjusting the flow of CO2, we study the relevant influence on surface morphology, grain orientation and crystalline quality of films with scanning electron microscopy, x-ray diffraction, Raman spectroscopy, respectively. The results show that grain orientation of the films has a transition with the increasing CO2 addition, from （100） orientation to （110） orientation and then （111） orientation. The crystalline quality is improved but the growth rate is decreased by raising the flow of CO2. The experimental results are also discussed briefly.

关键词： CARBON dioxide ADDITION reactions DIAMONDS THIN films plasma (Ionized gases) plasma-enhanced chemical vapor deposition SURFACES (Technology) SCANNING electron microscopy

Vertical graphene-coated Cu wire for enhanced tolerance to high current density in power transmission

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Nano Research 2022年第11期15卷 9727-9733页

作者： Kun Wang Shuting Cheng Qingmei Hu Feng Yu Yi Cheng Kewen Huang Hao Yuan Jun Jiang Wenjuan Li Junliang Li Shichen Xu Jianbo Yin Yue Qi Zhongfan Liu Center for Nanochemistry(CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871China Beijing Graphene Institute(BGI) Beijing 100095China State Key Laboratory of Heavy Oil Processing College of ScienceChina University of PetroleumBeijing 102249China

Cu wires(CuWs)are widely used as electric transmission ***,their limited thermal and chemical stabilities become challenges under the high-power and harsh *** is regarded as an ideal protective barrier for CuW benefiting from its impermeability to all atoms and ***,the excellent hydrophobicity of vertical graphene(VG)will strengthen its protective capability as a corrosion and oxidation ***,VG is directly synthesized on CuW by plasmaenhanced chemical vapor deposition *** hydrophobic VG coating with a high water contact angle can effectively exclude the corrosive liquid and moisture from CuW surface and prevent their further ***,the electrochemical corrosion rate of VG-CuW is reduced by~13,8,and 2 times,compared with bare CuW,VG-CuW with hydrophilic treatment,and CuW coated with thick horizontal graphene layers,*** oxidation occurs on VGCuW after the long-time exposure to humid air at~200℃ along with the largely enhanced tolerance under high-current operating *** study reveals the impressive potentials of hydrophobic VG as a robust corrosion and oxidation barrier for metal wires used in high-power cables and electronic devices in harsh environment.

关键词： vertical graphene Cu wire oxidation and corrosion plasma-enhanced chemical vapor deposition

Field Electron Emission from Caterpillar-Like Clavae Nano-Structure Carbon Thin Films

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Chinese Physics Letters 2010年第8期27卷 222-224页

作者：王丽军朱玉传王小平章诗刘欣欣李怀辉梅翠玉刘晓菲 College of Science University of Shanghai for Science and Technology Shanghai 200093

Nano-carbon films with large density of caterpillar-like clavae are synthesized by microwave plasma-assisted chemical vapor deposition using a mixture of methane and hydrogen gases on Mo film substrates. The films are characterized by Raman spectra, optical microscopy and field emission scanning electron microscopy. Field electron emission measurements of nano-carbon films are also carried out to show the turn-on field as low as 1.5 V/μm and the high current density of 2.2mA/cm^2 at electric field of ***/μm, the uniformly distributed emission site density from a broad well-proportioned emission area of about 4.0cm^2 is also obtained. The field- emission current density J versus macroscopic electric field E does not follow the original Fowler-Nordheim （F-N） relation since they are not well represented in the F-N plot by a straight line. A modified F-N relation is applied successfully to explain all the field-emission data observed for E 〈 6.0 V/μm.

关键词： ELECTRON emission NANOSTRUCTURED materials CARBON THIN films DENSITY plasma-enhanced chemical vapor deposition RAMAN effect

Junctionless Coplanar-Gate Oxide-Based Thin-Film Transistors Gated by AluOa Proton Conducting Films on Paper Substrates

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Chinese Physics Letters 2014年第10期31卷 157-160页

作者：吴国栋张进万相 School of Electronic Science and Engineering Nanjing University Nanjing 210093 Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201

Nanogranular Al2O3 films deposited by plasma-enhanced chemical vapor deposition show a high proton conductivity of -1.25 × 10^-4 S/cm and a huge electric-double-layer （EDL） capacitance of -4.8μF/cm^2 at room temperature. Using nanogranular Al2O3 proton conducting films as gate dielectrics, junctionless indium-zincoxide （IZO） thin-film transistors （TFTs） with a coplanar-gate configuration are fabricated. The unique feature of such junctionless TFTs is that the channel and source/drain electrodes are the same thin IZO film without any source/drain junction. Due to the strong EDL capacitive coupling triggered by mobile protons in nanogranular Al2O3, these TFTs show a low-voltage operation of 1.5 V and a high performance with a large field-effect mobility （〉18cm2/V.s）, a small .subthreshold swing （〈130mV/decade） and a high current on/off ratio （〉 106）. Our results demonstrate that such junetionless TFTs gated by Al2O3 proton conducting films have great potential applications in low-power and low-cost electronics.

