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piezotronics in two-dimensional materials

InfoMat 2021年第9期3卷 987-1007页

作者： Qin Zhang Shanling Zuo Ping Chen Caofeng Pan Center on Nanoenergy Research Guangxi Key Laboratory for Relativistic AstrophysicsSchool of Physical Science and TechnologyGuangxi UniversityNanningChina CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-Nano Energy and SensorBeijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesBeijingChina School of Nanoscience and Technology University of Chinese Academy of SciencesBeijingChina

The fascinating two-dimensional(2D)materials are being potentially applied in various fields from science to engineering benefitting from the charming physical and chemical properties on optics,electronics,and magnetism,compared with the bulk crystal,while piezotronics is a universal and pervasive phenomenon in the materials with broking center symmetry,promoting the new field and notable achievements of piezotronics in 2D materials with higher accuracy and *** example,20 parts per billion of the detecting limitations in NO_(2)sensor,500μm of spatial strain resolution in flexible devices,and 0.363 eV output voltage in *** this review,three categories of 2D piezotronics materials are first introduced ranging from organic to inorganic data,among which six types of 2D inorganic materials are emphasized based on the geometrical arrangement of different ***,the microscopic mechanism of carrier transport and separation in 2D piezotronic materials is highlighted,accompanied with the presentation of four measured ***,the developed applications of 2D piezotronics are discussed comprehensively including different kinds of sensors,piezo-catalysis,nanogenerators and information ***,we suggest the challenges and provide the ideas for qualitative-quantitative research of microscopic mechanism and large-scale integrated applications of 2D piezotronics.

关键词： carrier transport flexible devices piezotronics two-dimensional materials

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piezotronics and piezo-phototronics: fundamentals and applications

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National Science Review 2014年第1期1卷 62-90页

作者： ZhongLin Wang Wenzhuo Wu School of Materials Science and Engineering Georgia Institute of Technology Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences

Technology advancement that can provide new solutions and enable augmented capabilities to complementary metal–oxide–semiconductor(CMOS)-based technology,such as active and adaptive interaction between machine and human/ambient,is highly *** nanodevices and integrated systems exhibit potential in achieving these application *** the gating efect of piezopotential over carrier behaviors in piezoelectric semiconductor materials under externally applied deformation,the piezoelectric and semiconducting properties together with optoelectronic excitation processes can be coupled in these materials for the investigation of novel fundamental physics and the implementation of unprecedented *** is created by the strain-induced ionic polarization in the piezoelectric semiconducting *** deal with the devices fabricated using the piezopotential as a‘gate’voltage to tune/control charge-carrier transport across the metal–semiconductor contact or the p–n ***-phototronics is to use the piezopotential for controlling the carrier generation,transport,separation and/or recombination for improving the performance of optoelectronic *** review intends to provide an overview of the rapid progress in the emerging ields of piezotronics and *** concepts and results presented in this review show promises for implementing novel nano-electromechanical devices and integrating with micro/nano-electromechanical system technology to achieve augmented functionalities to the state-of-the-art CMOS technology that may ind applications in the human–machine interfacing,active lexible/stretchable electronics,sensing,energy harvesting,biomedical diagnosis/therapy,and prosthetics.

关键词： piezotronic efect piezo-phototronic efect piezopotential piezotronics MEMS sensors

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Self-powered systems by nanogenerators and smart MEMS by piezotronics

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Engineering Sciences 2012年第5期10卷 2-7页

作者： Wang Zhong Lin School of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100085 China)

