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Spectral Feature Analysis of Semiconductor Thin Disk Laser

光机电信息 2007年第12期24卷 19-25页

作者： (HE Chun-feng1, QIN Li2, LI Jun1, CHENG Li-wen1, LIANG Xue-mei1, NING Yong-qiang2, WANG Li-jun2 1. Key Laboratary of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences,Changchun 130033, China Graduate School of the Chinese Academy of Sciences, Beijing 100049, China 2. Key Laboratary of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033,China.) Key Laboratary of Excited State Processes Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of SciencesChangchun 130033 China Graduate School of the Chinese Academy of Sciences Beijing 100049 China Key Laboratary of Excited State Processes Changchun Institute of OpticsFine Mechanics and Physics Chinese Academy of Sciences Changchun 130033China

The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of the semiconductor disk laser, and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperatures. We can see that: with increasing pump power, the thermal effect of the gain material becomes seriously and causes the saturation of carrier lifetime, so the electron-hole pair created in the absorbtion layer has no enough time to rate to one of the wells, and the non-radiative recombination happens in the barrier. When the thermal effect becomes stronger, the chip will be not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer which is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs. This three QWs structure can add the quantum state of QW, increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etching equipment is also improved to control the surface unevenness to be within 50 nm.

关键词： thin disk laser heat effect pl spectrum, active region heat removal gain barrier spectral shift

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