关键词： THIN film transistors SUBSTRATES (Materials science) PROTON conductivity plasma-enhanced chemical vapor deposition DIELECTRICS

Roll-to-roll fabrication of large-scale polyorgansiloxane thin film with high flexibility and ultra-efficient atomic oxygen resistance

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plasma Science and Technology 2022年第6期24卷 173-181页

作者： Yi LI Zhonghua LI Detian LI Yanchun HE Shengzhu CAO Hu WANG Hengjiao GAO Hanjun HU Ying HE Yuan WANG Jun ZHU Science and Technology on Vacuum Technology and Physical Laboratory Lanzhou Institute of PhysicsChina Academy of Space TechnologyLanzhou 730000People's Republic of China School/Hospital of Stomatology School/Hospital of Stomatology Lanzhou University(Dental Hospital).Key Laboratory of Dental Maxillofacial Reconstruction and Biological Intelligence Manufacturing Gansu ProvinceSchool of StomatologyLanzhou UniversityLanzhou 730000People's Republic of China State Key Laboratory of Advanced Display Technology Special Display and Imaging Technology Innovation Center of Anhui ProvinceAnhui Provincial Key Laboratory of Advanced Functional Materials and DevicesAcademy of Opto-Electric TechnologyHefei University of TechnologyHefei 230009People's Republic of China

One of the most widely used and well-established atomic oxygen(AO)protection solutions for low Earth orbit(LEO)satellites is the deposition of protective coatings on polymeric ***,manufacturing extensive expanses of these coating materials with good transparency,flexibility,smoothness,ultra-thinness,and exceptional AO resistance remains a critical ***,we successfully deposited a 400 nm thick polyorgansiloxane(SiO_(x)C_(y)H_(z))coating with high optical transparency and uniform good adherence on to a 1.2 m wide polyimide surface,by optimizing the distribution of hexamethyldisiloxane and oxygen as precursors in the roll-to-roll compatible plasmaenhanced chemical vapor deposition *** AO irradiation with the fluence of 7.9×10^(20)atoms·cm^(–2),the erosion yield of the SiO_(x)C_(y)H_(z)-coated Kapton was less than 2.30×10^(–26)cm^3·atom^(–1),which was less than 0.77%of that of the *** indicates that the SiO_(x)C_(y)H_(z)coating can well prevent the erosion of Kapton by *** addition,it was also clarified that a SiO_(2) passivation layer was formed on the surface of the SiO_(x)C_(y)H_(z)coating during AO irradiation,which exhibited a‘self-reinforcing’defense *** entire preparation process of the SiO_(x)C_(y)H_(z)coating was highly efficient and low-cost,and it has shown great potential for applications in LEO.

关键词： plasma-enhanced chemical vapor deposition hexamethyldisiloxane polyorganosiloxane thin film flexibility atomic oxygen

Preparation of H-terminated and aminated diamond like carbon surfaces

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Rare Metals 2012年第2期31卷 189-192页

作者： Wang, Mei Wang, Weichen Huang, Yujie Li, Musen Key Laboratory of Liquid Structure and Heredity of Materials Ministry of Education Shandong University Jinan. 25006l China

H-terminated DLC layers were synthesized on SiO 2 substrate by radio frequency (RF) magnetron plasma-enhanced chemical vapor deposition (PECVD) in a conventional reactor using C 4 H 10 as carbon source. As-deposited DLC films were characterized by Raman spectroscopy, scanning electron microscopy (SEM) as well as atomic force microscopy (AFM). The chemical reactivity of the obtained DLC surface was further investigated by exposing the photochemically oxidized DLC surface to a silane reagent. The course of the reaction was followed using water contact angle and X-ray photoelectron spectroscopy.

关键词： diamond like carbon plasma-enhanced chemical vapor deposition amination

Cost-effective,environmentally-sustainable and scale-up synthesis of vertically oriented graphenes from waste oil and its supercapacitor applications

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Waste Disposal and Sustainable Energy 2021年第1期3卷 31-39页

作者： Wenhao Kuang Huachao Yang Chongyan Ying Biyao Gong Jing Kong Xiangnan Cheng Zheng Bo State Key Laboratory of Clean Energy Utilization Institute for Thermal Power EngineeringCollege of Energy EngineeringZhejiang UniversityHangzhou 310027ZhejiangChina ZJU-Hangzhou Global Scientific and Technological Innovation Center Hangzhou 311200ZhejiangChina

Vertically oriented graphenes(VGs)have attracted tremendous attention in a variety of energy storage-related ***,the high cost of preparing VGs significantly hinders their practical *** we introduce the Ar-plasma-enhanced chemical vapor deposition to demonstrate the cost-effective,environmentally-sustainable,and scale-up synthesis of VGs from waste *** our system,Ar gas can improve the electron energy and ionization rate of plasma,which breaks down the chemical bonding of waste oil into essential species to etch the amorphous carbon,yielding large-area VGs(12×3.5 cm^(2))with highly-oriented structure and superior growth efficiency beyond VGs from hydrocarbon *** the supercapacitor applications,the VG-based electrode exhibits significantly enhanced capacitance(~4 times that from conventional hydrocarbon gases)and efficient AC(alternating current)filtering capability RC(resistor-capacitor)(time constant of of 163μs at 120 Hz),which is obviously superior to the non-oriented ***,MnO_(2)/VGs composite electrode is prepared to deliver a maximum energy density of~33.2 Wh/kg at 1.0 kW/kg and a power density of 10.2 kW/kg at 22.9 Wh/*** the end,the economic analysis suggests that the total cost of VGs can be reduced by~32%.This work provides an environment-friendly and low-cost avenue for preparing VGs for advanced energy storage applications.

关键词： Vertically oriented graphenes Waste oil Ar plasma plasma-enhanced chemical vapor deposition Supercapacitor