Developing wireless nanodevices and nanosystems is of critical importance for sensing, medical science, environmental/infrastructure monitoring, defense technology and even personal electronics. It is highly desirable for wireless devices to be self-powered without using battery, without which most of the sensor network may be impossible. The pie- zoelectric nanogenerators have the potential to serve as self-sufficient power sources for micro/nano systems. For wurtzite structures that have non-central symmetry, such as ZnO, GaN and InN, a piezoelectric potential （piezopotential） is created in the crystal by applying a strain. The nanogenerator is invented by using the piezopotential as the driving force for electrons to flow in respond to a dynamic straining of piezoelectric nanowires. A gentle straining can produce an output voltage of up to 20 - 50 V from an integrated nanogenerator. Furthermore, piezopotential in the wurtzite structure can serve as gate voltage that can effectively tune/control the charge transport across an interface/junction; electronics fabricated based on such a mechanism is coined as piezotronics, with applications in force/pressure triggercd/controlled electronic devices, sensors, logic units and memory. By using the piezotronic effect, it is showed that the optoelectronic devices fabricated using wurtzite materials can have superior performance as solar cell, photon detector and light emitting diode. Piezotronie is likely to serve as ＂mechanosensation＂ for directly interfacing biomechanieal action with silicon based technology and active flexible electronics. The paper gives a brief review about the basis of nanogenertors and piezotronics and their potential applications in smart MEMS （micro-electro-mechanical systems）.

关键词： slef-powered system nanogenerator piezotronics

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Piezotronic neuromorphic devices:principle,manufacture,and applications

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International Journal of Extreme Manufacturing 2024年第3期6卷 363-385页

作者： Xiangde Lin Zhenyu Feng Yao Xiong Wenwen Sun Wanchen Yao Yichen Wei Zhong Lin Wang Qijun Sun Department of Research Shanghai University of Medicine and Health Sciences Affiliated Zhoupu HospitalShanghai 201318People’s Republic of China Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of SciencesBeijing 101400People’s Republic of China Center on Nanoenergy Research School of Chemistry and Chemical EngineeringGuangxi UniversityNanning 530004People’s Republic of China Shandong Zhongke Naneng Energy Technology Co. LtdDongying 257061People’s Republic of China Georgia Institute of Technology AtlantaGA 30332-0245United States of America

With the arrival of the era of artificial intelligence(AI)and big data,the explosive growth of data has raised higher demands on computer hardware and *** techniques inspired by biological nervous systems are expected to be one of the approaches to breaking the von Neumann *** neuromorphic devices modulate electrical transport characteristics by piezopotential and directly associate external mechanical motion with electrical output signals in an active manner,with the capability to sense/store/process information of external *** this review,we have presented the piezotronic neuromorphic devices(which are classified into strain-gated piezotronic transistors and piezoelectric nanogenerator-gated field effect transistors based on device structure)and discussed their operating mechanisms and related manufacture ***,we summarized the research progress of piezotronic neuromorphic devices in recent years and provided a detailed discussion on multifunctional applications,including bionic sensing,information storage,logic computing,and electrical/optical artificial ***,in the context of future development,challenges,and perspectives,we have discussed how to modulate novel neuromorphic devices with piezotronic effects more *** is believed that the piezotronic neuromorphic devices have great potential for the next generation of interactive sensation/memory/computation to facilitate the development of the Internet of Things,AI,biomedical engineering,etc.

关键词： piezotronics neuromorphic devices strain-gated transistors piezoelectric nanogenerators synaptic transistors

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Bending Analysis of Circular Piezoelectric Semiconductor Plates Incorporating Flexoelectricity

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ACTA MECHANICA SOLIDA SINICA 2024年第4期37卷 613-621页

作者： Sun, Liang Xiao, Zhengguang Zhang, Chunli Chen, Weiqiu Zhejiang Univ Dept Engn Mech Hangzhou 310027 Peoples R China Naval Univ Engn Dept Basic Courses Wuhan 430033 Peoples R China Huanjiang Lab Zhuji 311816 Peoples R China

Based on the three-dimensional (3D) basic equations of piezoelectric semiconductors (PSs), we establish a two-dimensional (2D) deformation-polarization-carrier coupling bending model for PS structures, taking flexoelectricity into consideration. The analytical solutions to classical flexure of a clamped circular PS thin plate are derived. With the derived analytical model, we numerically investigate the distributions of electromechanical fields and the concentration of electrons in the circular PS thin plate under an upward concentrated force. The effect of flexoelectricity on the multi-field coupling responses of the circular PS plate is studied. The obtained results provide theoretical guidance for the design of novel PS devices.

关键词： Piezoelectric semiconductor Plate model Flexoelectricity Multi-field coupling CARRIER DISTRIBUTION piezotronics NANOWIRE

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Giant piezotronic effect in ferroelectric field effect transistor

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Nano Research 2024年第9期17卷 8465-8471页

作者： Haiming Zhang Mengshuang Chi Shidai Tian Tian Liang Jitao Liu Xiang Zhang Lingyu Wan Zhong Lin Wang Junyi Zhai Center on Nanoenergy Research School of Physical Science&TechnologyGuangxi UniversityNanning 530004China Beijing Key Laboratory of Micro-Nano Energy and Sensor Center for High-Entropy Energy and SystemsBeijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesBeijing 101400China School of Nanoscience and Engineering University of Chinese Academy of ScienceBeijing 100049China School of Electronic Science and Engineering University of Electronic Science and Technology of ChinaChengdu 610054China Georgia Institute of Technology AtlantaGA 30332USA

The piezotronics effect utilizes a piezopotential to modulate and control current in *** materials,as a type of piezoelectric materials,possess piezoelectric coefficients that are significantly larger than those found in conventional piezoelectric ***,we propose a strain modulated ferroelectric field-effect transistor(St-FeFET)utilizing external strain instead of gate voltage to achieve ferroelectric modulation,which eliminates the need for gate *** applying a very small strain(0.01%),the St-FeFET can achieve a maximum on-off current ratio of 1250%and realizes a gauge factor(GF)of 1.19×10^(6),which is much higher than that of conventional strain *** work proposes a new method for realizing highly sensitive strain sensors and presents innovative approaches to the operation methods of ferroelectric field-effect transistors as well as potential applications for coupling of strain sensors and various devices across different fields.

关键词： ferroelectric field-effect transistors piezotronics [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x(PMN-PT) strain sensors

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Remarkably enhanced piezo-photocatalytic performance in BaTiO_(3)/CuO heterostructures for organic pollutant degradation

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Journal of Advanced Ceramics 2022年第3期11卷 414-426页

作者： Chenye YU Mengxi TAN Chengdong TAO Yuxuan HU Chuanbao LIU Huimin MENG Yanjing SU Lijie QIAO Yang BAI Beijing Advanced Innovation Center for Materials Genome Engineering University of Science and Technology BeijingBeijing 100083China Institute for Advanced Material and Technology University of Science and Technology BeijingBeijing 100083China School of Materials Science and Engineering University of Science and Technology BeijingBeijing 100083China

Introducing polarization field of piezoelectric materials is an effective strategy to improve photocatalytic *** this study,a new type of BaTiO_(3)/CuO heterostructure catalyst was designed and synthesized to achieve high piezo-photocatalytic activity through the synergy of heterojunction and piezoelectric *** BaTiO_(3)/CuO heterostructure shows a significantly enhanced piezo-photocatalytic degradation efficiency of organic pollutants compared with the individual BaTiO_(3) nanowires(NWs)and CuO nanoparticles(NPs).Under the co-excitation of ultrasonic vibration and ultraviolet radiation,the optimal degradation reaction rate constant k of polarized BaTiO_(3)/CuO heterostructure on methyl orange(MO)dye can reach 0.05 min^(−1),which is 6.1 times of photocatalytic rate and 7 times of piezocatalytic *** BaTiO_(3)/CuO heterostructure with remarkable piezo-photocatalytic behavior provides a promising strategy for the development of high-efficiency catalysts for wastewater purification,and it also helps understand the coupling mechanism between piezoelectric effect and photocatalysis.

关键词： piezotronics photocatalysis polarization heterostructure

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Synthesis and enhanced piezoelectric response of CVD-grown SnSe layered nanosheets for flexible nanogenerators

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Nano Research 2023年第9期16卷 11839-11845页

作者： Fumei Yang Man-Chung Wong Jianfeng Mao Zehan Wu Jianhua Hao Department of Applied Physics the Hong Kong Polytechnic UniversityHong Kong 999077China

Piezoelectricity is the electric charge which accumulates in certain materials in response to mechanical stimuli,while piezoelectric nanogenerators(PENGs)converting mechanical energy into electricity can be widely used for energy harvesting and self-powered *** group IV-VI monochalcogenides may exhibit strong piezoelectricity because of their puckered C_(2v)symmetry and electronic structure,making them promising for flexible ***,we investigated the synthesis and piezoelectric properties of multilayer SnSe nanosheets grown by chemical vapor deposition(CVD).The SnSe nanosheets exhibited high single-crystallinity,large area,and good *** strong layer-dependent in-plane piezoelectric coefficient of SnSe nanosheets showed a saturated trend to be~110 pm/V,which overcomes the weak piezoelectric response or odd-even effects in other layered nanosheets.A high energy conversion efficiency of 9.3%and a maximum power density of 538 mW/cm^(2)at 1.03%strain have been demonstrated in a SnSe-based *** on the enhanced piezoelectricity of SnSe and attractive output performance of the nanogenerator,a self-powered sensor for human motion monitoring is further *** results demonstrate the strong piezoelectricity in high quality CVD-grown SnSe nanosheets,allowing for application in flexible smart piezoelectric sensors and advanced microelectromechanical devices.

关键词： SnSe piezotronics piezoresponse force microscope piezoelectric nanogenerator self-powered device

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Illumination-dependent free carrier screening effect on the performance evolution of ZnO piezotronic strain sensor

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Nano Research 2016年第4期9卷 1091-1100页

作者： Pei Lin Yousong Gu Xiaoqin Yan Shengnan Lu Zheng Zhang Yue Zhang State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering University of Science and Technology Belling Beijing 100083 China The Beijing Municipal Key Laboratory of New Energy Materials and Technologies University of Science and Technology Belling Beijing 100083 China

Performance modulation of ZnO optoelectronic devices in the presence of proper piezoelectric polarization charges has been widely reported, whereas relatively less work has been performed about the influence of photoexcitation on piezotronics. In this stud~ we experimentally investigated the performance evolution of ZnO piezotronic strain sensor under various 365 nm UV irradiation densities. The device demonstrated a response ratio of -200 under no illumination and under -0.53% compressive strain, and the response time is approximately 0.3 s. However, tremendous performance degradation was observed with the increase in the illumination densi~, which is attributed to the W-modulated change in the free electron concentration and Schottky barrier height. It was observed that increased carrier density intensifies the screening effect and thus, the modulation ability of piezo-polarization charges weakens. Meanwhile, the deterioration of rectifying behavior at the interface under UV illumination also jeopardizes the device performance.

关键词： piezotronics barrier height ultraviolet illumination surface absorption screening effect

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Mechanical Manipulation of Electrical Behaviors of Piezoelectric Semiconductor Nanofibers by Time-Dependent Stresses

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Acta Mechanica Solida Sinica 2020年第5期33卷 579-585页

作者： Haoyu Huang Zhenghua Qian Jiashi Yang State Key Laboratory of Mechanics and Control of Mechanical Structures College of Aerospace EngineeringNanjing University of Aeronautics and AstronauticsNanjing210016China Department of Mechanical and Materials Engineering University of Nebraska-LincolnLincolnNE68588-0526USA

We study electric currents in a piezoelectric semiconductor fiber under a constant voltage and time-dependent axial stresses applied *** a nonlinear numerical analysis based on a one-dimensional phenomenological model using the commercial software COMSOL,it is found that pulse electric currents can be produced by periodic or time-harmonic *** pulse currents can be tuned by the amplitude and frequency of the applied *** result obtained provides a new approach for the mechanical control of electric currents in piezoelectric semiconductor fibers and has potential applications in piezotronics.

关键词： Piezoelectric semiconductor nanofiber Tunable pulse electric current Time-dependent stress piezotronics

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